Tuning nickel silicide properties using a lamp based RTA, a heat conduction based RTA or a furnace anneal

Waidmann, S.; Kahlert, V.; Streck, C.; Press, P.; Kammler, Thorsten; Dittmar, Kornelia; Zienert, I.; Rinderknecht, J.

doi:10.1016/j.mee.2006.10.020

Cited by 11 publications

(16 citation statements)

References 4 publications

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“…The nickel silicide Hall bars received 60 nm of Ni with a 10-nm Ti capping layer to prevent oxidation [ 21 ]. The sample was then annealed to 350°C in N 2 for 30 min to yield the NiSi phase [ 15 ]. The unreacted nickel and titanium were removed with a sulphuric acid- hydrogen peroxide etch before Ti/Au (10/60 nm) bond pads were patterned.…”

Section: Methodsmentioning

confidence: 99%

“…In addition, the silicide has the attractive property that it can be formed at low-temperatures, with nickel rich phases (e.g. Ni 2 Si) forming at temperatures below 350°C [ 15 ]. This property is crucial for the fabrication of atomic-precision donor-based devices where the aim is to measure transport through atomically positioned single dopants [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

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Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

2011

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We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

2011

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“…Post-annealing process of the films was treated in an N 2 (80%) + H 2 (20%) ambient at a flow rate of 200 cm 3 /min in a temperature range from 400 to 1000°C for 60 min. It is worthy to note that both rapid thermal and furnace annealing are suitable processes for silicidation with similar results, while the latter is qualitatively better in terms of thermal budget [20].…”

Section: Methodsmentioning

confidence: 72%

Self-encapsulation of single-texture CoSi2 nanolayer by TaSi2

Akhavan¹,

Azimirad²,

Moshfegh³

2008

Thin Solid Films

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“…Ni is widely used for forming silicide due to its ease of availability and lower cost. Moreover, nickel silicide (NiSi) can be formed at temperatures starting from 250 1C to higher temperatures of 500 1C as reported [13][14][15][16]. Contact resistivity as low as 0.01 mO cm 2 is reported for metal-semiconductor contacts formed using NiSi [17].…”

Section: Introductionmentioning

confidence: 86%