Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

“…Furthermore, these GaN films show a much better thickness homogeneity than the GaN films grown using traditional PLD as well as with the combination of ECR-PEMOCVD and radio-frequency magnetron sputtering. [2][3][4][22][23][24][25][26][27][28] In situ RHEED, SEM and AFM measurements were deployed to further investigate the surface morphologies of the as-grown GaN films. After annealing for 60 min, atomically flat Cu(111) was achieved with sharp and clear RHEED patterns, as shown in Fig.…”

“…1 Thereby, these results are slightly better than the results reported by other groups. [2][3][4][24][25][26][27][28] Nevertheless, the crystalline quality of the GaN films is much poorer than of the ones grown on sapphire substrates, which is partly due to the poor quality of the Cu substrate, as the FWHM value of the Cu(111) X-ray rocking curve is as high as 0.8°and corresponds to a screw dislocation density of ~10 11 cm −2 . These dislocations may propagate into the AlN and GaN epitaxial layers and eventually deteriorate the crystalline quality of the GaN films.…”

“…[19][20][21] So far, many III-nitride films have been grown on metal substrates using traditional PLD, [2][3][4][22][23][24] and the combination of electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) and radio-frequency magnetron sputtering. [25][26][27][28] Particularly, GaN films grown on Cu substrates using the traditional PLD technology have been demonstrated by S. Inoue et al 4 However, GaN films grown by these techniques usually show a relatively poor thickness homogeneity due to the highly directional distribution of the precursors on the metal substrates. [2][3][4][22][23][24][25][26][27][28] If the GaN-based optoelectronic devices were prepared with such GaN films, the product qualification rate would be very low.…”

“…[25][26][27][28] Particularly, GaN films grown on Cu substrates using the traditional PLD technology have been demonstrated by S. Inoue et al 4 However, GaN films grown by these techniques usually show a relatively poor thickness homogeneity due to the highly directional distribution of the precursors on the metal substrates. [2][3][4][22][23][24][25][26][27][28] If the GaN-based optoelectronic devices were prepared with such GaN films, the product qualification rate would be very low. 19 What is more, GaN films grown on Cu substrates lack a comprehensive study.…”

Degradation of AlGaInP light emitting diodes under reverse-bias operations in salty water vapor

“…However, innate high-density defects and dislocations of III-V materials have influenced the development of LED technology [2]. Recently, researchers have studied various methods to reduce the defects and dislocations between the substrate [3]. On the other hand, reliability tests have been carried out for practical optical and electronic devices to provide device or material quality examination feedback to engineers in charge of the fabrication process [4].…”