&lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;${C}_{\textsf{OSS}}$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt; Measurements for Superjunction MOSFETs: Limitations and Opportunities

Zulauf, Grayson; Roig-Guitart, Jaume; Plummer, J.D.; Rivas-Davila, Juan

doi:10.1109/ted.2018.2880952

Cited by 30 publications

(8 citation statements)

References 10 publications

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“…Another key area of development is the switching characteristics of multidimensional architectures, particularly at high frequency. For example, interesting dynamic phenomena such as output capacitance hysteresis 103 were reported in superjunction devices and the inter-fin design in FinFETs, which is not critical for R ON,SP and BV, was found to play a determining role in the switching speed and losses. 104 Reliability and robustness are also important aspects of these devices and work in this areas is increasing with reports looking at their avalanche and short circuit robustness, [105][106][107] gate reliability and stability, 108 as well as the cosmic ray robustness.…”

Section: Discussionmentioning

confidence: 99%

Multidimensional device architectures for efficient power electronics

2022

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Power semiconductor devices are key to delivering high efficiency energy conversion in power electronics systems, which is critical towards efforts in reducing energy loss, cutting carbon dioxide emissions and creating more sustainable technology. While the use of wide or ultra-wide bandgap materials will be required in order to create improved power devices, multidimensional architectures can also improve performance, regardless of the underlying material technology. In particular, multidimensional device architectures -such as superjunction, multi-channel and multi-gate technologies -can enable advances in the speed, efficiency, and form factor of power electronics systems. Here we review the development of multidimensional device architectures for efficient power electronics. We explore the rationale for using multidimensional architectures and the different architectures available. We also consider the performance limits, scaling, and material figure-of-merits of the architectures, and identify key technological challenges that need to be addressed in order to realize the full potential of the approach.

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Section: Discussionmentioning

confidence: 99%

Multidimensional device architectures for efficient power electronics

2022

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“…In GaN HEMTs, output charge versus V DS characteristics show hysteresis in large-signal, dynamic double sweep, producing power loss in a cycle of charging and discharging. This C OSS loss issue first gained attention in Si superjunction devices [101], [102] and recently in GaN HEMTs. Fig.…”

Section: B Output Capacitance Lossmentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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“…Furthermore, the voltage stress of switches is significantly reduced compared to that of the classical seriesparallel converter [5], which decreases Coss loss. The output capacitance parameter, its large signal characterization, as well as the energy stored (Eo) and dissipated versus drainsource voltage (VDS) are discussed [8].…”

Section: Introductionmentioning

confidence: 99%

High-Gain Switched-Capacitor DC-DC Converter With Low Count of Switches and Low Voltage Stress of Switches

et al. 2021

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This paper presents a novel concept of a high-voltage-gain DC-DC converter. The converter is made up of switched capacitors and passive resonant branches. A significant reduction in the count of switches and low voltage stress on the switches is achieved in this proposed converter topology, in comparison to that of a classical SC series-parallel converter. It is essential from the cost, volume, and efficiency of the converter standpoint. The reduction in the count of switches is threefold. The highest voltage stress on the switches depends on the output voltage and is decreased in the proposed converter as well, as the output voltage is divided into two series-connected capacitors. The presented results demonstrate the operation of the converter with the use of resonant branches, its switching strategies, voltage stresses of switches, efficiency, voltage gain, and output voltage regulation as well as the zero-voltage switching (ZVS) operation. The paper also presents novel issues related to analytical loss modeling, extended concepts of topology, converter start-up, and operation during transient states. The demonstrated concept of the converter, the analytical discussion and its design, as well as the experimental setup and results clearly demonstrate the optimization achievements.INDEX TERMS Boost converters, DC-DC converters, High voltage gain converter, Switched-capacitor converter.

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<inline-formula> <tex-math notation="LaTeX">${C}_{\textsf{OSS}}$ </tex-math> </inline-formula> Measurements for Superjunction MOSFETs: Limitations and Opportunities

Cited by 30 publications

References 10 publications

Multidimensional device architectures for efficient power electronics

Multidimensional device architectures for efficient power electronics

Stability, Reliability, and Robustness of GaN Power Devices: A Review

High-Gain Switched-Capacitor DC-DC Converter With Low Count of Switches and Low Voltage Stress of Switches

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