Lowering the energy consumption in silicon photonic devices and systems [Invited]

Zhou, Zhen; Yin, Bing; Deng, Qingzhong; Li, Xinbai; Cui, Jishi

doi:10.1364/prj.3.000b28

Cited by 53 publications

(36 citation statements)

References 144 publications

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“…[17][18][19][20][21] However, in the UV region, silicon photodetectors face the major challenge of low photo-responsivity (typically, less than 0.1 A W −1 for λ < 400 nm) due to high reflection coefficient and shallow penetration depth of UV light in silicon. For example, a typical silicon PN junction depth (X J ) is larger than 200 nm.…”

Section: Introductionmentioning

confidence: 99%

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

et al. 2017

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We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W −1 ), fast time response (5 ns), high specific detectivity (1.6 × 10 13 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W −1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and "dissipation-less" remote sensor networks.

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Section: Introductionmentioning

confidence: 99%

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

et al. 2017

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“…The ring, waveguide and MEMS actuators can be patterned with standard optical lithography, thus rendering the fabrication of the whole system technologically feasible. Although the strong thermo-optic effect of materials used as a platform for constructing the considered filters allows one to efficiently tune them, it is also responsible for making them prone to temperature fluctuations [83]. This susceptibility may cause the bias point of the ODI and the resonance wavelength of the MRR to drift, which in turn could affect the process of suppressing the red-shifted spectral components without significantly impairing the input data carrier and eventually leading to temperature-dependent performance degradation.…”

Section: Odi Vs Mrr Qualitative Comparisonmentioning

confidence: 99%

“…Although it was numerically verified above that the MRR is, by its principle of operation, more tolerant to detuning offsets than the ODI, still, special care must additionally be taken in order to enhance the resilience of both schemes to possible temperature changes while at the same time achieving this goal in an energy-efficient manner. To this aim, it has been identified [83] that while athermal operation of the ODI is possible without any extra energy consumption, there is no efficient passive solution to the problem for the MRR, as well. Furthermore, the exploitation of negative thermo-optic materials that could resolve the thermo-optic issue in a straightforward manner faces challenges with regard to compatibility with standard CMOS technology and is the subject of intense research.…”

Section: Odi Vs Mrr Qualitative Comparisonmentioning

confidence: 99%

“…Especially, the capability for co-packaging is rather crucial towards compensating for the reduction in the amplified signal level due to notch filtering and hence for extending transmission reach. Since the MRR can be made more compact than the ODI [83,85], the use of the former could be favored for mitigating the SOA pattern effect in applications where space availability is critical, as in the transmitter side for power boosting, especially of multiple wavelength outputs, or the receiver end for power preamplification, or within intra-data center optical links [85]. On the other hand, it should be noted that both filters are compatible with standard CMOS (complementary metal-oxide-semiconductor) processing in silicon photonics platform [85,86] and hence can leverage the benefits that accompany this mature fabrication technology.…”

Section: Odi Vs Mrr Qualitative Comparisonmentioning

confidence: 99%

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Comparison of Basic Notch Filters for Semiconductor Optical Amplifier Pattern Effect Mitigation

2017

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Abstract:We conduct a thorough comparison of two basic notch filters employed to mitigate the pattern effect that manifests when semiconductor optical amplifiers (SOAs) serve linear amplification purposes. The filters are implemented using as the building architecture the optical delay interferometer (ODI) and the microring resonator (MRR). We formulate and follow a rational procedure, which involves identifying and applying the appropriate conditions for the filters' spectral response slope related to the SOA pattern effect suppression mechanism. We thus extract the values of the free spectral range and detuning of each filter, which allow one to equivocally realize the pursued comparison. We define suitable performance metrics and obtain simulation results for each filter. The quantitative comparison reveals that most employed metrics are better with the MRR than with the ODI. Although the difference in performance is small, it is sufficient to justify considering also using the MRR for the intended purpose. Finally, we concisely discuss practical implementation issues of these notch filters and further make a qualitative comparison between them in terms of their inherent advantages and disadvantages. This discussion reveals that each scheme has distinct features that render it appropriate for supporting SOA direct signal amplification applications with a suppressed pattern effect.

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“…Furthermore, they support higher bandwidth, denser interconnects, with higher efficiency in addition to reduced cross talk, latency, and specifically power consumption [3,4]. In particular, the silicon photonics platform is becoming the preferred technology for photonic integrated circuits [5,6], due to its high index contrast, low optical loss in the major telecommunications optical windows, and established CMOS fabrication technology. However, silicon's large thermo-optic coefficient (1.8 × 10 −4 /℃), can limit the application of these devices in applications where large temperature changes are experienced.…”

Section: Introductionmentioning

confidence: 99%

Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material

Namnabat¹,

Kim²,

Jones³

et al. 2017

Opt. Express

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Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/℃ for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130℃ for 10.5 hours. We also achieved thermal shifts below 1 pm/℃ for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

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Lowering the energy consumption in silicon photonic devices and systems [Invited]

Cited by 53 publications

References 144 publications

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Comparison of Basic Notch Filters for Semiconductor Optical Amplifier Pattern Effect Mitigation

Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material

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