Low voltage MOSFET optimized for low V&lt;inf&gt;DS&lt;/inf&gt; transient voltages

Rutter, P.; Peake, S.T.; Elford, A.

doi:10.1109/ispsd.2013.6694402

Cited by 5 publications

(9 citation statements)

References 8 publications

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“…The relative positive potential of the body to the 'source' serves to reduce the threshold voltage of the device, whilst the positive gate voltage can result in the channel turning on. Exploiting this phenomenon can result in body diode conduction comprising only majority carriers eliminating stored charge losses [44].…”

Section: Diode Behaviourmentioning

confidence: 99%

“…RESURF devices rely on depleting the drift region quickly with drain‐source capacitors (which is a p–n junction in a superjunction and a metal‐oxide‐semiconductor capacitor in a shielded‐gate structure). This results in a large non‐linear capacitive behaviour with drain voltage, which can result in large voltage overshoots that can be more than three times the conversion voltage [44]. These large overshoots can cause the device to go into an avalanche and in some circumstances can damage other components such as gate drivers.…”

Section: Silicon Performancementioning

confidence: 99%

“…These large overshoots can cause the device to go into an avalanche and in some circumstances can damage other components such as gate drivers. Solutions generally involve damping the oscillations and improving the non‐linearity of the output capacitance [44]. In shielded‐gate structures, adding resistance to the bottom source connected terminal is advantageous [45, 46].…”

Section: Silicon Performancementioning

confidence: 99%

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Considerations in the design of a low‐voltage power MOSFET technology

Rutter¹

2019

IET Power Electronics

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Discrete low-voltage power metal-oxide-semiconductor field effect transistors are used in a wide variety of applications with each application relying on different aspects of device behaviour. The conflicting requirements of these applications along with constraints such as legislation, industrial base, and intellectual property have resulted in a diverse array of technologies available in the market. This study outlines the many considerations that are faced when designing a highperformance silicon power MOSFET technology contrasting the trade-offs involved as factors such as on-state resistance, switching performance, reliability, and robustness in the application are optimised. 3 Intellectual property There are ∼3000 granted US patents relating to vertical doublediffused metal-oxide-semiconductor (DMOS) devices with a trench gate (classification H01 29/7813) with the number increasing at about 300 per year. In such a fiercely competitive market, protecting intellectual property is crucial. Consideration of the

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Section: Diode Behaviourmentioning

confidence: 99%

Section: Silicon Performancementioning

confidence: 99%

Section: Silicon Performancementioning

confidence: 99%

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Considerations in the design of a low‐voltage power MOSFET technology

Rutter¹

2019

IET Power Electronics

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“…The phenomenon can be interpreted as an equivalent series resistance (R oss ) appearing in series to the output capacitance of the devices (C oss ) during the resonant transitions [9][10][11][12][13][14][15][16]. However, there are no similar reports about the soft-switching loss contribution of the secondary side low-voltage (LV) rectifiers, even though the most mature technology for the LV secondary side rectifiers is the Silicon (Si) Trench MOSFET with shield-plate [17][18][19][20][21], and it is known that in their construction a series resistance appears with the output capacitance [22][23][24].…”

Section: Introductionmentioning

confidence: 99%

On the Practical Evaluation of the Switching Loss in the Secondary Side Rectifiers of LLC Converters

et al. 2021

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The switching loss of the secondary side rectifiers in LLC resonant converters can have a noticeable impact on the overall efficiency of the complete power supply and constrain the upper limit of the optimum switching frequencies of the converter. Two are the main contributions to the switching loss in the secondary side rectifiers: on the one hand, the reverse recovery loss (Qrr), most noticeably while operating above the series resonant frequency; and on the other hand, the output capacitance (Coss) hysteresis loss, not previously reported elsewhere, but present in all the operating modes of the converter (under and above the series resonant frequency). In this paper, a new technique is proposed for the measurement of the switching losses in the rectifiers of the LLC and other isolated converters. Moreover, two new circuits are introduced for the isolation and measurement of the Coss hysteresis loss, which can be applied to both high-voltage and low-voltage semiconductor devices. Finally, the analysis is experimentally demonstrated, characterizing the switching loss of the rectifiers in a 3 kW LLC converter (410 V input to 50 V output). Furthermore, the Coss hysteresis loss of several high-voltage and low-voltage devices is experimentally verified in the newly proposed measurement circuits.

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“…For LV-MOSFETs, historically, planar gate doublediffused MOSFETs (D-MOSFETs) and trench gate MOSFETs (U-MOSFETs) were developed in the 1970s and the 1980s, respectively, 1) and they are currently used as matured low-cost devices. As great advancements of LV-MOSFET in terms of performance, field-plate trench MOSFETs (FP-MOSFETs) [2][3][4][5][6][7][8][9][10] and superjunction trench MOSFETs (SJ-MOSFETs) [11][12][13][14][15][16][17] were devised in the 1990s and commercialized in the 2000s. In both types of MOSFETs, specific on-resistance (R ON A) could be drastically reduced with a high breakdown voltage (V B ) maintained.…”

Section: Introductionmentioning

confidence: 99%

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

Kobayashi

Sudo

Omura

2018

Jpn. J. Appl. Phys.

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Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate-drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss ), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss ) and stored energy (E oss ) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

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Low voltage MOSFET optimized for low V<inf>DS</inf> transient voltages

Cited by 5 publications

References 8 publications

Considerations in the design of a low‐voltage power MOSFET technology

Considerations in the design of a low‐voltage power MOSFET technology

On the Practical Evaluation of the Switching Loss in the Secondary Side Rectifiers of LLC Converters

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

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