Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

Highly controlled InGaAs(P)/InP MQW interfaces grown by MOVPE using TBA and TBP precursors

“…'l'hcse precursors are very attractive for suppressing the exchange or contamination of group V atoms at InGaAsP/InGaAsP MQW heterointerfaces. This approach has led to high performance 1.3p.m MQWLDs [8], [9].…”

MOCVD growth of III-V compounds for long wavelength optoelectronic devices

“…Therefore, search for substitutes for the toxic AsH 3 and PH 3 sources and the explosive H 2 carrier gas for MOCVD growth has been pursued in the past ten years [20][21][22]. Relevant researches have shown that organic compounds of these group-V elements, such as tertiary-butyl arsine (TBAs) and tertiary-butyl phosphine (TBP), have some crucial advantages: they are liquid phase in room temperature, they are safer due to their low vapor pressure and several orders of magnitude lower in toxicity than that of AsH 3 and PH 3 .…”

“…Lower growth temperature is useful for suppressing the diffusion of dopants in device structures where an abrupt doping profile is critical to the performance of the device [20] [21]. Low threshold current multiple quantum well (MQW) laser diode has been realized by MOCVD using TBAs and TBP [22]. But all these works, H 2 was still used as the carrier gas.…”