Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics

Jung, Soon‐Won; Baeg, Kang‐Jun; Yoon, Sung-Min; You, In–Kyu; Lee, Jong Keun; Youngsoon, Kim; Noh, Yong‐Young

doi:10.1063/1.3511697

Cited by 34 publications

(32 citation statements)

References 17 publications

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“…As can be seen in figure, we could obtain sufficiently good device performances, in which a carrier mobility, on/off ratio, and subthreshold swing (SS) were as high as 5 Â 10 À2 cm 2 V À1 s À1 , 7.5 Â 10 3 , 2.5 V/decade, respectively. Considering that the most organic transistors using an F8T2 channel were reported to have a l sat of 1 Â 10 À2 cm 2 V À1 s À1 [19], the obtained device characteristics were sufficiently encouraging. Clockwise hysteresis obtained in each transfer curve originated from the ferroelectric field effect.…”

Section: Organic Ferroelectric Transistor Characteristicsmentioning

confidence: 64%

“…A organic semiconductor F8T2 (American Dye Source, Inc.) was dissolved in anhydrous xylene (0.7 wt.%) and filtered with a PTFE syringe filter to remove impurities [18][19][20]. F8T2 films were annealed at 100°C for 30 min to remove the solvent after spinning (2000 rpm, 1 min) in a glove box with low oxygen and moisture levels (<5 ppm).…”

Section: Fabrication Of Organic Ferroelectric Memory Devices On Stretmentioning

confidence: 99%

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Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

Jung

Choi

Koo

et al. 2015

Organic Electronics

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Section: Organic Ferroelectric Transistor Characteristicsmentioning

confidence: 64%

Section: Fabrication Of Organic Ferroelectric Memory Devices On Stretmentioning

confidence: 99%

Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

Jung

Choi

Koo

et al. 2015

Organic Electronics

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“…As shown in Figure , there have been a variety of approaches to increase C i , such as the use of relaxor high‐ k polymer dielectrics,194 high‐ k polymer dielectric blends,195–197 cross‐linked thin gate dielectrics,140, 198, 199 self‐assembled monolayers (SAMs)113 or self‐assembled nano‐dielectrics (SANDs),198, 200 organic‐inorganic hybrid dielectrics,201 and ion‐gels or electrolyte gates 139, 194, 202–206. Recent advances in the development of high‐capacitance dielectrics can be found in comprehensive reviews by Facchetti et al190, 207 All these approaches, i.e.…”

Section: Strategies For High‐speed Complementary Circuits Using Pomentioning

confidence: 99%

“…The high‐ k polymer P(VDF‐TrFE) shows ferroelectric memory behaviour (large bias hysteresis in the transfer plots) attributed to strong dipolar polarization in a crystalline β ‐phase of the polymer film. Therefore, the P(VDF‐TrFE) was mixed with PMMA, an amorphous polymer, to reduce the amount of ferroelectric crystalline phase formed, thus avoiding hysteresis in the device while profiting from an overall increased k 197. Moreover, Baeg et al .…”

Section: Strategies For High‐speed Complementary Circuits Using Pomentioning

confidence: 99%

Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors

2013

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For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order t...

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“…As gate dielectrics for the OTFTs, a P(VDF-TrFE):PMMA blended film was used at a 7:3 blend ratio. 12 A blended thin film was formed through conventional spin-coating at 2000 rpm and cured at 80 • C for 1 h in a nitrogen-purged glove box. The resulting film thickness was approximately 400 nm.…”

mentioning

confidence: 99%

Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures

Jung

Choi

Koo

et al. 2014

ECS Solid State Letters

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We demonstrate stretchable organic thin-film transistors (OTFTs) on a polyimide stiff-island/elastomer substrate. All processes are performed entirely at elastomer-compatible temperatures. We confirm the basic properties of the poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] with a poly(methyl methacrylate) (PMMA) blended film on the elastomer substrate and evaluate the characteristics of the fabricated stretchable OTFTs. A field-effect mobility of 3.4 × 10 −3 cm 2 V −1 s −1 , an I on /I off ratio greater than 10 3 , a subthreshold voltage swing of 12.5 V/decade, and a gate leakage current of 10 −10 A were obtained. The endurable maximum strain was approximately 50% for the OTFTs without degrading the field-effect mobility formed on the elastomers.The increasing need for flexible and stretchable circuitries, flexible and wearable displays, soft and human-friendly devices, has increased the industrial importance of portable and flexible devices. 1,2 As a result, the future development of electronics is expected to incorporate multifunctional electronic systems on the human body or clothing, requiring stable device performance under conditions of high strain and extreme body motion such as bending, folding, twisting, compressing, and stretching. 3 One of the key technologies toward the realization of these ultimate goals is the development of transistors and circuits that afford arbitrary form factors. 4 In particular, transistors that can stretch are the most essential component of stretchable electronics. Thin-film transistors (TFTs) are generally composed of gate stacks using metals and oxides, which are extremely brittle and fracture easily upon small mechanical deformation. Silicon integrated circuits are made of stiff active device films that fracture under a tensile strain of 1%. 5 Single-crystal gold films also rupture under a tensile strain of 1-1.5%. 6 To solve these problems, a few studies have focused on the fabrication of a stiff platform on elastomer substrates. 7-9 For example, diamond-like carbon islands on polydimethysiloxane (PDMS) substrate remain intact, even under 25% tensile strain. 7 Graz et al. reported a silicone substrate with in-situ strain relief for stretchable TFTs. Vacuum-processed pentacene transistors sustain an applied strain up to 13% without electrical degradation and mechanical fracture. 4 In this paper, we propose new stiff-island structures that act as a platform for stretchable electronic devices with high stretchability (approximately 50%). The stiff islands are defined by conventional photolithography on a stress-free elastomeric substrate. Thin-film islands within a stiff region are fabricated on an elastomeric substrate, and electronic devices are fabricated on these stiff islands. When the substrate is stretched, the deformation is mainly accommodated by the substrate, and the stiff islands and electronic devices experience relatively small strains. The stretchable OTFTs are fabricated onto polyimide (PI) stiff-island structures on elastomer substrates using a l...

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Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics

Cited by 34 publications

References 17 publications

Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors

Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures

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