Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

Khound, Sagarika; Sarma, Ranjit

doi:10.1007/s00339-017-1470-8

Cited by 9 publications

(9 citation statements)

References 39 publications

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“…Until now, REO dielectric films in OFETs were processed by thermal evaporation in vacuum ,, or using the sol–gel technique. , However, thermal evaporation is an energy-intensive process and could cause partial material degradation and stoichiometry change. , The sol–gel technique is rather straightforward and simple but requires annealing of the precursor films at high (usually >600 °C) temperatures. Furthermore, the films formed by the sol–gel process might be contaminated with impurities coming from solution chemistry and thermal decomposition of the precursor compounds.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics

Talalaev

Luchkin

Mumyatov

et al. 2023

ACS Appl. Electron. Mater.

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Rare earth metal oxides (REOs) represent promising gate dielectric materials for field-effect transistors due to their high dielectric constants required for suppressing leakage currents in devices. In this paper, we present an approach to deposition of uniform REO gate dielectric coatings by oxidation of thin rare earth metal films in air at relatively low temperatures (100–250 °C). The proposed methodology was extensively explored in organic field-effect transistors (OFETs) using five benchmark organic semiconductors and six REOs as gate dielectrics. It was shown that OFETs with the REO gate dielectrics deliver on average considerably better characteristics compared to the reference devices using electrochemically grown aluminum oxide dielectric (AlOx). OFETs on a flexible plastic substrate were demonstrated, which makes this approach very attractive for developing flexible and wearable electronic devices with improved performance.

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Section: Introductionmentioning

confidence: 99%

High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics

Talalaev

Luchkin

Mumyatov

et al. 2023

ACS Appl. Electron. Mater.

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“…As an alternative, organic/inorganic hybrid dielectric layers where polymer films were utilized as organic layers have also been suggested (Table S1, Supporting Information). [27][28][29][30][31][32][33][34][35][36][37][38] Polymeric layers with reliable insulating properties can provide a favorable interface with organic semiconductors, and thus, high-performance OTFTs have been demonstrated therewith. [41] Moreover, one of the most important advantages obtained from the polymer/inorganic hybrid layers is the improved operational stability of OTFTs.…”

Section: Introductionmentioning

confidence: 99%

“…[ 16,17 ] Along this line, various types of organic and inorganic hybrid dielectric materials have been investigated extensively to exploit the advantages from both organic and inorganic dielectric materials. [ 6,18–38 ] For example, inorganic dielectric materials such as aluminum oxide (AlO x ) and hafnium oxide (HfO x ) generally exhibited high dielectric constant as well as outstanding dielectric strength. [ 39 ] However, the abundant amount of hydroxyl groups on the surface of the oxide layer often generates unwanted trap sites, which thus impair the OTFT performance.…”

Section: Introductionmentioning

confidence: 99%

A Sub‐20 nm Organic/Inorganic Hybrid Dielectric for Ultralow‐Power Organic Thin‐Film Transistor (OTFT) With Enhanced Operational Stability

Choi

Lee

Kang

et al. 2022

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Organic/inorganic hybrid materials are utilized extensively as gate dielectric layers in organic thin‐film transistors (OTFTs). However, inherently low dielectric constant of organic materials and lack of a reliable deposition process for organic layers hamper the broad application of hybrid dielectric materials. Here, a universal strategy to synthesize high‐k hybrid dielectric materials by incorporating a high‐k polymer layer on top of various inorganic layers generated by different fabrication methods, including AlOx and HfOx, is presented. Those hybrid dielectrics commonly exhibit high capacitance (>300 nF·cm–2) as well as excellent insulating properties. A vapor‐phase deposition method is employed for precise control of the polymer film thickness. The ultralow‐voltage (<3 V) OTFTs are demonstrated based on the hybrid dielectric layer with 100% yield and uniform electrical characteristics. Moreover, the exceptionally high stability of OTFTs for long‐term operation (current change less than 5% even under 30 h of voltage stress at 2.0 MV·cm–1) is achieved. The hybrid dielectric is fully compatible with various substrates, which allows for the demonstration of intrinsically flexible OTFTs on the plastic substrate. It is believed that this approach for fabricating hybrid dielectrics by introducing the high‐k organic material can be a promising strategy for future low‐power, flexible electronics.

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“…Hence, research in this direction is focused on the usage of high-k dielectric materials, bilayer and hybrid (organic-inorganic) dielectric layer structure, use of high dipole moment-solvents, and cross-linked dielectric films. [12,13] Polymeric dielectric materials are an alternative to inorganic oxide-based gate dielectrics in OFETs. [14] The major advantage of polymer gate dielectrics is that thin films can be formed on any substrate through relatively simple solution processing techniques, which is essential for reduced cost for large area fabrication.…”

Section: Introductionmentioning

confidence: 99%

“…Hence, research in this direction is focused on the usage of high‐k dielectric materials, bilayer and hybrid (organic–inorganic) dielectric layer structure, use of high dipole moment‐solvents, and cross‐linked dielectric films. [ 12,13 ]…”

Section: Introductionmentioning

confidence: 99%

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

Rajeev

Pillai

Nunzi

et al. 2021

Macro Materials & Eng

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The semiconductor/dielectric interface controls the performance of organic field-effect transistors (OFETs). Herein, the influence of both the molecular weight and the polarity of the solvent of a poly(methyl methacrylate) (PMMA)-based gate dielectric on the performance of pentacene OFETs is systematically investigated, by studying surface energy, surface roughness, morphology, leakage current, and capacitance of the dielectric. Various existing views on the role of the surface energy are considered while deriving a correlation. Larger pentacene grains are observed when the film is grown on high molecular weight-PMMA films cast from high dipole moment-solvent. The electrical properties of the corresponding OFETs show great improvement compared to those of OFETs fabricated with low molecular weight-PMMA film as the gate dielectric, irrespective of the solvent. The authors attribute this enhanced performance to the increased surface energy of the polymeric dielectric which turns out to be a strong function of its molecular weight and the dipole moment of the solvent. Bias-stress measurements on the OFETs confirm this correlation.

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Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

Cited by 9 publications

References 39 publications

High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics

High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics

A Sub‐20 nm Organic/Inorganic Hybrid Dielectric for Ultralow‐Power Organic Thin‐Film Transistor (OTFT) With Enhanced Operational Stability

Influence of Polymer Gate Dielectric on Organic Field‐Effect Transistors: Interdependence of Molecular Weight, Solvent Polarity, and Surface Energy—A Case Study with PMMA and Pentacene

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