Low-voltage ferroelectric–paraelectric superlattices as gate materials for field-effect transistors

Misirlioglu, I. B.; Şen, Cengiz; Kesim, Mehmet; Alpay, S. P.

doi:10.1007/s10853-015-9301-9

Cited by 9 publications

(5 citation statements)

References 70 publications

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“…The insulating buffer layer thickness is usually designed to optimize capacitance matching 87,88 ; however, the optimization of this para meter is typically based on a model assuming homogen eous polarization, which is not valid for the multidomain case, in which the NC in the ferroelectric is approx imately independent of the dielectric layer thickness above a certain value. Thus, further device modelling that explicitly considers multidomain gates with mobile domain walls is required 89,90 .…”

Section: Device Implementation Work On Ferroelectric Fetsmentioning

confidence: 99%

Ferroelectric negative capacitance

Íñiguez¹,

Zubko²,

et al. 2019

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, which needs to be positive owing to thermodynamic stability. However, this relation is also true if one of the local effective capacitances, for example, C 1 , is negative, as long as the condition C ≥ 0 is fulfilled. In this scenario, the application of an external voltage V results in V int = V(1 + C 2 /C 1) −1 at the interface between the two dielectrics, such that V int /V > 1 if C 1 < 0. That is, NC of one part of the system enables amplification of the voltage at the interface (fig. 1b). Contrary to the usual decrease in the overall capacitance when a regular (positive) capacitance is added in series, the addition of

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Section: Device Implementation Work On Ferroelectric Fetsmentioning

confidence: 99%

Ferroelectric negative capacitance

Íñiguez¹,

Zubko²,

et al. 2019

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“…We use the word “paradoxical” here as the depolarization fields naturally emanating from the mechanism prescribed above have long been perceived as detrimental in the development of FE-gated MOSFET structures designed to possess a memory − where the memory function is basically fulfilled by the degenerate polarization states the FE gate can take on, allowing for binary data storage. In fact, artificial superlattices composed of repeating units of an FE/DE stack were initially considered as high- k structures for capacitors integrable into SC-based devices or as tunable layers that tailor the depolarization fields. − In this picture, FE/DE layer thickness ratios become the main foothold of controlling the polar to nonpolar transition temperature of the stack. If the layer ratios are chosen carefully for a background misfit induced by the substrate, the transition temperature of the superlattice can be engineered so as to give a maximal dielectric response or even a stable single-domain state. , The sensitivity of these structures to the mechanical/electrostatic boundary conditions (BCs) and layer sequence relative to the electrodes have been shown explicitly in earlier analytical works. , Apart from all of the aforementioned data, the polarization and the internal fields inside the FE layers when interfacing a DE are long predicted to be antiparallel, which conforms well to the recently and frequently mentioned negative capacitance (NC) phenomena.…”

Section: Introductionmentioning

confidence: 99%

Weak Dependence of Voltage Amplification in a Semiconductor Channel on Strain State and Thickness of a Multidomain Ferroelectric in a Bilayer Gate

Misirlioglu,

Yapici,

Sendur

et al. 2023

ACS Appl. Electron. Mater.

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Ferroelectric/dielectric layered stacks are of special interest as gate oxides in the pursuit of designing low-power transistors, where the electrostatics of such stacks are thought to provide a means to allow for voltage amplification in the semiconductor channel. Strain and thickness dependence of the response of such a gate stack in relation to voltage amplification in a semiconductor channel becomes important to identify, which is what we study in this work using a thermodynamic approach. For a ferroelectric multidomain state as the stable phase in the stack, our findings show that a limited magnitude of voltage amplification appears to be feasible. Voltage amplification at the semiconductor surface is computed to hardly exceed 1.2 in thick bilayers (40 nm) for strains stabilizing the multidomain state and attains even less than this value for the thinner stacks.

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“…This is followed by three theoretical/computational studies. Misirlioglu et al report a thermodynamic modeling study which demonstrates that ferroelectric-paraelectric superlattice heterostructures can exhibit on/off switching properties at much lower bias voltages than in a linear high dielectric constant gate [45]. They propose that such constructs can be employed as gate materials for field effect transistors.…”

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confidence: 99%

“…Using a similar methodology, Sun et al address the question ''Are ferroelectric multilayers capacitors in series?'' and demonstrate that the answer is ''No'' except in cases where both ferroelectrics are dielectrics, or the individual layers are screened from one another [46]. In the fourth paper, Chen et al use density functional theory computations to calculate the barriers to charge injection at metal/polyethylene interfaces [47].…”

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confidence: 99%

Preface to the 50th anniversary issue of the Journal of Materials Science

Aindow

2015

J Mater Sci

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In his book ''The Coming of Materials Science'' [1], the late Professor Robert Wolfgang Cahn FRS documented the rise of Materials Science as a distinct discipline from its roots in solid-state physics, metallurgy, polymer chemistry, inorganic chemistry, mineralogy, glass, and ceramic technology. The development of the discipline was a process in which he was intimately involved from 1942 when he enrolled at Trinity College, Cambridge to read Metallurgy, to his death from leukemia in 2007. His technical contributions were remarkably diverse, spanning such areas as: defects and deformation mechanisms, crystal growth, recrystallization, intermetallic compounds, and metallic glasses. It was these broad interests that led him to become such a staunch advocate for Materials Science as a discipline. Another of his passions was scientific editing, and he is remembered as much for his editing of several major journals and books as he is for his scientific research work. In 1964, Robert Cahn was invited by the publishers Chapman and Hall to establish the Journal of Materials Science as the first broad-spectrum Materials Science journal. As Chairman of Editors, he recruited a group of Editors with complementary areas of expertise, gave them independent powers of decision on submitted papers, and encouraged them to be pro-active in soliciting papers from key researchers on novel topics. This helped to ensure that the journal fulfilled its mission of being a broad-spectrum inclusive periodical that brought together work on different classes of materials using a wide variety of different experimental and theoretical approaches. The first issue appeared in April of 1966, and the Journal grew rapidly over the next few years to become a major international forum for research in Materials Science. In Robert Cahn's memoirs [2], he said that the years he devoted to creating the Journal of Materials Science represented his single most important editorial contribution to the field. Over the last five decades, there have been many changes to the Journal, to the community that it serves, and to the field as a whole. The publishers have undergone several reorganizations and changes of ownership, and are now part of the Springer Nature group. Specialist sister journals have been spun off in the areas of Materials in Electronics and Materials in Medicine, while others such as Interface Science have been incorporated into the main journal. The community has broadened to encompass more biologists, chemists, and physicists due to developments in, for example, tissue engineering, nanostructured catalysts, and functional oxides, respectively. There have also been dramatic changes in the synthesis, processing, characterization, and computational modeling techniques available to materials scientists, and these advances have had a revolutionary effect on research directions in the field. Throughout, the Editors have maintained an open and flexible definition of Materials Science so that the Journal remains true to Robert Cahn's original vision of ...

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Low-voltage ferroelectric–paraelectric superlattices as gate materials for field-effect transistors

Cited by 9 publications

References 70 publications

Ferroelectric negative capacitance

Ferroelectric negative capacitance

Weak Dependence of Voltage Amplification in a Semiconductor Channel on Strain State and Thickness of a Multidomain Ferroelectric in a Bilayer Gate

Preface to the 50th anniversary issue of the Journal of Materials Science

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