2012
DOI: 10.1143/jjap.51.042203
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Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Abstract: We have demonstrated a low-voltage Mach–Zehnder (MZ) modulator with a multiple InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) for 1.55 µm wavelength. The FACQW is expected to exhibit a large electrorefractive index change owing to its unique behavior of the quantum-confined Stark effect. The MZ modulator with ridge waveguides was fabricated by molecular beam epitaxy and wet etching. The product of a half-wave voltage and a phase shifter length (V π L) was a… Show more

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Cited by 16 publications
(5 citation statements)
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“…The discrepancy between the theoretical electric field and experimental voltage may come from unintentional background doping in the intrinsic region. Background doping results in non-uniform applied electric field for multiple quantum well structure even with very small doping level of 10 15 cm -3 [28]. Also, especially for 3 and 4 V, although the bulk absorption increase for larger photon energy can be seen for experimental spectra, it is not taken into account in our simulation.…”
Section: Qcse Of Ge/sige Quantum Wellsmentioning
confidence: 98%
“…The discrepancy between the theoretical electric field and experimental voltage may come from unintentional background doping in the intrinsic region. Background doping results in non-uniform applied electric field for multiple quantum well structure even with very small doping level of 10 15 cm -3 [28]. Also, especially for 3 and 4 V, although the bulk absorption increase for larger photon energy can be seen for experimental spectra, it is not taken into account in our simulation.…”
Section: Qcse Of Ge/sige Quantum Wellsmentioning
confidence: 98%
“…As a CQW, we use an InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW). 15,16) Owing to its unique characteristics of the quantum-confined Stark effect, the FACQW exhibits a large electrorefractive index change even in the transparent wavelength region far from the absorption edge. At cryogenic temperature, the large electric-field induced change in the refractive index is expected to be enhanced.…”
Section: Optical Interconnection Systems For Superconducting Integrat...mentioning
confidence: 99%
“…An electrorefractive index change of as much as 4:4 Â 10 À3 at 2.4 V was also experimentally obtained in a multiple FACQW. 36) That is, an electrorefractive index change of more than 0.003 is expected when we consider the filling factor of the FACQW in the core layer to be 0.7. Therefore, in the following discussion, we assume that a refractive index change of as much as 0.003 can be obtained.…”
Section: Structure Of Core Layermentioning
confidence: 99%