&lt;title&gt;Characterization of CZT detectors grown from horizontal and vertical Bridgman&lt;/title&gt;

Hermon, H.; Schieber, M.; Goorsky, Mark S.; Lam, Terrance Thiem; Meerson, E. E.; Yao, H. Walter; Erickson, Jay C.; James, R. B.

doi:10.1117/12.407580

Cited by 7 publications

(2 citation statements)

References 11 publications

(23 reference statements)

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“…The electron mobility was found to be 906.4 cm 2 /V • s at room temperature and the electron mobility-lifetime product was also found to be (9.88 ± 2.33) × 10 −3 cm 2 /V. These values obtained in the present work are in good accord with previous values [13], but the electron lifetime was obtained to be about 10 µs which was much bigger than previously reported values [14]. Though both the mobility and the lifetime contribute to the pulse shape with different interaction positions, the lifetime is more important than the mobility for making pulse shapes when we consider the charge trapping.…”

Section: Discussionsupporting

confidence: 92%

Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

Cho¹,

Lee²,

Kwon³

et al. 2011

J. Inst.

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In this work we present results on the measurement of the drift mobility and the mobility-lifetime product of charge carriers in a 16-pixellated CdZnTe detector. For the determination of an interaction position based on the pulse rise-time method in a CZT detector, it is necessary to characterize the transport properties governed by drift mobility and lifetime for electrons and holes. In order to extract the transport properties of an electron and a hole, we bombarded 5.5-MeV alpha particles from a 241 Am source and 81-keV gamma rays emitted from a 133 Ba source on the negatively biased contact of the CZT detector. A time-of-flight (TOF) method was used to measure the electron drift mobility at room temperature whose value turned out to be 906.4 cm 2 /V• s. With the Hecht's equation, the electron mobility-lifetime product was also determined from the bias-dependent alpha response and was equal to (9.88 ± 2.33) × 10 −3 cm 2 /V. On the other hand, the hole mobility-lifetime product was evaluated by a model based on the average charge collection efficiency which accounts for the absorption probability with a given photon energy. By using a single parameter fitting of the model, we obtained the hole mobility-lifetime product of (8.28 ± 0.17) × 10 −4 cm 2 /V. KEYWORDS: Charge transport and multiplication in solid media; Gamma detectors; Instrumentation and methods for time-of-flight (TOF) spectroscopy

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Section: Discussionsupporting

confidence: 92%

Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

Cho¹,

Lee²,

Kwon³

et al. 2011

J. Inst.

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“…However, a downside to this method, in comparison to the more traditional High-Pressure Bridgman (HPB) method, is that its volume resistivity is lower by an order of magnitude: approximately 10 9 Ω•cm. This lower resistivity leads to higher leakage current, ultimately reducing the detector's energy resolution at lower energies (<100 keV) [29].…”

Section: Preparation Of Czt Materials 221 the Evolution Of The Way Cz...mentioning

confidence: 99%

Research on the Technological Progress of CZT Array Detectors

Li,

Cheng,

Liu

et al. 2024

Sensors

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CdZnTe (CZT) is a new type of compound semiconductor that has emerged in recent years. Compared to other semiconductor materials, it possesses an ideal bandgap, high density, and high electron mobility, rendering it an excellent room-temperature composite semiconductor material for X-ray and γ-ray detectors. Due to the exceptional performance of CZT material, detectors manufactured using it exhibit high energy resolution, spatial resolution, and detection efficiency. They also have the advantage of operating at room temperature. CZT array detectors, furthermore, demonstrate outstanding spatial detection and three-dimensional imaging capabilities. Researchers worldwide have conducted extensive studies on this subject. This paper, building upon this foundation, provides a comprehensive analysis of CZT crystals and CZT array detectors and summarizes existing research to offer valuable insights for envisioning new detector methodologies.

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Comparison of cadmium zinc telluride crystals grown by horizontal and vertical Bridgman and from the vapor phase

Schieber

James

Hermon

et al. 2001

Journal of Crystal Growth

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<title>Characterization of CZT detectors grown from horizontal and vertical Bridgman</title>

Cited by 7 publications

References 11 publications

Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

Measurement of the drift mobilities and the mobility-lifetime products of charge carriers in a CdZnTe crystal by using a transient pulse technique

Research on the Technological Progress of CZT Array Detectors

Comparison of cadmium zinc telluride crystals grown by horizontal and vertical Bridgman and from the vapor phase

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