Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors

Chip-scale atomic devices

“…Because of the extremely small mode diameter (as low as several microns), the threshold currents of this type of laser can be very low, typically around 1 mA for commercial devices 81 and even lower for research devices. 82 This low threshold current means that, unlike edgeemitting lasers, a VCSEL can produce coherent light with only a few mW of electrical input power. The small cavity size (also only a few microns) implies that the laser can have a very high modulation efficiency, sometimes extending to near 10 GHz.…”

Strain in wet thermally oxidized square and circular mesas

“…[8][9][10] As demonstrated by Landesman et al, the oxidation process induces local strain in the GaAs cap layer at the oxide-AlAs interface. 11 Because of the reduced oxidation rate in the ͓011͔ direction, the volume contraction of the oxide will not be symmetric with respect to the center of the mesa.…”

“…This strain is believed to be the result of the volume contraction observed as the underlying AlAs layer is converted to oxide. [8][9][10] Because the measurements were taken from the ͑100͒ face, observation of the TO modes is forbidden. 11 Therefore, we are only concerned with the GaAs LO phonon.…”

10Gb/s transmission over 5km at 850nm using single-mode photonic crystal fiber, single-mode VCSEL, and Si-APD

“…PCF is also an intrinsically inexpensive transmission medium, because there is no need for expensive doping materials such as GeO 2 . In particular, VCSELs have a lot of advantages over edge emitting lasers including low threshold current, a single longitudinal mode and high density integration, due to their two dimensional structure and short cavity length [6,7]. AlGaAs quantum well based VCSELs at 850 nm have achieved higher efficiency, higher output power and larger modulation bandwidth, compared with InP based VCSELs at longer wavelength.…”