&lt;title&gt;Compensation of convex corners in sensors with bossed structure etched in TMAH and TMAH+IPA solutions&lt;/title&gt;

Barycka, Irena; Dziuban, Jan; Kramkowska, M.; Zubel, Irena

doi:10.1117/12.435942

Cited by 1 publication

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References 7 publications

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“…As is commonly stated in the literature, high-index crystallographic ( 133), (211), ( 212), (311), (321) and (411) dissolve in alkaline solutions much faster than ( 100) or ( 110) depending on the etch rate of the particular plane, observed for the composition used and the temperature of solution. Etch rates of highindexed planes, as well as the compensation of the under-etching, have been investigated in many papers [55,78,[117][118][119][120][121][122][123][124][125][126][127][128][129][130][131][132]. There is no agreement as to which plane plays the most important role.…”

Section: Bossed and Corrugated Membranesmentioning

confidence: 99%

Deep, Three-Dimensional Silicon Micromachining

Bonding in Microsystem Technology

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Three-dimensional (3-D) silicon structures (also called silicon micromechanical structures, micromechanical constructions or just micromechanical structures) are commonly produced by means of wet deep micromachining of silicon substrates. Structures are truly three-dimensional; they are micromachined ''through'' a substrate.The description of wet deep micromachining, presented in this chapter, begins with determination of the mechanical properties of silicon and characterization of silicon substrates used for fabrication of micromechanical structures and basic features of wet anisotropic etching of silicon (focused on etching in KOH). Next, fabrication procedures of basic silicon microconstructions, and examples of its application in microsystems, are described. * In ref. [9] the method of plastic permanent strain of silicon microstructures is described, as well as the permanent strain of a silicon substrate (heated to 800°C) by means of the method of applying a controlled pressure in such a way that material deformation does not exceed 0.1 mm/min. This means that silicon ''flows'' mechanically at a higher temperature. This phenomenon is of no significance in silicon microsystems, because their working temperature does not exceed a few hundred degrees centigrade. * This weight is maintained during silicon monocrystal fabrication through a narrow (2 mm) silicon seed neck. Tensile stress generated in the neck amounts to over 12 MPa [1]. However, the material does not crack. * Much credit for the discovery of anisotropic properties of crystals should be given to Rene ´-Just Hau ¨y, a canon from the Notre-Dame Cathedral of Paris in about 1802 (Traite `de Crystalographie, 1822). * It has been estimated that flying micro objects covered with such ''skin'' can reach speed of 20M (M -Mach number) in earth's atmosphere. † Grove-Deal effect: a strongly curved silicon surface oxidizes slower than a flat one.

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Section: Bossed and Corrugated Membranesmentioning

confidence: 99%

Deep, Three-Dimensional Silicon Micromachining

Bonding in Microsystem Technology

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<title>Compensation of convex corners in sensors with bossed structure etched in TMAH and TMAH+IPA solutions</title>

Cited by 1 publication

References 7 publications

Deep, Three-Dimensional Silicon Micromachining

Deep, Three-Dimensional Silicon Micromachining

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