2000
DOI: 10.1117/12.391730
|View full text |Cite
|
Sign up to set email alerts
|

<title>Development of hybrid CMOS visible focal plane arrays at Rockwell</title>

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
6
0

Year Published

2002
2002
2020
2020

Publication Types

Select...
3
3
2

Relationship

1
7

Authors

Journals

citations
Cited by 15 publications
(6 citation statements)
references
References 3 publications
0
6
0
Order By: Relevance
“…While modern CCD camera noise is dominated by output amplifier thermal noise (after the application of correlated double sampling in off-chip support circuits) or extraneous system noise due to inadequate device transimpedance to convert small photocurrents into usable voltage signals, CMOS-based imagers can provide lower temporal noise because each pixel can have a high-transimpedance amplifier whose noise-limiting bandwidth is several magnitudes smaller than the CCD output [9]. This advantage is also leading to the development of CMOS-based hybrids [10] that use either silicon detectors or alternative materials with optimized bandgap to reduce dark current, raise operating temperature and optimize the spectral bandpass…”
Section: Read Noisementioning
confidence: 97%
“…While modern CCD camera noise is dominated by output amplifier thermal noise (after the application of correlated double sampling in off-chip support circuits) or extraneous system noise due to inadequate device transimpedance to convert small photocurrents into usable voltage signals, CMOS-based imagers can provide lower temporal noise because each pixel can have a high-transimpedance amplifier whose noise-limiting bandwidth is several magnitudes smaller than the CCD output [9]. This advantage is also leading to the development of CMOS-based hybrids [10] that use either silicon detectors or alternative materials with optimized bandgap to reduce dark current, raise operating temperature and optimize the spectral bandpass…”
Section: Read Noisementioning
confidence: 97%
“…Conventional CMOS imagers, therefore, are fundamentally limited to extremely poor near-infrared response. For this reason the only inroads that CMOS can make into the astronomy market will be by hybrid devices, described in Section 5.2.1, in which a separate diode array, made on highresistivity silicon, is bump bonded to a CMOS readout multiplexer (MUX) (Bai et al, 2000). Whether this can be done in a cost-effective way remains to be seen.…”
Section: Ccd Vs Cmos: Process Comparisonsmentioning
confidence: 98%
“…The p-i-n detector array consists of a thick (∼185 μm) active region of high-purity silicon sandwiched between regions doped p-type and n-type (Bai et al, 2000). An example of this type of array is shown in Figure 25.…”
Section: Silicon P-i-n Detector Arraysmentioning
confidence: 99%
“…The size of the pixels is set by a number of considerations: (1) the minimum and maximum acceptable stored charge (dynamic range per pixel), (2) the requirement that we maximize the AΩ product, (3) sky noise limited operation with 10 sec exposures, (4) depth of focus (a consideration at near-IR where photons penetrate silicon), ( 5) maximize the near-IR QE (a pixel geometry constraint), (6) good performance in the near-IR, and (7) minimize device area in order to maximize yield. These demands jointly constrain the pixel size to about 10 microns.…”
Section: The Focal Plane Arraymentioning
confidence: 99%