Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes

Kondo, Daiyu; Sato, Shintaro; Yagi, Kazuichi; Harada, Naoki; Sato, Motonobu; Nihei, Misato; Yokoyama, Naoki

doi:10.1143/apex.3.025102

Cited by 106 publications

(69 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, there have only been a few studies in this area. For example, iron films deposited on a SiO 2 /Si substrate by conventional magnetron sputtering have been used to synthesize graphene, and five-nanometer thickness graphene predominated in the product [20]. In the present work, we demonstrate an ambient pressure CVD method that allows us to successfully synthesize large-area, few-layer graphene films on iron foil (100 μm thick in our experiment) with CH 4 as the carbon source.…”

Section: Introductionmentioning

confidence: 88%

Synthesis of large-area, few-layer graphene on iron foil by chemical vapor deposition

et al. 2011

View full text Add to dashboard Cite

We demonstrate a simple and controllable way to synthesize large-area, few-layer graphene on iron substrates by an optimized chemical vapor deposition (CVD) method using a mixture of methane and hydrogen. Based on an analysis of the Fe-C phase diagram, a suitable procedure for the successful synthesis of graphene on Fe surfaces was designed. An appropriate temperature and cooling process were found to be very important in the synthesis of highly crystalline few-layer graphene. Graphene-based field-effect transistor (FET) devices were fabricated using the resulting few-layer graphene, and showed good quality with extracted mobilities of 300-1150 cm 2 /(V·s).

show abstract

Section: Introductionmentioning

confidence: 88%

Synthesis of large-area, few-layer graphene on iron foil by chemical vapor deposition

et al. 2011

View full text Add to dashboard Cite

show abstract

“…In this section, we explain the synthesis of few-layer and multilayer graphene by thermal CVD method at low temperature [16]. As the source gas, C 2 H 2 diluted by Ar was used, which is well known to be suitable for low-temperature synthesis of nano-carbon materials, such as carbon nanotubes.…”

Section: Low-temperature Synthesis Of Graphene With Chemical Vapor Dementioning

confidence: 99%

Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field-Effect Transistors Using Transfer-Free Processes for Future LSIs

Kondo

Sato

2015

Frontiers of Graphene and Carbon Nanotubes

Self Cite

View full text Add to dashboard Cite

High-quality graphene synthesis by chemical vapor deposition (CVD) on a substrate has been achieved recently. Although synthesized graphene is often transferred to another substrate for electrical measurements, this transfer process may not be appropriate for applications using a large substrate, including largescale integrated circuits (LSIs). Therefore, it is desirable that graphene channels are formed directly on a substrate without such transfer processes. Furthermore, graphene should be formed at low temperature to avoid possible adverse effects on the substrate.In this study, thickness-controlled growth of few-layer and multilayer graphene was demonstrated at 650 ı C by the thermal CVD method, and top-gated field-effect transistors (FETs) were fabricated directly on a large SiO 2 /Si substrate without using graphene-transfer processes. Graphene was synthesized on patterned Fe films. The iron was subsequently etched after both ends of the graphene were fixed by source and drain electrodes, leaving the graphene channels bridging the electrodes all over the substrate. Top-gated FETs were then made after covering the channels with HfO 2 . The fabricated devices exhibit ambipolar behavior and can sustain a high-density current. The growth mechanism of graphene was also investigated. In addition, a novel technique for synthesizing graphene directly on insulating substrate is also described.

show abstract

“…Actually, related to this development, some group [ 72 ] has explored patterned Fe in order to obtain site-specifi c (transfer-free) graphene FETs, combined with microelectrodes for the external electrical test.…”

Section: Combination Of Fibid-c and Metals: Film And Particle Depositionmentioning

confidence: 99%

Metal-Induced Crystallization of Focused Ion Beam-Induced Deposition for Functional Patterned Ultrathin Nanocarbon

Rius

Borrisé

Mestres

2013

Lecture Notes in Nanoscale Science and Technology

View full text Add to dashboard Cite

This chapter recapitulates our work based on focused ion beam-induced deposition of ultrathin amorphous carbon (FIBID-C) patterns as a route towards the easy integration of carbon nanomaterials. The use of postdeposition thermal processing causes structural changes, chemical modifi cation, and tuning of functional properties of the as-deposited FIBID-C. Particularly, in combination with metals our approach allows obtaining site-specifi c graphene-like features on insulators. We explore how to convert FIBID-C into functional materials, namely, graphene-like layers or diamond-like coatings, or combination with various metals.First, we provide a general description of FIBID technique to frame the profuse detailed case of carbon deposition of ultrathin carbon micropatterns. Then, the study of the transformation of FIBID-C by thermal processing reveals the unique characteristics of the as-deposited materials and particularities of the metal-induced crystallization. A detailed section on Raman spectroscopy is included as it represents a powerful tool to identify any carbon form, from amorphous to perfectly crystalline,

show abstract

Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes

Cited by 106 publications

References 16 publications

Synthesis of large-area, few-layer graphene on iron foil by chemical vapor deposition

Synthesis of large-area, few-layer graphene on iron foil by chemical vapor deposition

Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field-Effect Transistors Using Transfer-Free Processes for Future LSIs

Metal-Induced Crystallization of Focused Ion Beam-Induced Deposition for Functional Patterned Ultrathin Nanocarbon

Contact Info

Product

Resources

About