EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement

Self Cite

In DSA pattern observation of hp 5 nm and below, the pattern observation method for physical and chemical structures is necessary. Scattering measurement of hard X-rays is one method which can quantitatively evaluate the physical structure of materials. However, when many components such as polymer materials are mixed, it can observe the averaged physical structure, and it is difficult to evaluate the structure of the individual chemical components. Thus, we developed a scattering measurement method using soft X-rays near the carbon absorption edge. Since the absorption spectrum varies in the near carbon absorption edge for each polymer molecule, the individual physical structures can be observed from the scattering profile with different photon energy. In this study, both the physical and chemical structures of the triblock terpolymers such as poly [isopreneblock-styrene-block-(2-vinylpyridine)] which consists of polyisoprene, polystyrene, and poly(2-vinylpyridine) were observed. The physical structure of the triblock polymer observed two types of the packed cylinder structures such as the tetragonal and hexagonal packed structures. The film thickness of this triblock polymer was 400 nm. By varying the photon energy of the scattering measurement, the scattering light intensity changed greatly, and the signal from each polymer could be evaluated. The soft X-ray scattering measurement at the near absorption edge can be measured the molecular structure of a composite material such as a blended polymer individually and can be utilized in material development.

Section: Rsoxs Methodsmentioning

confidence: 99%

“…We have developed this method for characterizing extreme-ultraviolet (EUV) resist materials at NewSUBARU BL-10 beamline [1][2][3][4][5][6][7]. Under EUV exposure, from the absorption peak value and the chemical shift in the X-ray absorption spectra, the chemical bonding changes can be estimated at the C K region.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Block Copolymer Structure using Soft X-Ray Scattering

Nakatani

Harada

Takano

et al. 2017

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“…Since it is found that the decomposition reaction of the fluorine which consist of the onium salts employed as a PAG is significant in the previous study [15][16][17], we increase the detection sensitivity in the TEY method by refinement of the monochromator at the BL10 beamline. The W/Si aperiodic multilayer coated grating is employed for the monochromator to extend the photon energy region from 500 to 1100 eV as shown in Fig.…”

Section: Euv Resist Chemical Reaction Analysis Using X-ray Absorptionmentioning

confidence: 99%

EUVL Research Activity at Center for EUV Lithography

Watanabe

Harada

2016

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The advanced feature size patterning process of semiconductor conductor devices has been strongly charged in the information-technology oriented society. Extreme ultraviolet lithography (EUVL) is expected as a leading candidate of the next generation lithography for semiconductor electronic devices. The technology issues in EUV lithographic are the development of 1) EUV light source with high power and high stability, 2) EUV resist with simultaneous achievement of high resolution, high sensitivity, low line width roughness (LWR), and low outgassing. Center for EUVL in University of Hyogo has played an important role in the research and development of EUV lithography in two decades. Research and development of EUV lithography toward HVM was started its development just before twenty years ago to develop full field exposure tool employing tree aspherical imaging optics. In University of Hyogo developed 1) large reflectometer for the reflectivity measurement of the collector mirror for the EUV light source, 2) the EUV resist evaluation system such as the EUV interference lithography and outgassing system using in-situ ellipsometer for the evaluation of EUV resist of 10 nm and below, and X-ray absorption fine structure for EUV resist chemical reaction analysis to increase EUV exposure sensitivity, 4) the defects inspection of the actinic blanks and patterned mask. As the results, those evaluation tool could contribute EUV lithographic technology to lead to the HVM of electronic devices.

“…The sample was poly hydroxyl styreneco-tert-butylacrylate (PHS-TBA) resist with a photoacid generator of tri-phenyl sulfonium nonaflate (TPS-nonaflate), which measured in previous paper [5]. The resist film thickness of 50 nm was spin-coated on a wafer.…”

Section: Xas Measurement Of Euv Resistmentioning

confidence: 99%

“…For example, deterioration mechanism of tire rubber and engine oil were analyzed [2,3]. In addition, we analyzed the chemical reaction of the extreme ultraviolet (EUV) chemically amplified (CA) resist using BL-7 XAS system [5]. We measured XAS spectrum around the fluorine absorption energy edge of 697 eV to evaluate the decomposition reaction of photoacid generator (PAG) of CA EUV resist during EUV exposure.…”

Section: Introductionmentioning

confidence: 99%

Development of High-Reflective W/Si-multilayer Diffraction Grating for the Analysis of Fluorine Materials

Kuki

Uemura

Yamaguchi

et al. 2015

Self Cite

For the analysis of fluorine materials and 3d transition metals by soft-x-ray absorption spectroscopy, A new diffraction grating with multilayer coating was installed at the BL-10 beamline of the NewSUBARU synchrotron light source. The target photon energy range of this grating is from 500 eV to 1,000 eV, which includes absorption edges of fluorine and 3d transition metals. The beam intensity of BL-10 in this range was very low due to low reflectance of the diffraction grating for the usage of monochromator. In order to obtaining high reflectance, we developed wideband W/Si multilayer and this multilayer was coated on a new diffraction grating. The reflectance of this multilayer was approximately 13-times higher than that of previous Ni single layer at the fluorine absorption energy edge of 697 eV. The beam intensity at the energy of 697 eV using the new diffraction grating was over 40 times stronger than that using the previous Ni-coated diffraction grating. As the result, using the new diffraction grating, it can be observed that the high-quality absorption spectrum of EUV resist at the absorption edge of fluorine and standard materials of 3d transition metals. The results show that the W/Si multilayer coating significantly improved the performance of the grating at the target energy range.