Low-temperature transport anomaly in the magnetoresistive compound(La0.5Pr0.2)Ba0.3MnO3

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

“…This could be understood in terms of magnetic-field-induced suppression of inelastic scattering whereas the elastic scattering is hardly affected by the magnetic field. This is consistent with the theoretical predictions by Rana et al 11 who showed that T min increases with increasing magnetic field.…”

“…7 It is noteworthy that Lee et al 8 theoretically pointed out the possible presence of quantum corrections to conductivity ͑QCC͒ in manganite single crystals and thin films. [9][10][11][12] Maritato et al 13 studied the effects of thickness ͑t͒ on the lowtemperature ͑Ͻ60 K͒ transport properties of La 0.7 Sr 0.3 MnO 3 ͑3.5Յ t Յ 40 nm͒ thin films, and found that the resistivity upturn appears with decreasing film thickness and interpreted this phenomena as due to the QCC effect which corrects the resistivity from two sources: ͑1͒ electron-electron ͑e-e͒ interactions enhanced by disorder and ͑2͒ weak localization effect due to the finite dimensions of the systems. Mukhopadhyay et al 12 studied the coexist of quantum corrections and intergranular transport on La 0.67 Sr 0.33 MnO 3 and Nd 0.67 Sr 0.33 MnO 3 thin films and ascribed it to e-e interaction in two dimensions.…”

Structural, transport and magnetic properties of monovalent doped La1−xNaxMnO3 manganites

“…In Fig.12, it is clearly seen that, for the samples having higher substitution of monovalent (LN20, LN25 and LN30) in which the size disorder effect is dominant over the transport favorable conditions, does not follow completely the ZDE polynomial law, specially at low temperatures (indicated by the encircled area and enlarged views with theoretically fitted data -violet lines in Fig.12). In order to understand the low temperature transport mechanism (well below LN2 temperature) in detail, the resistivity minima model has been fitted to all the samples under various applied magnetic fields [31,32]. Disorder enhanced coulombic interaction induced weak localization leads to electron -electron scattering at low temperatures, which enhances the resistivity at low temperature which can be understood using the expression: ρ = [1 / (σ 0 + BT 1/2 )] + ρ n T n [31,32].…”

“…In order to understand the low temperature transport mechanism (well below LN2 temperature) in detail, the resistivity minima model has been fitted to all the samples under various applied magnetic fields [31,32]. Disorder enhanced coulombic interaction induced weak localization leads to electron -electron scattering at low temperatures, which enhances the resistivity at low temperature which can be understood using the expression: ρ = [1 / (σ 0 + BT 1/2 )] + ρ n T n [31,32]. All the ρ -T data of LNMO manganites under various applied fields have been fitted using this equation in the temperature range 5 -LN2…”

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La0.88Sr0.12MnO3 thin films

“…The low-temperature resistivity upturn (minimum) in manganites is generally attributed to the following sources: grain-boundary scattering, phase separation, the Kondo effect, and electron-electron localization [21,[37][38][39][40]. The Kondo contribution arises due to the scattering from a magnetic impurity in a nonmagnetic lattice.…”