Low-Threshold Epitaxially Grown 1.3-<i>μ</i>m InAs Quantum Dot Lasers on Patterned (001) Si

Shang, Chen; Wan, Yating; Norman, Justin; Collins, Noelle; MacFarlane, Ian; Dumont, Mario; Liu, Songtao; Li, Qiang; Lau, Kei May; Gossard, A. C.; Bowers, John E.

doi:10.1109/jstqe.2019.2927581

Cited by 27 publications

(12 citation statements)

References 34 publications

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“…This active region was identical to that described in Ref. [16] . A 100 nm uid GaAs layer was grown just above the active layers, and a uniform first-order DFB grating was dry etched into this GaAs layer with an etch depth of 50 nm using an electron beam lithography patterned SiO 2 hard mask, offering a coupling coefficient κ of roughly 45 cm −1 .…”

Section: Materials and Device Fabricationsupporting

confidence: 75%

“…[8] Meanwhile, monolithic integration of III-V lasers on Si by epitaxial growth offers an elegant and lower cost path to integrate laser sources in a Si photonics platform. [9][10][11][12][13][14] This field was advanced by transitioning from s quantum well (QW) to quantum dot (QD) active region, which deliver equal or better performance than their predecessors, including low transparency current density, [15][16][17][18][19] high temperature stability, [20][21][22] low relative intensity noise, [23] nearly zero linewidth enhancement factor, [24] tailorable spectral gain bandwidth, [25] significantly reduced sensitivity to external feedback [26] and large tolerance to material defects. [27][28][29] While the emphasis for epitaxial III-V on Si research has thus far focused on Fabry-Pérot (FP)-type lasers, yielding rapid progress in reliability with extrapolated lifetimes of more than 100 years at 35°C, focus has shifted to single frequency lasers.…”

Section: Introductionmentioning

confidence: 99%

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1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan

Norman

Tong

et al. 2020

Laser & Photonics Reviews

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Distributed feedback (DFB) lasers represent a central focus for wavelength‐division‐multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot (QD) DFB lasers grown on a complementary metal‐oxide‐semiconductor (CMOS)‐compatible (001) Si substrate are reported. Temperature‐stable, single‐longitudinal‐mode operation is achieved with a side‐mode suppression ratio of more than 50 dB and a threshold current density of 440 A cm−2. A single‐lane rate of 128 Gbit s−1 with a net spectral efficiency of 1.67 bits−1 Hz−1 is demonstrated, with an aggregate total transmission capacity of 640 Gbit s−1 using five channels in the O‐band. Apart from the QD active region growth, the overall fabrication is essentially identical to the commercial process for quantum well (QW) DFB lasers. This provides a process‐compatible path for QD technology into commercial applications previously filled by QW devices. In addition, the capability to grow laser epi across entire CMOS‐compatible (001) Si wafers adds extra benefits of reduced cost, improved heat dissipation, and manufacturing scalability. Through direct epitaxial integration of III–Vs and Si, one can envision a revolution of the photonics industry in the same way that CMOS design and processing revolutionize the microelectronics industry. This is discussed from a system perspective for on‐chip optical interconnects.

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Section: Materials and Device Fabricationsupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan

Norman

Tong

et al. 2020

Laser & Photonics Reviews

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“…For example, quantum-well (QW) lasers monolithically grown on Si substrates, in which the TDD is 5 × 10 7 cm −2 corresponding to common TDD of GaAs/Si, shows no lasing behavior [131]. Therefore, a great deal of effort has been made on the reduction of TDD since the 1980s, and now the TDD of about 10 6 cm −2 for GaAs-on-Si can be achieved [48,132]. This section introduces general approaches essential for reducing TDD in III-V/Si heteroepitaxy.…”

Section: Reduction Of the Dislocationsmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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“…A 3‐dB bandwidth of 4 GHz was attained at a bias current of 104 mA. It is worth mentioning that InAs/GaAs QD lasers typically have direct modulation bandwidths around 10 GHz due to strong gain compression and low saturated gain . Currently, the frequency response bandwidth of the device was limited by the relatively long cavity length and the large pad capacitance of the electrodes, which are not optimized for high‐frequency operation.…”

Section: Measurement and Analysismentioning

confidence: 99%

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Wan

Zhang

Norman

et al. 2020

Laser & Photonics Reviews

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Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s−1 non‐return‐to‐zero signal modulation by directly probing the chip.

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Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si

Cited by 27 publications

References 34 publications

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Heteroepitaxial Growth of III-V Semiconductors on Silicon

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

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