Low voltage current reference circuit with low temperature coefficient

Amaljith, M. K.; Rao, G. Hanumantha; Rekha, S.

doi:10.1109/discover.2018.8674109

Cited by 9 publications

(6 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Traditionally, a beta‐multiplier reference (BMR) circuit is used for generation of reference voltage and current 7,11 . However, to generate a current as low as 1 nA, the traditional circuit would require a degeneration resistor of the order of 70MΩ through 100 MΩ 19 .…”

Section: Theoretical Formulation and Design Processmentioning

confidence: 99%

“…Hence, the temperature dependence of the reference current, I ref , is governed only by the temperature dependent factors, I on and I op (Equation (20)), where

I_{on} goodbreak= μ_{n} C_{ox} ((), η goodbreak- 1) U_{T}^{2},

and

I_{op} goodbreak= μ_{p} C_{ox} ((), η goodbreak- 1) U_{T}^{2} .

Here,

μ_{n}

and

μ_{p}

are the mobility of the carriers in the n ‐channel and p ‐channel MOS transistors, respectively, and

C_{ox}

is the gate oxide capacitance. Mobility is a temperature dependent parameter, which can be expressed as ( 8,11 )

μ_{x} goodbreak= μ_{x} ((), 0) {(\frac{T}{T_{0}})}^{- m},

where,

x

is n or p ,

μ_{x} ((), 0)

is the mobility at room temperature

T_{0}

and

m

is the mobility temperature exponent 8 having a value of 1.5, and

U_{T}^{2} goodbreak= {(\frac{kT}{q})}^{2},

where, k is the Boltzman's constant (1.38 × 10 −23 J/K), and q is the elementary charge of electron (1.6 × 10 −19 C), T is absolute temperature. So, Equation (25) depicts that the variation of thermal voltage is proportional to the absolute temperature (PTAT).…”

Section: Theoretical Formulation and Design Processmentioning

confidence: 99%

“…In Reference [6], the reference current is generated from a reference voltage derived from threshold voltage difference between a 3.3 V n‐channel MOS and a 1.8 V n‐channel MOS transistors, with a very low supply voltage of 0.7 V. The circuit achieves a line sensitivity of 0.027%/V with power consumption of 28 nW. The works reported in References [7‐15] have implemented Beta‐multiplier circuits for reference current generation, additionally incorporating complex circuitry to obtain the required response to the supply and temperature variation.…”

Section: Introductionmentioning

confidence: 99%

“…In the work described in Reference [16], the 142.5 nA reference current shows a line sensitivity of 1.45%/V percent with a very less temperature coefficient of 40 ppm/°C. The work reported in Reference [11] has a very large line sensitivity of 8.02%/V with a temperature coefficient of 186 ppm/°C. Reference [17] has developed 1 nA bias current through automatic calibration method from an ultra‐low power current generator.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A 588 nW, 1 nA current reference circuit with extremely low (0.002%/V) line sensitivity over a wide supply voltage range and low temperature coefficient

Mukherjee

Upadhyay

et al. 2022

Int J Numerical Modelling

View full text Add to dashboard Cite

A 1 nA current reference circuit is designed in semiconductor laboratory (SCL) 0.18 μm standard threshold voltage CMOS technology under 1.8 V power supply. The reference current is extremely immune to supply variation and shows a line sensitivity of 0.002%/V at post layout simulation level, over a wide range of supply variation from 0.5 V to 3.5 V. The line sensitivity is much smaller than any relevant data so far reported. In addition, it has a very low temperature coefficient of 214 ppm/°C over a temperature variation from −50°C to 50°C. The circuit consumes a total power of 588 nW. The reported results are also studied at various process corners and under variable process parameters like oxide thickness and threshold voltage of transistors. A satisfactory behaviour of the circuit is obtained in all cases. The accuracy of the simulation results is validated through quite close matching of the results with that obtained through rigorously developed theoretical models.

show abstract

Section: Theoretical Formulation and Design Processmentioning

confidence: 99%

“…Hence, the temperature dependence of the reference current, I ref , is governed only by the temperature dependent factors, I on and I op (Equation (20)), where

I_{on} goodbreak= μ_{n} C_{ox} ((), η goodbreak- 1) U_{T}^{2},

and

I_{op} goodbreak= μ_{p} C_{ox} ((), η goodbreak- 1) U_{T}^{2} .

Here,

μ_{n}

and

μ_{p}

are the mobility of the carriers in the n ‐channel and p ‐channel MOS transistors, respectively, and

C_{ox}

is the gate oxide capacitance. Mobility is a temperature dependent parameter, which can be expressed as ( 8,11 )

μ_{x} goodbreak= μ_{x} ((), 0) {(\frac{T}{T_{0}})}^{- m},

where,

x

is n or p ,

μ_{x} ((), 0)

is the mobility at room temperature

T_{0}

and

m

is the mobility temperature exponent 8 having a value of 1.5, and

U_{T}^{2} goodbreak= {(\frac{kT}{q})}^{2},

Section: Theoretical Formulation and Design Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A 588 nW, 1 nA current reference circuit with extremely low (0.002%/V) line sensitivity over a wide supply voltage range and low temperature coefficient

Mukherjee

Upadhyay

et al. 2022

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…Thus, their power consumptions are usually much higher than those implemented using "all" CMOS transistors working in subthreshold regions. [19][20][21][22][23][24] Even though subthreshold characteristics were employed, the resistors were still used to generate the current in the order of μA to 100 nA, 20,21,24) or the MOS transistor was biased at the triode region and acted as a resistor, which results in more than 200 nW of power consumption and fair temperature coefficients. 22) Some other literature 17,19,23) utilizes MOS transistors biased at the region of zero temperature coefficient to avoid the conventional resistors.…”

Section: Introductionmentioning

confidence: 99%

A gate leakage current based nano-ampere current reference generator using a dual threshold voltage 6-T voltage reference

Chang¹,

Tseng²,

Lin³

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

To realize nano-ampere current reference generator, a tunable 1.34 nA current reference generator is proposed by applying the reference voltage to a PMOSFET achieving low temperature coefficients (TCs). Unlike the conventional resistors occupying large die area, the area was significantly reduced by using the gate-leakage PMOSFET. Furthermore, the area-efficient reference voltage based on MOSFETs operated at subthreshold rather than the accurate but power- and area-hungry bandgap reference was utilized. To cope with process variations, the reference current can be trimmed by four switches and is easy to be replicated. The proposed current generator was designed and fabricated on the die area of 0.0175 mm^2 using 90 nm CMOS technology. The measured TC of the 308 mV voltage reference is 124 ppm/°C and the measured TC of the 1.34 nA current reference is 394 ppm/°C from 0°C to 120°C at a supply voltage of 0.75V.

show abstract

Time Constant Enhancement Technique for Low-Frequency Filters

Rao

Rekha

2019

Circuits Syst Signal Process

View full text Add to dashboard Cite

Low voltage current reference circuit with low temperature coefficient

Cited by 9 publications

References 9 publications

A 588 nW, 1 nA current reference circuit with extremely low (0.002%/V) line sensitivity over a wide supply voltage range and low temperature coefficient

A 588 nW, 1 nA current reference circuit with extremely low (0.002%/V) line sensitivity over a wide supply voltage range and low temperature coefficient

A gate leakage current based nano-ampere current reference generator using a dual threshold voltage 6-T voltage reference

Time Constant Enhancement Technique for Low-Frequency Filters

Contact Info

Product

Resources

About