Low temperature wet etching to reveal sub-surface damage in sapphire substrates

Kumar, Purushottam; Lee, Jinhyung; Lee, Gwangwon; Rao, Suhas; Singh, Deepika; Singh, Rajiv K.

doi:10.1016/j.apsusc.2013.01.137

Cited by 35 publications

(19 citation statements)

References 13 publications

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“…Surfaces also showed atomic terracing with no subsurface damage. Further subsurface damage studies have been carried out using wet chemical etching methods reported elsewhere [11] . The etching studies were carried out on the colloidal silica polished and RCMP-polished c-plane sapphire substrate using a 3:1 H 2 SO 4 :H 3 PO 4 solution.…”

Section: Surface Finishmentioning

confidence: 99%

Novel rapid polishing process for fabrication of sapphire windows

et al. 2013

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Sapphire is uniquely suitable for sensor windows of electro-optical systems due to its high transparency, high mechanical strength, and chemical inactivity. Unfortunately, these same characteristics also cause polishing of sapphire windows to be extremely difficult and slow. Hence the challenge is to develop a process for affordable production of large area sapphire windows with low-roughness, low-stress and without surface and subsurface damage. Here we report a novel rapid chemical mechanical polishing process that increases the material removal rate during polishing of sapphire by greater than twofold over conventional processes. Such a process can also produce angstrom level surface finish.

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Section: Surface Finishmentioning

confidence: 99%

Novel rapid polishing process for fabrication of sapphire windows

et al. 2013

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“…The preparation processes of sapphire wafer are required to obtain an ultra-smooth, sub-surface damage-free epi-ready surface, which often involves sawing, grinding, lapping and chemical mechanical polishing (CMP) [5]. As the final surface preparation step, polishing quality is critical for high performance epi-growth.…”

Section: Introductionmentioning

confidence: 99%

“…Sapphire is well-known as the most common substrate material for the growth of GaN based epitaxial films for light emitting diodes (LED) [1][2][3][4]. The preparation processes of sapphire wafer are required to obtain an ultra-smooth, sub-surface damage-free epi-ready surface, which often involves sawing, grinding, lapping and chemical mechanical polishing (CMP) [5].…”

Section: Introductionmentioning

confidence: 99%

The Research of Reactivity between Nano-abrasives and Sapphire during Polishing Process

2015

Integrated Ferroelectrics

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Reactivity between nano-sized abrasives and sapphire wafer has been studied by interfacial solid state reaction during polishing process, and the abrasive with the highest reactivity has been selected from magnesium oxide, silicon dioxide and ferric oxide. Using the Sol-Gel polishing films, sapphire wafers were polished in the form of wet and dry mechanical chemical polishing respectively. The Raman spectra and Grazing incidence X-ray diffraction records show that aluminum silicate with the composition mullite was formed on the polished wafer surface, and silicon dioxide has the highest reactivity than other oxide abrasives under the same conditions during polishing the sapphire substrates.

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“…Chemical mechanical polishing (CMP) has been broadly used to produce an ultra‐smooth surface . And the planarization process of glass has been reported by various researchers, but mechanical and chemical defects recognized as the most influential crux incurred during post‐processing and polishing renders its comprehensive utilization ,…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Chemical Residuals on the Fused Silica during Chemical Mechanical Polishing

Chen

Luo

et al. 2018

ChemistrySelect

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Chemical residuals on fused silica after chemical mechanical polishing with silica and ceria have been analyzed. The surface of fused silica terminates with silanol after being polished with silica abrasives but ends up with Ce‐O−Si in a ceria‐based slurry under the CMP environment. The silanol firstly synthesizes on a fused silica surface polished with ceria, but then further reacts with hydroxyl cerium groups scattering in the slurry forming Ce‐O−Si. It also reveals that polishing fused silica with silica abrasives is an alternative way giving an ultra smooth surface.

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Low temperature wet etching to reveal sub-surface damage in sapphire substrates

Cited by 35 publications

References 13 publications

Novel rapid polishing process for fabrication of sapphire windows

Novel rapid polishing process for fabrication of sapphire windows

The Research of Reactivity between Nano-abrasives and Sapphire during Polishing Process

Investigation of the Chemical Residuals on the Fused Silica during Chemical Mechanical Polishing

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