Low temperature spike anneal for Ni-silicide formation

Silicides and germanides for nano-CMOS applications

“…5 for the application to fully silicided gates (the same principle can be applied to any Ni-silicidation application) [4,5,13,[15][16][17]. In the two-step RTP process, a first RTP step (RTP1) is used to control the amount of Ni reacted.…”

Tuning nickel silicide properties using a lamp based RTA, a heat conduction based RTA or a furnace anneal

“…The temperature is controlled by thermocouples located near to the wafer. A description of the heater based tool can be found elsewhere [2].…”

“…For Nickel silicide it is known that already a single step RTA is able to get to the low resistivity Ni mono silicide phase (NiSi) [2]. Additionally the formation temperature of NiSi is lower compared to CoSi 2 which means that the overall thermal budget is smaller [1].…”

Advances in Selective Wet Etching for Nanoscale NiPt Salicide Fabrication

“…In NiPt silicide scaling, the process of using a lower temperature RTP 1 and a large amount of Pt additive is favorable in controlling nickel diffusion dynamically to form thinner silicide and to control the junction leakage and resistivity. [6][7][8][11][12][13][14][15][16] As Platinum is a noble metal and usually reacts only with aggressive acids, the conventional approach is to use the chlorine radical contained wet chemicals as etchant 17) in the process. But the chlorine radical will also attack other exposed metals or metal-rich silicide.…”