Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

Abstract

Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 μm. For a broad-area oxide stripe, uncoated Fabry–Perot laser with a cavity length of 1600 μm, the threshold current density is 546 A/cm2 at room temperature. The internal quantum efficiency for these lasers is 80%, while the materials losses are 7.0 cm−1. A characteristic temperature of 104 K was measured in the temperature range from 20 to 80 °C. Optical output up to 40 mW per facet under continuous-wave operation was achieved for these uncoated lasers at room temperature.

Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

“…However, it is interesting to note that the PL emission in k188 is shifted to even shorter than the sample without SCL and SML. This is contrary to what has been observed in MBE-grown samples, 7 the reason for which will be clarified below. Nevertheless, another sample k178 ͑0.5,4͒ has demonstrated increased PL intensity as well as longer wavelength compared to sample k155 ͑0,0͒.…”

“…[2][3][4][5][6] Efficient light-emission is crucial for many such device applications. However, incorporation of N into InGaAs decreases the radiative transition matrix elements, which will increase the threshold in the case of lasing, 7 and the luminescence efficiency in GaInNAs also decreases rapidly with increase of N content due to the increase in nonradiative recombination centers. The solubility of N in these materials is quite limited due to the large miscibility gap between As and N, which in turn leads to difficulty in incorporating N, especially in metalorganic vapor phase epitaxy ͑MOVPE͒.…”

“…It turns out that low N content is preferred when growing GaInNAs materials, although the introduction of N should be favorable for the relief of macroscopic compressive strain in InGaAs with high In content. In order to assure long emission wavelength as well as high emission efficiency, adoption of strain-compensating GaNAs layers ͑SCLs͒ and strain-mediating GaInNAs layers ͑SMLs͒ has proved an effective approach in molecular beam epitaxy ͑MBE͒, 7 but further studies are needed on how such layers influence the growth and optical properties of the heterostructures. In this letter, we investigate the effect of GaNAs SCL and GaInAs SML with varying widths on the optical properties of MOVPE-grown GaInNAs/GaAs single quantum well structures by using photoluminescence ͑PL͒ and PL excitation ͑PLE͒ spectroscopy.…”

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

“…Furthermore, strong phase separation may occur with the increase of N and In contents. 6,7 The introduction of strain-compensated GaNAs layers between GaInNAs and GaAs appears to be an effective approach to relieving the difficulty, 8 but for 1.55 m structures the increased stress at the interface between GaNAs and GaInNAs has proven unfavorable for the interface quality. 9 Additional insertion of strain-mediated GaIn͑N͒As layers is feasible for the improvement of interface quality and photoluminescence efficiency, 10,11 but this again increases the total compressive strain in the whole structure and is thus undesirable for the growth of multiQWs.…”

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

“…IR lasers, detector, solar cells) [2][3][4][5][6][7]. Lattice matched Ga 1-y In y N x As 1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices.…”