Low-voltage low-power accurate CMOS V/sub T/ extractor

Fikos, G.; Siskos, S.

doi:10.1109/82.943334

Cited by 18 publications

(9 citation statements)

References 10 publications

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“…However, the extractor circuit is designed to extract the transistors' threshold voltage instead of the temperaturecompensated current reference. The extractor principle is utilizing the quadratic strong inversion current model [19]. The relationship can be expressed as [8]- [10], [14] …”

Section: A Linear Voltage Associated With Threshold Voltagementioning

confidence: 99%

A CMOS Voltage Reference Based on Mutual Compensation of Vtn and Vtp

Zhou

Zhu

Shi

et al. 2012

IEEE Trans. Circuits Syst. II

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A novel temperature-stable nonbandgap voltage reference, which is compatible with standard CMOS technology, is presented in this brief. No diodes or parasitic bipolar transistors are used. Based on mutual temperature compensation of the threshold voltages of nMOS and pMOS transistors, a temperature-insensitive voltage reference with significant reduction in temperature dependence of mobility is achieved without using subthreshold characteristics. The problem of a fixed voltage reference value is also avoided by different parameter design. Experimental results of the proposed voltage reference implemented with a 0.35-μm CMOS process demonstrate that the output of the voltage reference is 847.5 mV, a temperature coefficient of 11.8 ppm/ • C with a temperature range from 0 • C to 130 • C is obtained at 3-V power supply, a power-supply noise attenuation of 72 dB is achieved without any filtering capacitor, and the line regulation is better than 0.185 mV/V from 1.8-V to 4.5-V supply voltage dissipating a maximum supply current of 8 μA. The active area of the presented voltage reference is 90 μm × 120 μm.Index Terms-CMOS voltage reference, nonbandgap voltage reference, power-supply noise attenuation (PSNA) without filtering capacitor, temperature coefficient (TC), temperature compensation.

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Section: A Linear Voltage Associated With Threshold Voltagementioning

confidence: 99%

A CMOS Voltage Reference Based on Mutual Compensation of Vtn and Vtp

Zhou

Zhu

Shi

et al. 2012

IEEE Trans. Circuits Syst. II

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show abstract

“…For example, [7] uses a continu ous transistor model [8] and proposes a circuit based on the channel conductance-to-current ratio ( gch / id) methodology, requiring a good estimation of the specific current of the fabrication process to correctly bias the transistor. Still it is hard to make any fair comparison, since circuits from [2][3][4][5][6] are based on different definitions for VTO• We do not state that these solutions are not good but our topology is the only one that works in the n W range, being more interesting for low power applications.…”

Section: Introductionmentioning

confidence: 95%

“…A threshold voltage extractor is a circuit that ideally de livers the estimated VTO value as a voltage directly from its operational conditions, without parametric setups, curve fitting and/or any subsequent calculations. Through the years, many circuits have been proposed for this purpose [2], [3], [4], [5] and [6], but all of them are based on the strong inversion quadratic model for the drain current. In a few topologies another inversion regime is used for the MOSFET VTO extraction.…”

Section: Introductionmentioning

confidence: 99%

Sub-1 V Supply Nano-Watt MOSFET-Only Threshold Voltage Extractor Circuit

Mattia

Klimach

Bampi

2014

Proceedings of the 27th Symposium on Integrated Circuits and Systems Design

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This work presents a self-biased MOSFET threshold volt age VTO extractor circuit. Its working principle is based on a current-voltage relationship derived from a continuous phys ical model. The model is valid for any operating condition, from weak to strong inversion, and under triode or satu ration regimes. The circuit is MOSFET-only (can be im plemented in any standard digital process) , and it operates with a power supply of less than 1 V, consuming tenths of nW. Post-layout simulation results show that the extracted VTO has an error inferior to 1.3%, when compared to the theoretical value, for a -40 to 125°C temperature range. We present variability results from Monte Carlo simulations that support the extracting behavior of the circuit with good ac curacy. The occupied silicon area is 0.0076 mm 2 in a 0.13p,m CMOS process.

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“…A test circuit is designed to bias the CUT, with the Vth derived from the DC current flowing out of the test circuit. Similarly, a study in [4] also presented a technique to extract Vth from MOSFETs, although using a somewhat different method. The designed test circuit, named the extracting block, uses feedback to extract Vth.…”

Section: Introductionmentioning

confidence: 96%

“…Research studies presented in [3], [4], and [5] reveals how Vth of MOSFETs can be extracted, measured, and compensated. The work in [3] simply evaluated Vth mismatch between 2 MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Analysis on the Effects of MOSFET Threshold Voltage Mismatch in CMOS Operational Amplifiers for RF Applications

Rahman

Kamisian

2006

2006 International RF and Microwave Conference

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CMOS Operational Amplifiers (Op Amps) are used in RF circuit blocks as low noise or power amplifiers. One of the critical issues in the performance and operation of these Op Amps is its threshold voltage (Vth) mismatch between adjacent MOSFET devices. Different Vth values between the Op Amps' input MOSFETs of the differential stage causes it to deviate in its output specification, which include among others, the AC and DC gain, bandwidth, and most notably, the offset voltage. First order analysis of offset voltage approximation is performed with 30% Vth variation, and the obtained result is verified through a BSIM3 MOSFET model, with parametric sweep SPICE simulation of a 2-stage large gain and bandwidth Op Amp. The study is found to be crucial in order to develop a technique that could detect Vth variation of transistors, and compensate Op Amps output specifications accordingly.

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Low-voltage low-power accurate CMOS V/sub T/ extractor

Cited by 18 publications

References 10 publications

A CMOS Voltage Reference Based on Mutual Compensation of Vtn and Vtp

A CMOS Voltage Reference Based on Mutual Compensation of Vtn and Vtp

Sub-1 V Supply Nano-Watt MOSFET-Only Threshold Voltage Extractor Circuit

Analysis on the Effects of MOSFET Threshold Voltage Mismatch in CMOS Operational Amplifiers for RF Applications

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