Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Petti, Luisa; Faber, Hendrik; Münzenrieder, Niko; Cantarella, Giuseppe; Patsalas, P.; Tröster, Gerhard; Anthopoulos, Thomas D.

doi:10.1063/1.4914085

Cited by 46 publications

(63 citation statements)

References 33 publications

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“…Due to their properties and their availability, polymers are the natural choice and the most commonly used substrate materials. Among the different polymers, polyimide (PI) foils with thicknesses (t S ) between 5 lm and 125 lm are the most frequently utilized substrates, 135,145,152,157,158,160,165,172,177,180,184,188,189 together with PI and nano silica. 142,144 This is because of the numerous advantages of PI (commercially known as Kapton V R ), like a small coefficient of thermal expansion (CTE) of 12 Â 10 À6 K, a small humidity expansion coefficient (HEC) (9 Â 10 À6 %RH), a high T G of %360 C, and a surface roughness in the nanometer range.…”

Section: Methodsmentioning

confidence: 99%

“…Finally, mechanically active multilayer substrates using a highly cross-linked hydrogel swelling layer and a stiff PI have been shown. Typical adhesion or buffer layers are made of silicon nitride (SiN x ), 92,106,113,114,140,[143][144][145][146]150,151,173,182,183 silicon oxide (SiO x ), 78,82,135,148,154,157,168,170,181,205 and photoresist sandwiched between SiN x and SiO x . 158 Organic materials, 78,82,136,148,154,157,168,170,181,205 in particular, SU8, 153 or PVP is especially well-suited as smoothing layers.…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, also other properties like adhesion or transparency need to be considered. These requirements resulted in the use of different metals: Al, 77,149,152,154,157,165,170,172,179,208 Au, 38,167 Cu, 147 Mo, 41,82,137,138,148,164,168 palladium (Pd), 145 and Ti, 90,93,144,169 whereas Mo and Ti seem to exhibit the lowest specific contact resistance R C . At the same time, a big variety of multi-layer contacts have been developed to combine the advantageous properties of different materials; recent examples are: Ti/ Au, 59,69,81,84,113,140,141,143,146,150,151,[181][182][183] Ni/Au, 79 Mo/ Al, 166,173 Cr/Au, 114 Mo/AlNd, 156 Cr/Au/Cr, 92 Mo/Al/Mo, 153 Ti/Au/Ti, …”

Section: à2mentioning

confidence: 99%

“…Up to now, free-standing flexible substrates have been widely employed. 93,96,134,145,154,156,157,165,172,178,180,184,188,189,209 Free-standing foils are a natural choice for the fabrication of flexible devices because they are compatible with large-scale substrates and future roll-to-roll processes. Furthermore, the mechanical robustness of free-standing foils results in an insensitivity against mechanical shocks.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

“…29,115 Alternatives to Ga doping in IZO have also been developed, using tin (Sn), hafnium (Hf), and zirconium (Zr 76 including neat layers, nanoparticle (NP), or nanowire (NW) films, as well as blends of In 2 O 3 and polyvinylpyrrolidon (PVP). 76,145,[190][191][192] 83 either in the form of neat IGZO or in blends of IGZO and graphene nanosheets. 83,200,201 B.…”

Section: à3mentioning

confidence: 99%

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Section: Methodsmentioning

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Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

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The growth mechanism of indium oxide (In 2 O 3 ) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline In 2 O 3 layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of In 2 O 3 are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized In 2 O 3 layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm 2 V −1 s −1 , a value amongst the highest reported to date for solution-processed In 2 O 3 TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

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Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

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Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light-emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution-processed thin film transistors, especially those deposited at low temperatures for next-generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state-of-the-art solution-processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed. a large common cathode (opaque metal). This means that the light emission goes through the backplane and the TFT arrays are able to block the light, resulting in the reduced emission fill factor of the display. This mode is also called bottom emission. One effective way to avoid the light obstruction from TFTs in the backplane is to use top-emitting OLEDs, which have a transparent cathode. [2] In 2004, Pennsylvania State University demonstrated the first flexible phosphorescent AMOLED display with hydrogenated amorphous silicon on a 4 in. polyimide (PI) substrate. [7] One year later, a 48 × 48 organic pentacene TFT-driven AMOLED display on a polyethylene terephthalate (PET) substrate was reported by the same group. [8] In 2005, by employing a top-emission structure, researchers at Sony Corp. demonstrated the first full-color imaging on a flexible AMOLED with a pixel resolution of 80 ppi. [9] In 2013, Samsung Electronics showed curved OLED TVs for the first time. Two years later, the same company unveiled a smartphone with a curved edge display (Galaxy S6 Edge), which used touch sensors to improve the user interface and device design. Most recently, LG Display succeeded in developing the world's first large-size 77 in. transparent and flexible OLED display, which could be rolled up to a radius of 80 mm. [10] The ideal flexible AMOLED backplane should be robust, rollable/bendable, capable of complementary metal oxide semiconductor (CMOS) operation, and should lend itself to low-cost manufacturing. To advance toward next-generation flexible AMOLED displays, two key technological goals should be satisfied during fabrication. One is to develop TFT backplanes with good uniformity, stability, and electrical performance. Amorphous silicon (a-Si) TFTs are well known for their uniform electrical characteristics (µ FE < 1 cm 2 V −1 s −1 and I on /I off > 10 6 ) and have achieved great success in flat-panel LCD displays. However, the relatively low µ FE and the lig...

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Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Cited by 46 publications

References 33 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

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Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Cited by 46 publications

References 33 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Contact Info

Product

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Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors