Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits

Liang, Di; Fang, Alexander W.; Park, Hyundai; Reynolds, T.E.; Warner, K.; Oakley, D.C.; Bowers, John E.

doi:10.1007/s11664-008-0489-1

Cited by 86 publications

(53 citation statements)

References 29 publications

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“…Such integration allows creating integrated optical devices, which take the best of both worlds: III-V semiconductors for efficient light emission and amplification and silicon for its low loss and high index contrast waveguiding. In order to densely integrate the III-V semiconductor with the silicon waveguide circuits, mainly molecular wafer bonding and DVS-BCB adhesive bonding techniques [2][3][4] are used and are actively reported in state-of-the-art hybrid amplifiers [5,6] and lasers [7][8][9][10][11]. In these approaches, unstructured InP-based dies are bonded, epitaxial layers down, on an SOI waveguide circuit wafer, after which the InP growth substrate is removed and the III-V epitaxial film is processed.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Keyvaninia¹,

Roelkens²,

Thourhout³

et al. 2013

Opt. Express

178

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Abstract:A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

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Section: Introductionmentioning

confidence: 99%

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Keyvaninia¹,

Roelkens²,

Thourhout³

et al. 2013

Opt. Express

178

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“…[9][10] In our work, we employ an adhesive bonding process using DVS-BCB as adhesive bonding agent. This technique does not require an ultra-clean surface unlike direct bonding, where the bond is formed based on van der Waals attraction between the two wafer surfaces.…”

Section: Heterogeneous Integrationmentioning

confidence: 99%

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

Hattasan

Cerutti

Rodriguez

et al. 2011

Quantum Sensing and Nanophotonic Devices VIII

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Mid-infrared spectroscopy has gained significant importance in recent years as a detection technique for substances that absorb in this spectral region. Traditionally, a spectroscopic system consists of bulky equipment which is difficult to handle and incurs high cost. An integrated spectroscopic system would eliminate these disadvantages. GaSb-based active opto-electronic devices allow realizing mid-infrared light sources and detectors in the 2-3μm wavelength range for such integrated systems. Silicon photonics, based on Silicon-on-Insulator (SOI) waveguide circuits, on the other hand, is a well established technology based on high refractive index contrast waveguides, enabling ultra-compact passive integrated photonic circuits. Moreover, SOI waveguide circuit processing is compatible with CMOS processes. Hence, the integration of GaSb-based active devices onto SOI passive waveguide circuits potentially allows highly compact spectroscopic systems with a large degree of freedom in passive device design to improve the system performance. This approach has a high potential for several applications, e.g. an implantable glucose level monitor and gas sensing devices.In this paper, we report our work on the integration of GaSb-based epitaxy onto SOI waveguide circuits. The heterogeneous integration is based on an epitaxial layer transfer process using the polymer divinylsiloxanebenzocyclobutene (DVS-BCB) as a bonding agent. The process is performed by transferring the epitaxial layer to an SOI waveguide circuit wafer through a die-to-wafer bonding process. With this approach, a bonding layer of 150 nm thickness is easily achievable. We also report our results on the integration of waveguide-based GaSb p-i-n photodetectors coupled to SOI waveguide circuits using evanescent coupling, which show a responsivity higher than 0.4A/W. The design of active and passive structures and the overall fabrication process will also be discussed.

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“…This leads to a universal angular distribution of the flux at the surface. The appropriate average transmission coefficient in this case is of the form (5) so that the transmitted power per unit area is (6) Definition (5) is commonly used in the discussion of equilibrium blackbody radiation (see, e.g., [8] and Appendix I).…”

Section: Angular Average Of Power Transmissionmentioning

confidence: 99%

“…The refractive index of the interlayer is typically considerably lower than that of both semiconductors. It is usually expected that films with optical thickness smaller than the wavelength should not disturb the radiation transmission or waveguiding properties [6]. This is indeed true for interlayers of higher refractive index.…”

Section: Introductionmentioning

confidence: 98%

Optical Power Transmission Through Adhesive and Bonding Layers

Subashiev

Luryi

2009

J. Lightwave Technol.

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Abstract-In this paper, we analyze the optical power transmission in structures that include a low-index intermediate layer and sources with a wide angular distribution. Special attention is paid to the angular average of the transmission coefficient, which can be cast in a universal form for two practically relevant classes of source layers. Due to the so-called frustrated total internal reflection, the structure transparency is highly sensitive to the intermediate layer thickness and index contrast. We show that the transmission coefficient for isotropic radiation may remain low even for optically thin low-index intermediate layers, so that the usual comparison between the optical thickness and the wavelength is no longer a reliable criterion. Calculations are presented for exemplary structures, such as a semiconductor scintillator bonded to a photodiode. The angular dependence of the transmission coefficient is shown to satisfy a simple and universal sum rule.

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Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits

Cited by 86 publications

References 29 publications

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

Optical Power Transmission Through Adhesive and Bonding Layers

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