Low Threshold High-Power Room-Temperature Continuous-Wave Operation Diode Laser Emitting at 2.26<tex>$muhboxm$</tex>

GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power

“…To determine the internal laser parameters, we fabricated broad-area lasers with different cavity lengths and obtained internal losses of 8.0 cm and a quantum efficiency of 97% at a standard characterization temperature of 280 K. The threshold current density of a m uncoated laser amounts to 170 A/cm at a lasing wavelength of 1.89 m, which compares well with results from other groups [7], [13], [14]. The maximum CW output power for a m laser with 97% HR/3% antireflection (AR)-coated facets was 1.9 W at 20 C [15].…”

Infrared (2–12 μm) solid-state laser sources: a review

“…19. From single broad area emitters, average powers of around 1 W have been demonstrated in the full 1.9-2.5 µm range [49][50][51][52][53][54]. In order to realize efficient optical pump sources for laser systems emitting in the 2-3 µm wavelength range and related applications, such as infrared countermeasures, diode laser arrays or bars have also been implemented with demonstrated output power in the 10-20 W range [54,55].…”

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

“…[12][13][14][15][16][17][18][19] Above all, high-performance lasers with low threshold current density (J th ), high modal gain, high characteristic temperature (T 0 ), or high output power have recently been demonstrated. [16][17][18][19] These characteristics of Sb-based lasers emitting in the NIR regime have become almost comparable to those of InP-based lasers. However, commercialization of Sb-based devices would be enhanced by developing the devices on an established material platform such as GaAs substrates, which might be able to circumvent the challenges associated with the Sb platform to realize MWIR photonic devices with low-cost performance.…”