&lt;title&gt;Dimensional metrology system of shape and scale in pattern transfer&lt;/title&gt;

McIntosh, John M.; Kane, B.C.; Houge, Erik C.; Vartuli, Catherine B.; Mei, Xin

doi:10.1117/12.386473

Cited by 5 publications

(6 citation statements)

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“…There is more monitoring than measuring at this step. Figure 12: Illustrating image sensitivities to focus [9]. a) Image waveform from a feature with varying defocus -focus sensitivities highlighted.…”

Section: Methods For CD Metrology and Process Controlmentioning

confidence: 99%

“…The primary purpose of this metrology in a photolithography module is process control. The control method is to react to significant dimensional deviations in any parameter known to be sensitive to process variations [9]. There is more monitoring than measuring at this step.…”

Section: Methods For CD Metrology and Process Controlmentioning

confidence: 99%

“…Measuring "shape" during a conventional CD measurement, as shown in Figure 13, is made easier by making the image diagnostics readily avail-able to the user. Result is a substantially complete account of the image waveform, typically, without any loss of SEM throughput [9]. Figure 13.…”

Section: Inner Transitions At % Threshold Ins Outer Transitions At % mentioning

confidence: 99%

“…As a result, detailed accounts of focus impact on IC performance were all, but nonexistent and even the roughest estimates of something that might be related to focus control have been made to very good use. Fortunately, a great deal of SEM based metrology learning for applications to process control has been made recently [9][10][11][12][13][14][15][37][38][39][40] and there is every indication that this technology is finally coming into bloom.…”

Section: On-product Focus and Dose Monitorsmentioning

confidence: 99%

“…Figure 13. Collecting image diagnostics with CD-SEM (from [9]). Top: top-down SEM images of a poly resist line defocused (left) and focused (right) during exposure.…”

Section: Inner Transitions At % Threshold Ins Outer Transitions At % mentioning

confidence: 99%

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Applications of image diagnostics to metrology quality assurance and process control

Allgair

Boksha²,

Bunday³

et al. 2003

SPIE Proceedings

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The purpose of this paper is to define standard methods for effective and efficient image-based dimensional metrology for microlithography applications in the manufacture of integrated circuits. This paper represents a consensual view of the co-authors, not necessarily in total agreement across all subjects, but in complete agreement on the fundamentals of dimensional metrology in this application. Fundamental expectations in the conventional comparison-based metrology of width are reviewed, with its reliance on calibration and standards, and how it is different from metrology of pitch and image placement. We discuss the wealth of a priori information in an image of a feature on a mask or a wafer. We define the estimates of deviations from these expectations and their applications to effective detection and identification of the measurement errors attributable to the measurement procedure or the metrology tool, as well as to the sample and the process o fits manufacture. Although many individuals and organizations already use such efficient methods, industrywide standard methods do not exist today. This group of professionals expects that, by placing de facto standard methodologies into public domain, we can help reduce waste and risks inherent in a "spontaneous" technology build-out, thereby enabling a seamless proliferation of these methods by equipment vendors and users of dimensional metrology. Progress in this key technology, with the new dimensional metrology capabilities enabled, leads to improved performance and yield of IC products, as well as increased automation and manufacturing efficiency, ensuring the long-term health of our industry.

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Section: Methods For CD Metrology and Process Controlmentioning

confidence: 99%

Section: Methods For CD Metrology and Process Controlmentioning

confidence: 99%

Section: Inner Transitions At % Threshold Ins Outer Transitions At % mentioning

confidence: 99%

Section: On-product Focus and Dose Monitorsmentioning

confidence: 99%

“…Figure 13. Collecting image diagnostics with CD-SEM (from [9]). Top: top-down SEM images of a poly resist line defocused (left) and focused (right) during exposure.…”

Section: Inner Transitions At % Threshold Ins Outer Transitions At % mentioning

confidence: 99%

See 3 more Smart Citations

Applications of image diagnostics to metrology quality assurance and process control

Allgair

Boksha²,

Bunday³

et al. 2003

SPIE Proceedings

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Model‐based CD–SEM metrology at low and ultralow landing energies: implementation and results for advanced IC manufacturing

Gorelikov¹,

Sullivan²,

Davidson³

2005

Surface & Interface Analysis

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Critical Shape Metrology (CSM), a Critical Dimension Scanning Electron Microscope (CD-SEM)-basedtechnique that extracts accurate feature shape information from images obtained during routine in-line wafer inspection as a means of minimizing measurement bias, is described and explored experimentally. CSM uses intensity profiles from CD-SEM images of known materials that are compared in real time to profiles contained in an off-line generated Monte Carlo SEM simulation library. The library of intensity waveforms spans the range of expected geometric feature shapes and material compositions. Extensive comparison of CSM results to accepted reference measurement system measurements using Critical Dimension Atomic Force Microscopes, cross-sectional SEMs and Focused Ion Beams are made. Agreement of the CSM method to each of these is shown to be better than 1% or within experimental uncertainty and significantly better agreement than traditional CD metrology algorithms.

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Measurement of Linewidth for Nano-scale Lines Prepared by Multilayer Thin Films

Han¹,

Jiang²,

Wei³

et al. 2007

2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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One-dimensional lines with nanometer scale are prepared by using multilayer thin films deposition technique. The Ti/SiO2 multilayer thin films are systematically deposited on silicon substrates in the conventional electron-beam evaporation system. Then a single nanometer scale line can be obtained on the cleaved cross-section of one multilayer thin films structure. The linewidth has been measured by analyzing top-down scanning electron microscope (SEM) images on-line and the linewidth measured is less than 20 nm. In addition, off-line analysis of these images based on image processing technique is performed to measure linewidth accurately. The edges of nanometer lines are detected by image processing and analysis technique. A nanoscale linewidth measurement method based on image processing and analysis technique was put forward.

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<title>Dimensional metrology system of shape and scale in pattern transfer</title>

Cited by 5 publications

References 0 publications

Applications of image diagnostics to metrology quality assurance and process control

Applications of image diagnostics to metrology quality assurance and process control

Model‐based CD–SEM metrology at low and ultralow landing energies: implementation and results for advanced IC manufacturing

Measurement of Linewidth for Nano-scale Lines Prepared by Multilayer Thin Films

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