Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

S., B.; Fan, Wenhui; Dang, Yu; Cheah, W.K.; Yoon, Soon Fatt

doi:10.1063/1.2762290

Cited by 3 publications

(1 citation statement)

References 20 publications

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“…1− alaşım yarıiletkenlerinde, tabakalar arasındaki örgü uyumunun daha iyi olması ve iletim bandı süreksizliklerinin InP tabanlı yapılara göre daha büyük olması sayesinde bu problemler nispeten aşılmış durumdadır [5,6,7].…”

Section: Doksanlı Yılların Sonunda Kondow'ununclassified

Safsizlik Düzeyleri̇ Arasindaki̇ Kizilötesi̇ Geçi̇şler Üzeri̇ne Elektri̇k Alan Etki̇si̇

Al¹,

Yıldız²,

Ungan³

2015

CSJ

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Özet. Bu çalışmada GaInNAs/GaAs tek kuantum kuyusundaki 1s, 2s ve 2p± donor safsızlık enerji düzeyleri arasındaki kızılötesi geçişler üzerine elektrik alan, azot ve indiyum konsantrasyonlarının etkisi, etkin kütle yaklaşımı çerçevesinde varyasyonel yöntem kullanılarak incelenmiştir. Sonuçlar donor safsızlık atomunun konumu ve kuyu genişliğinin bir fonksiyonu olarak sunulmuştur.

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Section: Doksanlı Yılların Sonunda Kondow'ununclassified

Safsizlik Düzeyleri̇ Arasindaki̇ Kizilötesi̇ Geçi̇şler Üzeri̇ne Elektri̇k Alan Etki̇si̇

Al¹,

Yıldız²,

Ungan³

2015

CSJ

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Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells

Ungan

Yesilgül

et al. 2016

Int. J. Mod. Phys. B

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The effects of nitrogen and indium concentrations on the [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]-like donor impurity energy states in a single [Formula: see text] quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.

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An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

et al. 2012

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In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga0.68In0.32NyAs1 − y/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effect measurements have been performed between 10 and 300 K. Drastic decrease is observed in the electron mobility of n-type N-containing samples due to the possible N-induced scattering mechanisms and increasing effect mass of the alloy. The temperature dependence of electron mobility has an almost temperature insensitive characteristic, whereas for p-type samples hole mobility is decreased drastically at T > 120 K. As N concentration is increased, the hole mobility also increased as a reason of decreasing lattice mismatch. Screening effect of N-related alloy scattering over phonon scattering in n-type samples may be the reason of the temperature-insensitive electron mobility. At low temperature regime, hole mobility is higher than electron mobility by a factor of 3 to 4. However, at high temperatures (T > 120 K), the mobility of p-type samples is restricted by the scattering of the optical phonons. Because the valance band discontinuity is smaller compared to the conduction band, thermionic transport of holes from QW to the barrier material, GaAs, also contributes to the mobility at high temperatures that results in a decrease in mobility. The hole mobility results of as-grown samples do not show a systematic behavior, while annealed samples do, depending on N concentration. Thermal annealing does not show a significant improvement of electron mobility.

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Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

Abstract: Annealing effects on the optical properties of aGaInNAs double barrier quantum well infrared photodetector

Cited by 3 publications

References 20 publications

Safsizlik Düzeyleri̇ Arasindaki̇ Kizilötesi̇ Geçi̇şler Üzeri̇ne Elektri̇k Alan Etki̇si̇

Safsizlik Düzeyleri̇ Arasindaki̇ Kizilötesi̇ Geçi̇şler Üzeri̇ne Elektri̇k Alan Etki̇si̇

Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

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