Low temperature tempering-induced changes in bulk resistivity, temperature coefficient of resistivity and stress in physically vapor-deposited TiN

Ernsberger, C.; Perry, A.J.; Lehman, L.P.; Miller, A. E.; Pelton, Alan R.; Dąbrowski, B.

doi:10.1016/0257-8972(88)90003-5

Cited by 24 publications

(7 citation statements)

References 13 publications

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“…In our previous study [12], we proposed a method to simultaneously determined E and ν by combining sin 2 ψ XRD and laser curvature techniques, where six strain components (ε 11 , ε 22 , ε 33 , ε 12 , ε 13 and ε 23 ) could be obtained individually. However, the resultant E of a randomtextured TiN film was 816 GPa, which was unreasonably high compared with other literature values measured by XRD methods, ranging from 250 GPa to 640 GPa [15][16][17][18][19][20]. For polycrystalline TiN coatings deposited on Si, the typical E value obtained from mechanical methods is ranged from 300 to 500 GPa [21,22], which is fairly consistent with the values from density function theory (DFT) calculations [23,24].…”

Section: Introductionsupporting

confidence: 82%

Determination of average X-ray strain (AXS) on TiN hard coatings using cos2αsin2ψ X-ray diffraction method

Wang

Chuang

et al. 2015

Surface and Coatings Technology

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Keywords:Average X-ray strain (AXS) Average effective X-ray elastic constant (AEXEC) Cos 2 αsin 2 ψ method High energy X-ray Laser curvature method TiN hard coating For stress measurement on thin films and coatings using X-ray diffraction (XRD) methods, the uncertainty is commonly acknowledged to be from elastic constants. However, the uncertainty can be due to the statistical fluctuation of strain measured by XRD. In this study, we proposed a method where the average X-ray strain (AXS) was determined using cos 2 αsin 2 ψ XRD technique at several rotational (ϕ) angles to improve the accuracy of the measurement of X-ray stress or X-ray elastic constants (XECs). The major concept was to increase sampling volume by measuring X-ray strain at multiple rotational angles. TiN hard coating on Si (100) substrate was selected as the model system, where the residual stress was determined by laser curvature technique and the accompanying lattice strain was measured by cos 2 αsin 2 ψ method. The average effective elastic constant (AEXEC) could be attained by substituting the residual stress into the slope of AXS vs. cos 2 αsin 2 ψ plot. The AEXEC was served as an indicator to validate the AXS measurement. By substituting AEXEC in conventional sin 2 ψ XRD stress measurement, the deviation of the result from the stress obtained by laser curvature method was less than 7%, indicating that AXS effectively reduced the uncertainty in XECs and thus increased the accuracy of stress measurement. The concept of increasing sampling volume was also confirmed using synchrotron X-ray source, where the statistical fluctuation in X-ray strain could be further reduced by performing the measurement at all azimuthal direction. The experimental results showed that the uncertainty on XEC measurement by sin 2 ψ method was less than 10%, if sufficient sampling volume was provided. Furthermore, using AXS and elastic constant measured by nanoindentation (E NIP ) to calculate X-ray stress, the stress deviation from that by laser curvature method could be substantially reduced even down to 3% with sufficient sampling points. Therefore, AXS may serve as a convenient parameter, when combining with E NIP , in X-ray stress measurement, by which residual stress of hard coatings comparable to that by laser curvature method can be obtained without using XECs.

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Section: Introductionsupporting

confidence: 82%

Determination of average X-ray strain (AXS) on TiN hard coatings using cos2αsin2ψ X-ray diffraction method

Wang

Chuang

et al. 2015

Surface and Coatings Technology

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“…The diffraction pattern from this region was fully indexed according to the NaC1 crystal structure with a lattice parameter of 0.424 nm. No extra reflections from any second phases were observed in the SADP, which is consistent with the quantitative chemical analysis from Auger spectroscopy that indicates that the films were stoichiometric with low values of oxygen [1]. Furthermore, it can be seen that the diffraction pattern does not show any preferred crystallographic texture.…”

Section: Resultssupporting

confidence: 85%

“…The microstructural observations of the thin films deposited onto the Cu-Be, alumina and glass substrates will be discussed in terms of previously reported findings. In particular we will interpret the present results in conjunction with a companion publication by Ernsberger et al [1]. In the Ernsberger paper, the residual stress of the TiN thin films was measured as a function of temperature and film thickness by means of in-situ cantilever beam-bending experiments.…”

Section: Discussionsupporting

confidence: 60%

“…These conditions allowed a deposition rate of approximately 210 nm/min and resultant film thicknesses of approximately 2 #m. More specific details of the sputtering conditions may be found in refs. [1,7].…”

Section: Thin Film Depositionmentioning

confidence: 99%

“…The commercial importance of this ceramic alloy stems not only from its excellent properties, but also because TiN can be readily processed with modern thin-film technologies. It has been recently recognized, however, that rather large values of internal stresses (-6 GPa) can be generated in the as-deposited thin films depending on the exact processing condi-tions [1][2][3]. Rickerby pointed out that there are two components to these internal, or residual, stresses: intrinsic stress and thermal stress [2].…”

Section: Introductionmentioning

confidence: 99%

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Microstructural studies of sputter-deposited TiN ceramic films

Pelton¹,

Dąbrowski²,

Lehman³

et al. 1989

Ultramicroscopy

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A transmission electron microscopy study was undertaken to characterize the microstructures of TiN thin films that were sputter-deposited onto CuBe , alumina and glass substrates. There were no substantial mierostructural differences observed among the films; the average grain size was 150 nm and the grains were surrounded by growth defect voids which are characteristic of Type-T microstructures. For comparison, the microstructure of TiN that was directly deposited onto carbon-coated TEM grids was also characterized. These films also contained grain-boundary voids, although the average grain size was only 15 nm. A prominent feature of the films deposited on the three substrates was the presence of intragranular microcracks which were usually associated with grain-boundary cusps or facets. These cusps were observed to lie on {220} planes with arrays of microcracks emanating from them with a periodicity of approximately 10 nm. It was speculated that due to the extremely high residual stress in these films, these cusps act as stress raisers that promote the formation of the microcracks.

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Residual stress in physically vapor deposited films: A study of deviations from elastic behavior

Perry¹,

Jagner²

1989

Thin Solid Films

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Low temperature tempering-induced changes in bulk resistivity, temperature coefficient of resistivity and stress in physically vapor-deposited TiN

Cited by 24 publications

References 13 publications

Determination of average X-ray strain (AXS) on TiN hard coatings using cos2αsin2ψ X-ray diffraction method

Determination of average X-ray strain (AXS) on TiN hard coatings using cos2αsin2ψ X-ray diffraction method

Microstructural studies of sputter-deposited TiN ceramic films

Residual stress in physically vapor deposited films: A study of deviations from elastic behavior

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