High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics

Abstract

Rare earth metal oxides (REOs) represent promising gate dielectric materials for field-effect transistors due to their high dielectric constants required for suppressing leakage currents in devices. In this paper, we present an approach to deposition of uniform REO gate dielectric coatings by oxidation of thin rare earth metal films in air at relatively low temperatures (100–250 °C). The proposed methodology was extensively explored in organic field-effect transistors (OFETs) using five benchmark organic semiconductors and six REOs as gate dielectrics. It was shown that OFETs with the REO gate dielectrics deliver on average considerably better characteristics compared to the reference devices using electrochemically grown aluminum oxide dielectric (AlOx). OFETs on a flexible plastic substrate were demonstrated, which makes this approach very attractive for developing flexible and wearable electronic devices with improved performance.

Surface treatments on concrete: an overview on organic, inorganic and nano-based coatings and an outlook about surface modification by rare-earth oxides

“…Metal atoms in REOs have an electronic structure in which the vacant 4f orbitals are shielded from interactions with the environment by the full octet of electrons in the 5s 2 p 6 outer shell. 218,219 Consequently, these atoms would be less apt to exchange electrons and not form a hydrogen bond with the water molecules at the interface. Therefore, it should be possible to dope cementbound materials with REOs to achieve hydrophobic wetting properties.…”

Study on annealing effect of Ti-doped Gd2O3 films for high k dielectrics

“…The gate dielectric of metal-oxide-semiconductor field effect transistors (MOSFETs) is also becoming thinner and approaching the physical limit, so there is an urgent need for new gate dielectric material candidates [1,2]. In recent years, rare earth oxides (REOs) have garnered increasing interest as high dielectric constant (high k) gate dielectrics for various applications, owing to their significant k value, wide band gap value, and small leakage current density [3]. Out of all the REOs, Gd 2 O 3 shows significant strengths in terms of its advantageous characteristics, including a considerable band gap, excellent chemical and thermal stability, as well as the capability to withstand high crystal temperatures exceeding 1000°C.…”

Effect of Annealing Temperature on the Structure and Properties of La2O3 High-K Gate Dielectric Films Prepared by the Sol-Gel Method

“…Therefore, researchers have chosen high-k materials to replace SiO 2 as the gate material of CMOS devices to address the issues of the charge tunneling effect brought about by the development of the technology [7][8][9]. In addition to needing high k values, high-k materials used as gate dielectrics in CMOS devices need to meet the following requirements: (1) moderate bandgap width (E g ), conduction band offset (∆E c ), and valence band offset (∆E v ) [10]; (2) the high-k gate dielectric thin film should have a single crystal or amorphous morphology [11,12]; (3) good thermal stability between the substrate and the high-k dielectric material [13]. Among them, silicon oxynitride (SiO x N y ) is one of the earliest high-k gate dielectric materials that have been studied.…”