GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power

Abstract

High-power high-brightness 1.93-m wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43 full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm 2 sr.

Infrared (2–12 μm) solid-state laser sources: a review

“…High brightness light sources have also been realized using tapered laser structures [56,57]. Hence, up to 1.5-W nearly diffraction-limited (M 2 ∼ 1.5) power has been obtain by use of GaSb-based tapered diode lasers emitting at 1.93 m with a narrow waveguide design [57] (see Fig.…”

“…Hence, up to 1.5-W nearly diffraction-limited (M 2 ∼ 1.5) power has been obtain by use of GaSb-based tapered diode lasers emitting at 1.93 m with a narrow waveguide design [57] (see Fig. 20).…”

“…Schematic of a GaSb-based tapered diode laser (the length of the ridge section is 500 µm, while the length of the tapered section is 2000 µm and the taper angle amounts to 6 • ) (left) and CW output power and power conversion efficiency versus current while the heat sink temperature was set to 20 • C (right), after[57].…”

High-power, high-brightness continuous-wave interband cascade lasers with tapered ridges

“…Tapered amplifiers 11,12 and lasers 11,13 have accomplished this task in the near-IR, and also at k % 2 lm using GaSb-based structures. [14][15][16] The common feature of those devices is that a ridge waveguide section narrow enough to support only the fundamental lasing mode adjoins a tapered section with typical half-angle %3 . Gain guiding is generally employed, since index guiding is known to inhibit the beam quality of tapered devices.…”

Tapered quantum cascade lasers

“…6,7 The resulting waveguiding of the mode implicates the advantage that strong reflections on the interfaces of high-indexsemiconductor material and low-index environment, which would have a detrimental effect on the far field pattern, cannot take place. 6,7 The resulting waveguiding of the mode implicates the advantage that strong reflections on the interfaces of high-indexsemiconductor material and low-index environment, which would have a detrimental effect on the far field pattern, cannot take place.…”