Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts

Chua, C.L.; Thornton, Russell; Treat, D.W.; Kneissl, Michael; Dunnrowicz, C.

doi:10.1063/1.120947

Cited by 7 publications

(2 citation statements)

References 10 publications

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“…This intriguing result would appear to presage vertical-cavity-surface-emitting lasers ͑VCSELs͒ monolithically integrated on silicon ICs using already existing technology since state-of-the-art VCSELs having an oxide-confined lasing aperture of only 5 m have already been demonstrated. 38 In terms of further improvements in the dislocation density, Kroemer et al have suggested a model for the annihilation kinetics of threading dislocation segments for GaAs/Si. 6 The asymptotic limit suggested by Kroemer's model is on the order of 10 6 cm Ϫ2 .…”

Section: Discussionmentioning

confidence: 99%

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Taylor

Jesser

Benson

et al. 2001

Journal of Applied Physics

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Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substratesA technique for the heteroepitaxy of GaAs/Si films having reduced threading dislocation density is presented. The important attribute of this technique is the suppression of three-dimensional Volmer-Weber island formation during initial deposition. This suppression is achieved by deposition of a stoichiometric GaAs buffer layer by a migration-enhanced epitaxy technique on silicon at 348 K to a thickness greater than the ''monolithic thickness,'' h m . Subsequent GaAs films deposited by conventional molecular beam epitaxy on buffer layers of thickness greater than h m possess structural and optical characteristics that exceed those for state-of-the-art GaAs/Si layers: an x-ray full width at half maximum ͑FWHM͒ of 110 arcsec with a dislocation density at the film surface of 3ϫ10 6 cm Ϫ2 and a concomitant 4 K photoluminescence FWHM of 2.1 meV. The p-i-n structures suitable for use as light-emitting diodes ͑LEDs͒ that were grown on the reduced threading dislocation density GaAs/Si and by means of forward-and reverse-bias measurements, demonstrated an ideality factor of nϭ1.5, an increased reverse-bias breakdown electric field of 2.1ϫ10 7 V/m, and an intrinsic region resistivity of 4ϫ10 7 ⍀ cm for LEDs of increasingly smaller mesa size.

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Section: Discussionmentioning

confidence: 99%

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Taylor

Jesser

Benson

et al. 2001

Journal of Applied Physics

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“…Some applications, e.g. photonic interconnects or large strips of devices for laser printing, envisage the use of thousands or tens-of-thousands of lasers [104]. If each device dissipated a milliwatt, the Watts of heat thus generated, in a small area, would cause considerable heatsinking problems.…”

Section: Lasersmentioning

confidence: 99%

Photonic crystals in the optical regime â past, present and future

Krauss

Rue

1999

Progress in Quantum Electronics

443

141

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During the last decade, photonic crystals, also known as photonic microstructures or photonic bandgap structures, have matured from an intellectual curiosity concerning electromagnetic waves to a "eld with real applications in both the microwave and optical regime. In this review, we shall focus on progress and the prospects for semiconductor structures that mainly involve guided modes interacting with periodic structures, but we also evaluate alternative material systems and fabrication methods, e.g. those based on self-organisation. We shall go from basic concepts, via a discussion of the state of the art, to device applications. Naturally, the discussion of the applications will be more speculative, but we attempt to evaluate the real prospects o!ered by photonic crystals at optical frequencies while considering practical limitations. In doing so, we identify a variety of areas such as the combination of quantum dot light emitters with photonic crystals that seem particularly promising. We discuss the prospects for enhanced light}matter interactions in photonic crystals and the related material and design issues. Overall, the aim of this review is to introduce the reader to the concepts of photonic crystals, describe the state of the art and attempt to answer the question of what uses these peculiar structures may have.

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Physics of photonic crystals and applications

Gangwar¹,

Pathak²,

Qin³

et al. 2023

Modern Luminescence From Fundamental Concepts to Materials and Applications

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Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts

Cited by 7 publications

References 10 publications

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Photonic crystals in the optical regime â past, present and future

Physics of photonic crystals and applications

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Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts

Cited by 7 publications

References 10 publications

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Photonic crystals in the optical regime â past, present and future

Physics of photonic crystals and applications

Contact Info

Product

Resources

About

Photonic crystals in the optical regime â past, present and future