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Reactivity between nano-sized abrasives and sapphire wafer has been studied by interfacial solid state reaction during polishing process, and the abrasive with the highest reactivity has been selected from magnesium oxide, silicon dioxide and ferric oxide. Using the Sol-Gel polishing films, sapphire wafers were polished in the form of wet and dry mechanical chemical polishing respectively. The Raman spectra and Grazing incidence X-ray diffraction records show that aluminum silicate with the composition mullite was formed on the polished wafer surface, and silicon dioxide has the highest reactivity than other oxide abrasives under the same conditions during polishing the sapphire substrates.