Development of High-Reflective W/Si-multilayer Diffraction Grating for the Analysis of Fluorine Materials

Self Cite

In DSA pattern observation of hp 5 nm and below, the pattern observation method for physical and chemical structures is necessary. Scattering measurement of hard X-rays is one method which can quantitatively evaluate the physical structure of materials. However, when many components such as polymer materials are mixed, it can observe the averaged physical structure, and it is difficult to evaluate the structure of the individual chemical components. Thus, we developed a scattering measurement method using soft X-rays near the carbon absorption edge. Since the absorption spectrum varies in the near carbon absorption edge for each polymer molecule, the individual physical structures can be observed from the scattering profile with different photon energy. In this study, both the physical and chemical structures of the triblock terpolymers such as poly [isopreneblock-styrene-block-(2-vinylpyridine)] which consists of polyisoprene, polystyrene, and poly(2-vinylpyridine) were observed. The physical structure of the triblock polymer observed two types of the packed cylinder structures such as the tetragonal and hexagonal packed structures. The film thickness of this triblock polymer was 400 nm. By varying the photon energy of the scattering measurement, the scattering light intensity changed greatly, and the signal from each polymer could be evaluated. The soft X-ray scattering measurement at the near absorption edge can be measured the molecular structure of a composite material such as a blended polymer individually and can be utilized in material development.

Section: Rsoxs Methodsmentioning

confidence: 99%

“…We have developed this method for characterizing extreme-ultraviolet (EUV) resist materials at NewSUBARU BL-10 beamline [1][2][3][4][5][6][7]. Under EUV exposure, from the absorption peak value and the chemical shift in the X-ray absorption spectra, the chemical bonding changes can be estimated at the C K region.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Block Copolymer Structure using Soft X-Ray Scattering

Nakatani

Harada

Takano

et al. 2017

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“…In this study, the EUV mask reflectometer [17] was used for the EUV transmittance measurement, which was located in BL 10 beamline at NewSUBARU synchrotron light facility. The light source of the BL 10 beamline employed white light generated from a bending magnet.…”

Section: Transmittance Measurement Methodsmentioning

confidence: 99%

“…For the accurate measurement of the EUV absorption coefficient, the equation (1) requires accurate measurement of both the resist thickness and EUV transmittance. We have developed to measure the transmittance of EUV resist at BL 10 beamline [14][15][16] in the NewSUBARU synchrotron light facility [17] previously. In the past, we measured EUV transmittance by coating resist on a silicon-nitride freestanding membrane before and after measuring the intensity of EUV light transmitting the membrane.…”

Section: Introductionmentioning

confidence: 99%

Absorption Coefficient Measurement Advanced Method of EUV Resist by Direct-Resist Coating on a Photodiode

Niihara

Mamezaki

Watanabe

et al. 2017

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Since the resist thickness in EUV lithography of which base material mainly consists of an organic material is thin, the EUV photon energy is not be used efficiently for the EUV chemical reaction. In order to increase chemical reaction incidence in the EUV photon energy, a resist having a high-absorption material compounds for the EUV photons has been developed. It has been studied to increase the absorption including high-absorption materials such as hafnium and zinc, tin oxide, tellurium. For the development of the next-generation high sensitive resist materials, since it is significant to measure the EUV absorption coefficient accurately, it is necessary to measure the transmittance and resist thickness to obtain the absorption coefficient accurately. Thus, we have developed to evaluate the absorption coefficient of the EUV resist at BL 10 beamline of NewSUBARU synchrotron hlight facility. In the previous paper, we measured the EUV resist transmittance on a freestanding membrane. However, since it was very difficult to coat resist on a membrane with high uniformity, the transmittance could not be measured accurately. Thus, we have developed the precise transmittance measurement method by coating resist on a photodiode directly, and the resist thickness on a photodiode was measured by XRR accurately instead on conventional method. Finally, the accurate measurement of EUV resist absorption coefficient was achieved.

“…We previously performed [5][6][7] the transmittance measurement of EUV resist using the EUV reflectometer at BL-10 beamline in the NewSUBARU synchrotron light facility [8]. The absorption coefficient was calculated by using the transmittance and the resist thickness.…”

Section: Introductionmentioning

confidence: 99%

Development of the Transmittance Measurement for EUV Resist by Direct-Resist Coating on a Photodiode

Mamezaki

Watanabe

Harada

et al. 2016

Self Cite

To increase the sensitivity of extreme-ultraviolet (EUV) resist, the method of adding high absorption material in base resin of the resist such as hafnium or zirconium metal has been developed. Since the EUV absorption of the base resin increases, the secondary electron emissions would increase to have a highresist-exposure sensitivity. Thus to achieve the high sensitive EUV resist, it is important to evaluate EUV absorption of the EUV resist precisely. We have developed a novel transmittance measurement method to evaluate EUV resist absorption with high precision at BL10 beamline of NewSUBARU synchrotron light facility. In this novel method, a sample resist was coated on an EUV photodiode directly. The EUV transmittance of the resist was measured with photodiode signals before and after the coating. The resist thickness uniformity coating on a photodiode has much smaller value compared to that coating on a freestanding membrane. By novel method, the measurement precisions of the resist thickness and the EUV transmittance were significantly improved. As the result, the high measurement precision of absorption coefficient of 1% was achieved. This novel method will help the development of high sensitive EUV resist with the high-absorption material.