Low-temperature thermal conductivity of thermoelectric Co1−M Si (M = Fe, Ni) alloys

Ivanov, Yuri; Levin, A. A.; Новиков, С. В.; Pshenay-Severin, D. A.; Волков, М. П.; Zyuzin, A. K.; Бурков, А. Т.; Nakama, Takao; Schnatmann, Lauritz; Reith, Heiko; Nielsch, Kornelius

doi:10.1016/j.mtener.2021.100666

Cited by 7 publications

(5 citation statements)

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“…The thermal conductivity of MoP is also higher than other topological metals considered as emerging interconnects. [ 10,28–32 ]…”

Section: Resultsmentioning

confidence: 99%

“…D) Comparison of thermal conductivity of various materials for interconnects. While Cu has a high thermal conductivity (≈400 W m −1 K −1 ), the effective thermal conductivity of actual Cu interconnects is much lower due to the presence of a barrier layer such as TaN that has a low thermal conductivity (≈3 W m −1 K −1 ) [28][29][30][31][32]. The measured thermal conductivity of MoP is similar to that of Ru and Co and higher than other topological metals.…”

mentioning

confidence: 86%

“…The thermal conductivity of MoP is also higher than other topological metals considered as emerging interconnects. [10,[28][29][30][31][32] Is there another topological semimetal that may be better than MoP for interconnect applications? To answer this, we surveyed reported values of room temperature transport properties of topological semimetals.…”

Section: Benchmark and Prospect Of Mop As Low-resistance Interconnect...mentioning

confidence: 99%

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Topological Metal MoP Nanowire for Interconnect

et al. 2023

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of interconnects due to its ever-increasing resistivity that stems from surface and grain boundary electron scattering. [3] The high resistivity of current Cu interconnects can account for up to 35% of total signal delays and nearly half of dynamic power dissipation in computer chips. [4] Thus, future energy-efficient computing technologies require breakthroughs in interconnect technologies, [5] particularly in new interconnect materials.Topological semimetals are promising materials for low resistance interconnects as their topologically protected surface electrons are forbidden to backscatter. [6][7][8] Several experimental studies on nanostructured topological semimetals show promising results. The Weyl semimetal NbAs, for example, exhibit a factor of ten decrease in resistivity from bulk crystals (35 µΩ cm) to nanobelts (≈3 µΩ cm) at room temperature. [9] Similarly, recent theoretical results from IBM predict that the multifold fermion system CoSi would exhibit lower resistivity than Cu at very small dimensions as the current conduction is dominated by Fermi-arc surface states. [10] Among recently reported topological metals, molybdenum phosphide (MoP) is a simple binary compound that was predicted [11] and experimentally confirmed to host topologically protected fermions. [12] Single crystal MoP shows extremely low resistivity and high carrier density, [13] representing an exciting opportunity to potentially replace Cu interconnects. In this work, we report The increasing resistance of copper (Cu) interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7 nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising candidates to potentially replace current Cu interconnects. Here, we report the unprecedented resistivity scaling of topological metal molybdenum phosphide (MoP) nanowires, and it is shown that the resistivity values are superior to those of nanoscale Cu interconnects <500 nm 2 cross-section areas. The cohesive energy of MoP suggests better stability against electromigration, enabling a barrier-free design . MoP nanowires are more resistant to surface oxidation than the 20 nm thick Cu. The thermal conductivity of MoP is comparable to those of Ru and Co. Most importantly, it is demonstrated that the dimensional scaling of MoP, in terms of line resistance versus total cross-sectional area, is competitive to those of effective Cu with barrier/liner and barrier-less Ru, suggesting MoP is an attractive alternative for the scaling challenge of Cu interconnects.

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“…The thermal conductivity of MoP is also higher than other topological metals considered as emerging interconnects. [ 10,28–32 ]…”

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 86%

Section: Benchmark and Prospect Of Mop As Low-resistance Interconnect...mentioning

confidence: 99%

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Topological Metal MoP Nanowire for Interconnect

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“…From a materials perspective, the performance of the thermoelectric can be altered using various methods due to the different components contributing to a single parameter. For instance, thermal conductivity comprises lattice (κ lat ), bipolar (κ bi ), and electrical (κ ele ) components [12][13][14][15][16][17][18][19][20][21]. Much of the work in decreasing thermal conductivity is aimed towards κ lat , utilizing strategies such as downscaling and isovalent substitution, which hinder the transport of heat-carrying acoustic phonons [22][23][24][25][26][27][28][29][30][31][32][33][34].…”

Section: Thermoelectric Devicesmentioning

confidence: 99%

Potential of Recycled Silicon and Silicon-Based Thermoelectrics for Power Generation

et al. 2022

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Thermoelectrics can convert waste heat to electricity and vice versa. The energy conversion efficiency depends on materials figure of merit, zT, and Carnot efficiency. Due to the higher Carnot efficiency at a higher temperature gradient, high-temperature thermoelectrics are attractive for waste heat recycling. Among high-temperature thermoelectrics, silicon-based compounds are attractive due to the confluence of light weight, high abundance, and low cost. Adding to their attractiveness is the generally defect-tolerant nature of thermoelectrics. This makes them a suitable target application for recycled silicon waste from electronic (e-waste) and solar cell waste. In this review, we summarize the usage of high-temperature thermoelectric generators (TEGs) in applications such as commercial aviation and space voyages. Special emphasis is placed on silicon-based compounds, which include some recent works on recycled silicon and their thermoelectric properties. Besides materials design, device designing considerations to further maximize the energy conversion efficiencies are also discussed. The insights derived from this review can be used to guide sustainable recycling of e-waste into thermoelectrics for power harvesting.

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“…Other early reported TE materials like BiSb alloys were found to show good TE performance at low temperatures . These efforts continued to develop other low-temperature TE materials like a Ta 4 SiTe 4 crystal in its one-dimensional form, Ce(Ni 1‑x Cu x ) 2 Si 2 and CeNi 2 (Si 1‑y Ge y ) 2 alloys, and CoSi and Co 1‑x M x Si alloys . A recent work on Ag 2 Se showed that this material is a promising low-temperature TE material as it has a high z T value (e.g., >0.4 around 200 K) .…”

Section: Introductionmentioning

confidence: 99%

High Thermoelectric Power Generation below Room Temperature by TiS₂ Compact Pellet

Salah

Abdullahi

Baghdadi

et al. 2023

ACS Appl. Electron. Mater.

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The highly anisotropic single crystals of titanium disulfide (TiS2) have an n-type semiconducting property with attractive thermoelectric (TE) performance above room temperature (RT). However, the TE properties and power generation below the RT of TiS2 have not yet been reported. In this work, the TE performance of the TiS2 powder compact in a pellet form was investigated in the temperature range of 233–323 K. Moreover, the power generation characteristics were measured under the temperature gradient of ΔT = 25 and 45 K either below or above RT. The electrical conductivity of the powder compact decreased by heating, while the Seebeck coefficient increased. Annealing the compact pellet was also performed and found to significantly enhance its TE performance. The resulting power factor recorded ∼540 μW/mK2 at T = 233 K and stayed almost constant despite a temperature change. Similar trends were also observed in the charge carrier density and Hall mobility, with a slight decrease during heating. On the other hand, the measured in-plane thermal conductivity of a TiS2 compact is 3.92 W/mK at T = 298 K and increased to 4.44 W/mK at T = 373 K. The resulting figure of merit, zT, was 0.041–0.048 at 298–373 K. The generated maximum power of a TiS2 single leg module recorded 1.24 and 4.3 μW at ΔT = 25 and 45 K (cold side temperature T 1 and hot side temperature T 2 are both > RT), respectively, above RT. Surprisingly, the generated TE power below RT was found to be several times higher than the generated power above RT with recorded values of 10.2 and 26.5 μW at ΔT = 25 and 45 K (T 1 and T 2 are both < RT), respectively. This remarkable result firmly indicates that comparatively costless TiS2 compacts composed only of nontoxic elements should be useful to generate TE power in cold environments below RT utilizing the waste heat from a warm system.

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Low-temperature thermal conductivity of thermoelectric Co1−M Si (M = Fe, Ni) alloys

Cited by 7 publications

References 40 publications

Topological Metal MoP Nanowire for Interconnect

Topological Metal MoP Nanowire for Interconnect

Potential of Recycled Silicon and Silicon-Based Thermoelectrics for Power Generation

High Thermoelectric Power Generation below Room Temperature by TiS₂ Compact Pellet

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Low-temperature thermal conductivity of thermoelectric Co1−M Si (M = Fe, Ni) alloys

Cited by 7 publications

References 40 publications

Topological Metal MoP Nanowire for Interconnect

Topological Metal MoP Nanowire for Interconnect

Potential of Recycled Silicon and Silicon-Based Thermoelectrics for Power Generation

High Thermoelectric Power Generation below Room Temperature by TiS2 Compact Pellet

Contact Info

Product

Resources

About

High Thermoelectric Power Generation below Room Temperature by TiS₂ Compact Pellet