Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

Abstract

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High-gain new InGaAsN heterostructure

“…In order to assure longer emission wavelength as well as higher emission efficiency, many efforts have been tried: (a) Insert of strain-compensating GaAsN layers (SCLs) and strain-mediating InGaAsN layers (SMLs) has proved an effective approach in molecular beam epitaxy (MBE) 10 and metal organic vapor phase epitaxy. 11 The GaAsN SCLs decrease the total strain in the high strained active region to avoid the relaxation, and also the type-II band structure of GaAsN / GaAs 12 enhances the hole confinement. The SMLs suppress the In inter-diffusion between InGaAsN and GaAs(N) and smoothen the InGaAsN / GaAs (N) interfaces.…”

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

“…6,7 The introduction of strain-compensated GaNAs layers between GaInNAs and GaAs appears to be an effective approach to relieving the difficulty, 8 but for 1.55 m structures the increased stress at the interface between GaNAs and GaInNAs has proven unfavorable for the interface quality. 9 Additional insertion of strain-mediated GaIn͑N͒As layers is feasible for the improvement of interface quality and photoluminescence efficiency, 10,11 but this again increases the total compressive strain in the whole structure and is thus undesirable for the growth of multiQWs. Recently several groups have employed antimony as a surfactant to assist the growth of GaInNAs and succeeded in the realization of 1.55 m photoluminescence ͑PL͒ and lasing at room temperature, [12][13][14][15] but there has been very little investigation into the effect of Sb on the optical and structural properties.…”

Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

“…Typically, the PLE spectra of GaInNAs/ GaAs quantum wells are characterized by a steplike profile and the independence of spectra on the detection wavelength. 19 However, the GINA QWIP structure studied here shows some interesting differences. Firstly, there is only a broad peak without clear steplike features mainly due to the defect and impurity centers.…”

“…For the as-grown sample, the PLE peak shifts little with detection wavelength, which is typical for a normal GaInNAs/ GaAs QW. 19 However, the PLE peaks of the annealed sample show sensitive dependence on the detection wavelength. As the detection wavelength increases or the detection energy, E det , decreases, the energy of the PLE peak, E, decreases.…”