Low-threshold current GaAsSb∕GaAs quantum well lasers grown by solid source molecular beam epitaxy

Liu, Po-Wei; Lee, Ming-Han; Lin, Hao‐Hsiung; Chen, Jhe-Ren

doi:10.1049/el:20020932

Cited by 16 publications

(4 citation statements)

References 8 publications

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“…The knowledge of GaAsSb band parameters, especially the type of GaAsSb/GaAs band alignment, provides an excellent opportunity to improve the performance of both heterojunction bipolar transistors 10 and optoelectronic devices. 11,12 Several earlier studies have reported contradictory results on the GaAsSb/GaAs conduction band offset. Depending on conduction band alignment at GaAsSb/ GaAs interface, the structural system based on these materials can be either type-I ͑with electrons localized in GaAsSb layer͒ or type-II ͑with electrons localized not in the QW region but in the GaAs barrier͒.…”

Section: Introductionmentioning

confidence: 99%

Optical studies of type-I GaAs1−xSbx/GaAs multiple quantum well structures

Sitarek

Hsu

Huang

et al. 2009

Journal of Applied Physics

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Temperature dependent surface photovoltage spectra of type I GaAs1−xSbx/GaAs multiple quantum well structures J. Appl. Phys. 113, 073702 (2013); 10.1063/1.4792065 Photoreflectance and surface photovoltage spectroscopy of beryllium-doped Ga As ∕ Al As multiple quantum wells J. Appl. Phys. 98, 023508 (2005); 10.1063/1.1978970 Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs ∕ GaAs single quantum well structures J. Appl. Phys. 96, 6298 (2004); 10.1063/1.1805724Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structuresWe present photoreflectance ͑PR͒ and surface photovoltage spectroscopy ͑SPS͒ studies of GaAs 1−x Sb x / GaAs multiple quantum well structures with fundamental transition close to 1.3 m. These two optical diagnostic tools are powerful supplementary techniques in the investigations of complicated quantum systems. PR gives detailed information about the heavy-holes related transitions, while SPS contains additional information concerning light-holes related ones. The comparison of experimental data and theoretical analysis based on the envelope function approximation, including strain and exciton binding energy, allows us to identify the observed PR and SPS features. The results point to the existence of weak type-I band alignment in samples being studied, and the Sb content dependent of conduction band offset is found to agree well with that reported by Wang et al. ͓Phys. Rev. B 70, 195339 ͑2004͔͒.

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Section: Introductionmentioning

confidence: 99%

Optical studies of type-I GaAs1−xSbx/GaAs multiple quantum well structures

Sitarek

Hsu

Huang

et al. 2009

Journal of Applied Physics

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“…The GaAsSb/GaAs heterostructure system has attracted much attention recently because of its potential application in the semiconductor industry. In particular its type-II band alignment provides an excellent opportunity to improve the performance of both heterojunction bipolar transistors (HBTs) [1] and optoelectronic devices [2][3][4]. The defining feature of a type-II quantum well is the spatial separation of electron and hole confinements in the epitaxial growth direction.…”

Section: Introductionmentioning

confidence: 99%

Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells

Hsu¹,

Sitarek²,

Huang³

et al. 2006

J. Phys.: Condens. Matter

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The effects of growth interruption times combined with Sb exposure of GaAsSb/GaAs multiple quantum wells (MQWs) have been investigated by using phototransmittance (PT), contactless electroreflectance (CER) and wavelength modulated surface photovoltage spectroscopy (WMSPS). The features originated from different portions of the samples, including interband transitions of MQWs, interfaces and GaAs, are observed and identified through a detailed comparison of the obtained spectra and theoretical calculation. A red-shift of the interband transitions and a broader lineshape of the fundamental transition are observed from samples grown under Sb exposure compared to the reference sample grown without interruption. The results can be interpreted in terms of both increases in Sb content and mixing of Sb in the GaAs interface layers. An additional feature has been observed below the GaAs region in the samples with Sb treatment. The probable origin of this additional feature is discussed.

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“…The most important advantage of 1.3 mm GaAs-based lasers is the capability to fabricate 1.3 mm vertical cavity surface emitting lasers (VCSELs) with the integration of the well-developed GaAs=AlAs distributed Bragg reflectors (DBRs) and AlAs oxidation techniques. One of the active media used for GaAs-based 1.3 mm lasers is the strained GaAs=GaAsSb quantum well (QW) [1][2][3] which exhibits a staggered type-II band alignment and possesses a potential of emitting photons with wavelength longer than that corresponding to the fundamental bandgap energy of each constituent. The strained GaAs=GaAsSb QW is a promising material for optical communication applications.…”

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confidence: 99%

“…We have successfully used molecular beam epitaxy (MBE) to grow a GaAs=GaAsSb double quantum well laser and obtained 1280 nm emission with a low threshold current density of 210 A=cm 2 at room temperature [3]. To extend the lasing wavelength to 1.3 mm, we increased the Sb content in the GaAsSb quantum well and reduced the number of quantum wells to one.…”

mentioning

confidence: 99%

1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy

2004

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A highly strained GaAs=GaAs 0.64 Sb 0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mm pulsed operation with a low threshold current density of 300 A=cm 2 . The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.

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Low-threshold current GaAsSb∕GaAs quantum well lasers grown by solid source molecular beam epitaxy

Cited by 16 publications

References 8 publications

Optical studies of type-I GaAs1−xSbx/GaAs multiple quantum well structures

Optical studies of type-I GaAs1−xSbx/GaAs multiple quantum well structures

Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells

1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy

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