1993
DOI: 10.1063/1.109703
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Low threshold quasi-three-level 946 nm laser operation of an epitaxially grown Nd:Y3Al5O12 waveguide

Abstract: We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.

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Cited by 37 publications
(14 citation statements)
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“…Liquid phase epitaxy is the most powerful epitaxial technique for producing low-loss (o0.05 dB/cm) planar waveguides based on garnet thin films [3]. LPE method has been employed to grow Dy,Ga,Lu:YAG waveguide layers on /111S-oriented YAG substrates from a supersaturated, molten garnet-flux high-temperature solution.…”
Section: The Samplesmentioning
confidence: 99%
“…Liquid phase epitaxy is the most powerful epitaxial technique for producing low-loss (o0.05 dB/cm) planar waveguides based on garnet thin films [3]. LPE method has been employed to grow Dy,Ga,Lu:YAG waveguide layers on /111S-oriented YAG substrates from a supersaturated, molten garnet-flux high-temperature solution.…”
Section: The Samplesmentioning
confidence: 99%
“…i) According to [666], the real formula for the active crystalline layer is Y2.40Yb0.49Nd0.11Al4.84Ga0.16O12. j) According to [667], the active crystalline layer was co-doped with 12 at.% Ga 3+ and 35 at.% Lu 3+ ions. k) According to [675], the real formula for the active crystalline layer is Y1.25Ho0.1Er0.55Tm0.5Yb0.6Al5O12.…”
Section: Discussionmentioning
confidence: 99%
“…The main limitations of this method are the lack of accurate thickness control and the poor surface uniformity of the layer, which however, can be overcome by polishing. LPE has been extensively used for growth of oxide layers and for waveguide lasers in particular, early work focused on development of rare-earth doped garnet films [66,[68][69][70][71][72][73][74][75].…”
Section: Liquid Phase Epitaxy (Lpe)mentioning
confidence: 99%
“…The main limitations of this method are the lack of accurate thickness control and the poor surface uniformity of the layer, which however, can be overcome by polishing. LPE has been extensively used for growth of oxide layers and for waveguide lasers in particular, early work focused on development of rare-earth doped garnet films [66,[68][69][70][71][72][73][74][75].Research interest in recent years has shifted towards deposition of rare-earth doped double tungstate structures [65,[76][77][78][79][80][81][82][83][84][85], due to a number of favorable properties of these crystals, such as the possibility of doping with high concentrations of rare earth ions and the large emission and absorption cross sections of the latter in this family of crystals. Finally, there is only one report to date on a waveguide laser based on other crystals, namely on YLF:Nd 3+…”
mentioning
confidence: 99%