LPP source system development for HVM

Brandt, David C.; Fomenkov, Igor V.; Ershov, Alex I.; Partlo, William N.; Myers, David W.; Sandstrom, Richard L.; Böwering, N.; Vaschenko, G.; Khodykin, Oleh V.; Bykanov, Alexander N.; Srivastava, Shailendra N.; Ahmad, İmtiaz; Rajyaguru, Chirag; Golich, Daniel J.; Dea, Silvia De; Hou, Richard R.; O’Brien, Kevin; Dunstan, Wayne J.

doi:10.1117/12.848404

Cited by 12 publications

(11 citation statements)

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“…They reported that with the HVM1, the IF equivalent EUV power of 11 W was observed when the laser was operated at 50% duty cycle. 5 The diameter of tin droplets generated at 40 kHz was 30 μm, 5 and the ejection speed of droplets was 30 m∕s.…”

Section: Sn Lpp At Cymer and Gigaphotonmentioning

confidence: 99%

“…5 Then the EUV power at the source is calculated to be 17.5 kW × 3% ¼ 525 W∕2πsr. Because the repetition rate was 40 kHz, the EUV energy in one pulse is 26 mJ∕4πsr.…”

Section: Opacitymentioning

confidence: 99%

“…Owing to hard work of source suppliers, intermediatefocus (IF) point equivalent EUV power of several watts is now available 4,5 which allows printing of fine patterns with throughput of several wafers per hour. However, for highvolume manufacturing with throughput of over 100 wafers per hour, EUV power of 350 W is supposed to be required.…”

Section: Introductionmentioning

confidence: 99%

“…5 By considering the difficulty of suppressing Sn contamination, this is a great achievement, but this lifetime is still very short, because it is only five hours for throughput of 100 wph. One year has 8,766 hours.…”

mentioning

confidence: 99%

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Tin laser-produced plasma as the light source for extreme ultraviolet lithography high-volume manufacturing: history, ideal plasma, present status, and prospects

Tomie

2012

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Today intermediate-focus equivalent extreme ultraviolet (EUV) power of several watts is now available, and EUV lithography scanners are being considered as potential scanners for high-volume manufacturing (HVM) tools. However, for high-volume manufacturing with throughput of over 100 wafers per hour, EUV power of 350 W may be required. We review the history of EUV sources for lithography with tin as fuel. We discuss the ideal plasma for tin sources for extreme ultraviolet lithography (EUVL), conditions for a high conversion efficiency of 4% to 5% in 2πsr, and the existence of a repetition rate limit at around 40 kHz. We review the present status reported by EUV source suppliers and the prospects of tin laserproduced plasma as an EUV source for HVM EUVL.

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Section: Sn Lpp At Cymer and Gigaphotonmentioning

confidence: 99%

“…5 Then the EUV power at the source is calculated to be 17.5 kW × 3% ¼ 525 W∕2πsr. Because the repetition rate was 40 kHz, the EUV energy in one pulse is 26 mJ∕4πsr.…”

Section: Opacitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Tin laser-produced plasma as the light source for extreme ultraviolet lithography high-volume manufacturing: history, ideal plasma, present status, and prospects

Tomie

2012

J. Micro/Nanolith. MEMS MOEMS

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“…This paper focuses on some aspects of EUV source technology applicable to EUVL, in particular laser−pro− duced−plasma (LPP) source emitting at a 13.5−nm wave− length using Sn as a fuel and driven by a pulsed CO 2 laser. Such choice of fuel and driver was shown to be the most practical option for a number of reasons; highest possible conversion efficiency (CE) in a range of 3-6% (at 2−% bandwidth at 13.5 nm) among the low−environmental−haz− ard candidate materials [20,21]; technical feasibility of EUV collection optics with substantial reflectivities around the 13.5 nm [22]; sufficiently small size of the EUV emitting plasma thanks to the focusability of a driv− ing laser beam; low debris production when combined with a 10.6−micron wavelength provided by a CO 2 laser driver [23][24]; and finally the viability of required multi− −kW laser power output of mentioned CO 2 lasers [25][26] allowing for a power scalability. The LPP source principle is also a promising route to a shorter wavelength range of 6.Xnm using Gd as a fuel and is presently an area of active research efforts [27,28].…”

Section: Introductionmentioning

confidence: 99%

CO2 laser drives extreme ultraviolet nano-lithography — second life of mature laser technology

Nowak

Ohta

Suganuma

et al. 2013

Opto-Electronics Review

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It was shown both theoretically and experimentally that nanosecond order laser pulses at 10.6 micron wavelength were superior for driving the Sn plasma extreme ultraviolet (EUV) source for nano-lithography for the reasons of higher conversion efficiency, lower production of debris and higher average power levels obtainable in CO2 media without serious problems of beam distortions and nonlinear effects occurring in competing solid-state lasers at high intensities. The renewed interest in such pulse format, wavelength, repetition rates in excess of 50 kHz and average power levels in excess of 18 kiloWatt has sparked new opportunities for a matured multi-kiloWatt CO2 laser technology. The power demand of EUV source could be only satisfied by a Master-Oscillator-Power-Amplifier system configuration, leading to a development of a new type of hybrid pulsed CO2 laser employing a whole spectrum of CO2 technology, such as fast flow systems and diffusion-cooled planar waveguide lasers, and relatively recent quantum cascade lasers. In this paper we review briefly the history of relevant pulsed CO2 laser technology and the requirements for multi-kiloWatt CO2 laser, intended for the laser-produced plasma EUV source, and present our recent advances, such as novel solid-state seeded master oscillator and efficient multi-pass amplifiers built on planar waveguide CO2 lasers.

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High temperature fast response pressure probe for use in liquid metal droplet dispensers

Rollinger

Mansour

Abhari

2012

Review of Scientific Instruments

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A miniature fast response high temperature pressure probe, with demonstrated use in liquid metals up to 255 °C (528 K), has been developed. Innovative packaging technologies have been applied to integrate a conventional piezoresistive silicon pressure sensor into the probe, without the need of an auxiliary water-cooling system. In situ static calibrations are used to verify the linearity of the pressure signal and the stability of the pressure sensitivity (0.5% standard deviation over 70 min at 255 °C). Dynamic calibration, completed in an air shock tube facility, yields the probe's natural frequency. This frequency, when corrected for probe operation in liquid tin, is found to be 100 kHz. The reliability and accuracy of the probe is assessed by mounting it in a tin droplet dispenser for use in an extreme ultraviolet light source. Droplet dispensers typically include an excitation mechanism, which can be based on the generation of acoustic pressure waves to impose a desired droplet frequency. The probe accuracy is verified by the comparison of pressure measurements with laser Doppler vibrometry measurements of the pressure generating structure. A reference pressure measurement, conducted at representative conditions, shows a complex frequency response, with peaks distributed over three orders of magnitude and maximum amplitude of 440 mbar. Time variance of the excitation mechanism due to thermal transients is studied by monitoring the pressure response during operation. Finally, the linearity of the excitation system, with respect to the excitation amplitude, is verified by response measurements. In conclusion, the developed probe is capable of characterizing the excitation mechanism of a liquid metal droplet dispenser. Additionally, real-time monitoring of the performance of the excitation system during long-term operation is possible.

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LPP source system development for HVM

Cited by 12 publications

References 0 publications

Tin laser-produced plasma as the light source for extreme ultraviolet lithography high-volume manufacturing: history, ideal plasma, present status, and prospects

Tin laser-produced plasma as the light source for extreme ultraviolet lithography high-volume manufacturing: history, ideal plasma, present status, and prospects

CO2 laser drives extreme ultraviolet nano-lithography — second life of mature laser technology

High temperature fast response pressure probe for use in liquid metal droplet dispensers

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