Low-Voltage, High-Performance Flexible Organic Field-Effect Transistors Based on Ultrathin Single-Crystal Microribbons

Chen, Hongming; Xing, Xing; Zhu, Ming‐Qiang; Cao, Jupeng; Ali, Muhammad Umair; Li, Aiyuan; He, Yaowu; Meng, Hong

doi:10.1021/acsami.9b13871

Cited by 20 publications

(20 citation statements)

References 49 publications

(71 reference statements)

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“…The higher saturated carrier mobility based on C‐PVA dielectric layer at first sweep was mainly caused by a better crystallization characteristic and a larger grain size in C8‐BTBT thin films, which indicates better intrinsic carrier transport in C8‐BTBT based on C‐PVA dielectric layer (Figure S5, Supporting Information). However, the device based on CYTOP/C‐PVA layer shows a lower threshold voltage, which results in a higher reliable factor r value (Table S2, Supporting Information) . Therefore, it shows that device D has a similar effective mobility ( µ eff ) of about 6 cm 2 V −1 s −1 to the first sweep of device C, detailed comparison can be seen in Table S2 (Supporting Information).…”

Section: Resultsmentioning

confidence: 98%

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Chen

Xing

Miao

et al. 2020

Advanced Optical Materials

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In this work, the multilayer organic light emitting transistors (OLETs) based on high‐k polymer crosslinked poly(vinyl alcohol) (C‐PVA) as the dielectric layer are studied. The devices show an excellent brightness of 14 500 cd m−2 and a record breaking external quantum efficiency (EQE) of about 9.0% in inert atmosphere. The use of perfluoro(1‐butenyl vinyl ether) polymer (CYTOP) modified C‐PVA as a hydrophobic dielectric affords OLETs with good stability, displaying a maximum brightness of 13 400 cd m−2 and EQE of 7.31% in ambient conditions with high humidity (relative humidity RH = 70%). Furthermore, the flexible OLETs based on CYTOP/C‐PVA dielectric layer show a brightness of 8300 cd m−2 and a peak EQE at 9.01%, which is the first reported flexible OLET with >500 cd m−2 brightness. The excellent OLET device performance is ascribed to the excellent hole transport structure, high efficiency of guest–host system, and the better carrier balance in the emitting layer, which could be a practical strategy to develop high‐performance flexible OLETs. It is proven for the first time that OLETs could achieve such high EQE and brightness, even for flexible OLETs, paving the way for their future application in industry.

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Section: Resultsmentioning

confidence: 98%

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Chen

Xing

Miao

et al. 2020

Advanced Optical Materials

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“…Notably, the SS and I on / I off numbers were even better than those on Si substrates, which is perhaps because the oxygen-rich ITO could also partially oxidize the hydroxyls and therefore reduced the charge trap density and suppressed the leakage pathway [ 48 ]. As a result, a very high saturation regime mobility ( μ sat ) of 30.2 ± 4.6 cm 2 V −1 s −1 and a high effective mobility ( μ eff ) of 13.8 ± 2.1 cm 2 V −1 s −1 were obtained, and these numbers considerably outperformed all previously reported flexible OFET devices, except for a recent work [ 49 ] which used single-crystal C8-BTBT as the organic semiconductor and reported a comparable carrier mobility (33.4 and 13.3 cm 2 V −1 s −1 for μ sat and μ eff , respectively) (Table S4 ). Given that the single crystal is considered to be the intrinsic limit for enhancing the mobility, our outcome relying on the improvement of the dielectric layer is quite remarkable in approaching to this limit.…”

Section: Resultsmentioning

confidence: 70%

Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid

et al. 2020

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Organic field-effect transistors (OFETs) are of the core units in organic electronic circuits, and the performance of OFETs replies critically on the properties of their dielectric layers. Owing to the intrinsic flexibility and natural compatibility with other organic components, organic polymers, such as poly(vinyl alcohol) (PVA), have emerged as highly interesting dielectric materials for OFETs. However, unsatisfactory issues, such as hysteresis, high subthreshold swing, and low effective carrier mobility, still considerably limit the practical applications of the polymer-dielectric OFETs for high-speed, low-voltage flexible organic circuits. This work develops a new approach of using supercritical CO2 fluid (SCCO2) treatment on PVA dielectrics to achieve remarkably high-performance polymer-dielectric OFETs. The SCCO2 treatment is able to completely eliminate the hysteresis in the transfer characteristics of OFETs, and it can also significantly reduce the device subthreshold slope to 0.25 V/dec and enhance the saturation regime carrier mobility to 30.2 cm2 V−1 s−1, of which both the numbers are remarkable for flexible polymer-dielectric OFETs. It is further demonstrated that, coupling with an organic light-emitting diode (OLED), the SCCO2-treated OFET is able to function very well under fast switching speed, which indicates that an excellent switching behavior of polymer-dielectric OFETs can be enabled by this SCCO2 approach. Considering the broad and essential applications of OFETs, we envision that this SCCO2 technology will have a very broad spectrum of applications for organic electronics, especially for high refresh rate and low-voltage flexible display devices.

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“…[ 57 ] The carrier mobility quantifies how efficiently the charge carries move in the semiconductor and it is calculated, in the saturation region (| V ds | > | V gs ‐ V th | > 0), from Equation (), [ 58 ] where I ds , w , and l are drain‐source current, channel width, and channel length, respectively:

\begin{matrix} I_{ds} = \frac{μ w C_{normali} {(V_{gs} - V_{th})}^{2}}{2 l} \end{matrix}

C i is the capacitance per unit area of the gate dielectric and determines the driving voltage of the transistor, which directly affects the LET power consumption. C i depends on the dielectric constant ( k ) and the dielectric thickness ( d ) as in Equation (): [ 59 ]

\begin{matrix} C_{normali} = \frac{k ε_{0}}{d} \end{matrix}

…”

Section: Basics Of Multi‐layer Letsmentioning

confidence: 99%

Recent Advances in Multi‐Layer Light‐Emitting Heterostructure Transistors

Chen

Huang

Marks

et al. 2021

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Light‐emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple‐layer heterostructures in the charge‐carrying/light‐emitting LET channel versus the best‐reported performance in single active layer LETs, rendering multi‐layer LETs promising candidates for next‐generation display technologies. In this review, the fundamental structures and working principles of multi‐layer heterostructure LETs are introduced. Next, developments in multi‐layer LETs are discussed based on co‐planar LETs, non‐planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.

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Low-Voltage, High-Performance Flexible Organic Field-Effect Transistors Based on Ultrathin Single-Crystal Microribbons

Cited by 20 publications

References 49 publications

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Highly Efficient Flexible Organic Light Emitting Transistor Based on High‐k Polymer Gate Dielectric

Hysteresis-Free, High-Performance Polymer-Dielectric Organic Field-Effect Transistors Enabled by Supercritical Fluid

Recent Advances in Multi‐Layer Light‐Emitting Heterostructure Transistors

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