&lt;title&gt;Characteristics Of InSb Photovoltaic Detectors At 77K And Below&lt;/title&gt;

Wimmers, James T.; Smith, D. S.

doi:10.1117/12.934189

Cited by 18 publications

(9 citation statements)

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“…Epitaxy is not used; instead, the standard manufacturing technique begins with bulk n-type single crystal wafers with donor concentration about 10 15 cm À3 . Wimmers et al have presented the status of InSb photodiode technology for a wide variety of linear and FPAs [21,22].…”

Section: Insb Photodiodesmentioning

confidence: 99%

Infrared detectors: an overview

Rogalski

2002

Infrared Physics & Technology

687

343

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The paper presents progress in infrared (IR) detector technologies during 200 history of their development. Classification of two types of IR detectors (photon detectors and thermal detectors) is done on the basis of their principle of operation. The overview of IR systems and detectors is presented. Also recent progress in different IR technologies is described. Discussion is focused mainly on current and the most rapidly developing detectors: HgCdTe heterostructure photodiodes, quantum well AlGaAs/GaAs photoresistors, and thermal detectors. The outlook for near-future trends in IR technologies is also presented. Ó

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Section: Insb Photodiodesmentioning

confidence: 99%

Infrared detectors: an overview

Rogalski

2002

Infrared Physics & Technology

687

343

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“…Single crystal InSb and InAs 1 À x Sb x , have been used as high mobility photodetectors in the Long Wavelength Infrared (LWIR) and Mid Wavelength Infrared (MWIR) [1,2] with detectivities approaching theoretical limits [3,4]. Sensing in the MWIR and LWIR transmission windows of the atmosphere has several applications, including thermal imaging in the LWIR (8-12 mm) as well as the applicability of MWIR signatures (3-8 mm) for tactical guidance applications.…”

Section: Introductionmentioning

confidence: 99%

Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7

Zens

Becla

Agarwal

et al. 2011

Journal of Crystal Growth

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“…Summarizing these results, the following contributors to total noise have been derived: (c d+c v ) (12) This noise is again independent of the value of R m because it was tacitly assumed that the time constant formed by C d , C v and R m is much less than the time the multiplexer access switch is on.…”

Section: Other Noise Sourcesmentioning

confidence: 99%

Performance Predictions Of InSb Switched Fet Hybrid Arrays

Davis¹,

Niblack²

1986

SPIE Proceedings

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A technique, developed by Cincinnati Electronics and Jet Propulsion Laboratory, of utilizing charge integration with InSb photovoltaic arrays is described.This device uses a MOSFET switched silicon multiplexer to sequentially connect each detector to a common line and JFET amplifier.A noise model is presented which can be used to predict performance of the detector /multiplexer system.Performance prediction curves are included that allow comparisons and decisions related to system design. This noise model can be generalized to calculate performance characteristics, particularly D* and NEP, for any detector /multiplexer configuration.

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<title>Characteristics Of InSb Photovoltaic Detectors At 77K And Below</title>

Cited by 18 publications

References 0 publications

Infrared detectors: an overview

Infrared detectors: an overview

Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7

Performance Predictions Of InSb Switched Fet Hybrid Arrays

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