Lowering firing temperature of a p-type passivated emitter rear contact Si solar cell via current injection

Choi, Dongjin; Park, HyunJung; Bae, Soohyun; Shin, Sug Kyun; Han, Hyebin; Klöter, B.; Kim, Dong Hwan; Lee, Hae‐Seok; Kang, Yoonmook

doi:10.1016/j.solmat.2022.111587

Cited by 5 publications

(2 citation statements)

References 39 publications

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“…Strong etching of individual poly‐Si grains is probably caused by an oxidation process with silver oxide. [ 36,37 ] This etching mechanism stops, especially on planar samples, at the interface between poly‐Si and Si wafer at the thermal oxide. To explain why in the poly‐Si layer some grains are etched significantly faster than others, we assume that they have a different crystal orientation.…”

Section: Discussionmentioning

confidence: 99%

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Glatthaar

Huster

Okker

et al. 2022

Physica Status Solidi (a)

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One of the main challenges for the industrialization of the passivating contact approach for Si solar cells is the metallization with screen‐printed paste while maintaining the low saturation current density. Using a non‐commercial Ag paste to metallize atmospheric pressure chemical vapor deposition (APCVD) (n) poly‐Si, the metal contact formation for passivating contacts on planar and textured substrates is investigated. The paste creates deep imprints caused by silver crystallite formation at the pyramid tips of textured silicon wafers. In contrast, on planar wafers, the silver crystallite growth stops at the interface between poly‐Si and the Si wafer. Similar contact resistivities are determined by comparing textured and planar Si samples. On planar samples, a contact resistivity of 4.6(14) mΩcm2 and a saturation current density of only 141(10) fA cm−2 for the metallized contact area are demonstrated. Textured samples with a contact resistivity of 2.7(17) mΩcm2 show a higher saturation current of 480(40) fA cm−2. This etching behavior is investigated by structural and elemental analyses using scanning electron microscopy.

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Section: Discussionmentioning

confidence: 99%

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Glatthaar

Huster

Okker

et al. 2022

Physica Status Solidi (a)

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“…Recent studies explain the etching mechanism with the etching reaction of the glass frit normally included in the metal paste, which supports Ag crystal formation via a redox reaction [19][20][21][22]. It is reported that most likely Si and SiN x :H are etched by the metal oxides [23][24][25][26]. In the classical view, lead oxide (PbO) was often identified here, but due to the general regulations on Pb and other environmental reasons, PbO is nowadays used less and less [27].…”

Section: Introductionmentioning

confidence: 99%

Model for contact formation of novel TeO₂ containing Pb-free silver paste on n⁺ and p⁺ doped crystalline silicon

et al. 2023

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Silver (Ag) pastes are widely used in the global market for most solar cell architectures. Thereby, lead (Pb) is no longer wanted in productions for environmental reasons. In this work, a model for the contact formation between Pb-free, tellurium oxide (TeO2) containing screen-printable Ag pastes and silicon is presented. It is shown that Te plays a key role in this model. Te is not only an important part in etching the surface passivation layers with TeO2 dissolving the dielectric layer but also for a formation of the contacts with Te forming a compound consisting of Ag2Te. Using EDX mapping, local contact regions can be examined and interpreted for contact formation. The used paste system enables far more flexible paste mixturing leading to a novel developed commercial paste which is on a par with other pastes used in industry concerning the resulting contact properties. This is also demonstrated in this work by the very low contact resistivity of less than 1 mΩcm2 over a wide range of firing peak temperatures. It is additionally shown that good resistivities can be achieved on both n+- and p+-doped regions.

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Reduced Toxicity and Aqueous-Based Solvent Using Phosphoric Acid as the Dopant Source for Formation Emitter Layer of Silicon Solar Cells

Mohd Ahir,

Sepeai,

Mohd Sinin

et al. 2023

Silicon

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Lowering firing temperature of a p-type passivated emitter rear contact Si solar cell via current injection

Cited by 5 publications

References 39 publications

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Model for contact formation of novel TeO₂ containing Pb-free silver paste on n⁺ and p⁺ doped crystalline silicon

Reduced Toxicity and Aqueous-Based Solvent Using Phosphoric Acid as the Dopant Source for Formation Emitter Layer of Silicon Solar Cells

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Lowering firing temperature of a p-type passivated emitter rear contact Si solar cell via current injection

Cited by 5 publications

References 39 publications

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Model for contact formation of novel TeO2 containing Pb-free silver paste on n+ and p+ doped crystalline silicon

Reduced Toxicity and Aqueous-Based Solvent Using Phosphoric Acid as the Dopant Source for Formation Emitter Layer of Silicon Solar Cells

Contact Info

Product

Resources

About

Model for contact formation of novel TeO₂ containing Pb-free silver paste on n⁺ and p⁺ doped crystalline silicon