Low threshold current density of 620 nm band MQW-SCH AlGaInP semiconductor lasers with Mg doped AlInP cladding layer

Murata, Hiroshi; Terui, Yoshinori; Saitoh, M.; Satoh, Yasushi; Terasaki, Ryuichi

doi:10.1049/el:19910983

Cited by 11 publications

(3 citation statements)

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“…The blue shift, broad FWHM and decreased intensity can be explained by the decreased ordered degree, which could be attributed to the high silicon doping (Yoon et al 1999;Longo et al 2001). In the past years, epitaxial AlInP lattice matched to GaAs has been studied for the applications such as window/anti-reflection (AR) layer of GaInP/GaAs multi-junction solar cells (Takamoto et al 1997; Karam et al 2001) and cladding layer of visible lasers and modulators (Murata et al 1991), mainly by using metal-organic chemical vapor deposition (MOCVD) techniques. The GSMBE growth of relative thin AlInP layers for the tunnel junction or window/AR layer of tandem solar cells have also been reported (Li et al 1998).…”

Section: Gas Source Mbe Growth Of Gainp and Alinp Ternary Alloysmentioning

confidence: 99%

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

Zhang¹,

Gu²

2012

Photodiodes - From Fundamentals to Applications

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Section: Gas Source Mbe Growth Of Gainp and Alinp Ternary Alloysmentioning

confidence: 99%

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

Zhang¹,

Gu²

2012

Photodiodes - From Fundamentals to Applications

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“…The binary compound InP is also a natural substrate widely used for both optoelectronic and high speed device applications. In the last years, ternary Al x In 1−x P alloys is the alloy of two binaries AlP and InP, has been studied by several theoretical [2][3][4] and experimental [5][6][7] research group because of its potential for the applications such as GaInP/GaAs solar cell [8,9] and visible lasers and modulators [10]. The aim of this work is to investigate the structural properties, such as the equilibrium lattice constants (a 0 ) and bulk modulus (B 0 ), and electronic properties of binary compounds, AlP and InP, and ternary alloys Al x In 1−x P by employing the density functional theory.…”

Section: Introductionmentioning

confidence: 99%

Structural and Electronic Properties of Ternary Al_xIn_1-xP Alloys

Baǧcı

Yalcin

2015

Acta Phys. Pol. A

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III-V based alloys and heterostructures have much attention due to their great device applications as well as for the development of electronic, optic and optoelectronic devices. Because of this reason, the present study reports an investigation of the structural optimization of ternary alloys AlxIn1−xP. Method of WIEN2k code is applied considering Wu-Cohen correlation energy functional based on density functional theory. We have constructed 1×1×1 supercell containing 8 atoms in zinc-blende structure. For all studied alloys structure, we have implemented geometric optimization before the volume optimization calculations. In this work, the structural and electronic properties of ternary alloys AlxIn1−xP are presented. The obtained equilibrium lattice constants of studied binary compounds are more compatible with experimental data compared to standard semilocal (LDA-PBE) calculations.

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“…It has been mainly used as window or anti-reflection layer of GaInP/GaAs multi-junction solar cell [2,3], cladding layer of visible laser and modulator [4], barrier layer of multi-quantum well light emitting diode [5] and gate dielectric of GaAs-channel MOSFET [6]. But it is seldom seen that the Al 0.52 In 0.48 P is used in the photodetector, especially used as an absorption layer since the Al 0.52 In 0.48 P is an indirect band gap semiconductor.…”

Section: Introductionmentioning

confidence: 99%