Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors

Kim, Hyunsung; Kim, Myung‐Gil; Ha, Yushin; Kanatzidis, Mercouri G.; Marks, Tobin J.; Facchetti, Antonio

doi:10.1021/ja903886r

Cited by 65 publications

(47 citation statements)

References 36 publications

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“…According to the XPS analysis, 175 1C is a sufficient temperature for IO formation from The fabrication of low-temperature-processable oxide YH Hwang et al the aqueous precursor solution, whereas a much higher thermal energy is required for the 2-methoxyethanol-based solution. 27,28 The x-ray diffraction patterns of IO thin films, as shown in Figure 2d, verify the formation of the desired IO thin films, which were fabricated from the aqueous precursor solution. The prepared IO thin films remain in an amorphous phase until the temperature reaches 200 1C, and crystallization occurs above 200 1C.…”

Section: Resultsmentioning

confidence: 66%

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

et al. 2013

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Metal-oxide semiconductors have attracted considerable attention as next-generation circuitry for displays and energy devices because of their unique transparency and high performance. We propose a simple, novel and inexpensive 'aqueous route' for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, o200 1C). These results provide substantial progress toward solution-processed metal-oxide TFTs through naturally formed, unique indium complex and post annealing. The fabricated TFTs exhibited acceptable electrical performance with good large-area uniformity at low temperatures. Additional vacuum annealing facilitated the condensation reaction by effectively removing byproduct water molecules and resulted in the activation of the In 2 O 3 TFT at low annealing temperatures, even temperatures as low as 100 1C. In addition, we have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress. INTRODUCTIONMetal-oxide semiconductors (MOSs) are a unique class of materials that have both transparency and electronic conductivity. 1-3 Increasing demand for transparent semiconducting active materials has resulted in increased attention on the MOSs for next-generation electronics, including electronics for use in high-performance, flexible and transparent applications, because of their favorable field-effect mobility, high optical transparency and good environmental stability. 4,5 In the early studies, these materials were primarily prepared using a vacuum process. 6,7 Although the vacuum-based deposition method has advantages, the high fabrication cost and large-area device uniformity restrict its areas of application. We suggest a simple and novel 'aqueous route' for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, o200 1C). These results provide substantial progress toward solutionprocessed metal-oxide TFTs via a unique indium complex (IC) and post annealing. In addition, we have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress.The solution-based synthesis approach is considered a promising solution to the issues of fabrication cost and device uniformity. This

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Section: Resultsmentioning

confidence: 66%

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

et al. 2013

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“…For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology.…”

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confidence: 99%

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

et al. 2010

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The ever increasing demand for high performance electronic devices that can be fabricated onto large-area substrates employing low manufacturing cost techniques has given a boost to the development of alternative types of semiconductor materials, such as organics and metal oxides, with desirable physical characteristics that are absent in their traditional inorganic counterparts. Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] . Many of these materials have been investigated for applications in thin-film electronics where transistors with electron mobilities up to 140 cm 2 /Vs have been demonstrated [7,[11][12][13][14][15][16] . Despite the great promise however, the application of vacuum-based technologies for the deposition of complex oxide semiconductors suffers from incompatibility with large-area substrates and hence high manufacturing cost. To this end, the development of alternative deposition methods based on solution processing paradigms could provide a breakthrough in both cost and performance by marrying fabrication simplicity with high-throughput manufacturing.In recent years a wide variety of soluble precursors compounds have been examined as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology. Here we show how spray pyrolysis (SP) can be used for the deposition of doped ZnO films and the fabrication of high electron mobility TFTs onto large area substrates under ambient atmosphere. Doping is achieved by simple physical blending of the soluble precursor compounds in water or alcohol based solutions. Among the various dopants studied, transistors fabricated using Li doped ZnO were 3 found to yield the best performance with maximum electron mobility > 50 cm 2 /Vs and on/off current modulation ratio exceeding 10 6 .Preparation of the Li doped precursor solutions is described in th...

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“…To overcome these limitations, solution processes have been studied as alternative deposition methods. [2][3][4][5][6][7][8] Although solution processes have many advantages such as simplicity and low cost, they require a high annealing temperature (400 • C or more) to obtain better performance. This high annealing temperature makes deposition on commercial glass or inexpensive flexible substrates difficult.…”

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confidence: 99%

Low-Temperature Solution-Processed ZrO2 Gate Insulators for Thin-Film Transistors Using High-Pressure Annealing

Kim

Yoon

Rim

et al. 2011

Electrochem. Solid-State Lett.

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A solution-processed ZrO 2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO 2 film was formed at a low annealing temperature of 350 • C using HPA. This resulted in superior dielectric strength of the ZrO 2 films (about 10 −9 A/cm 2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO 2 gate insulator had a saturation mobility of 0.10 cm 2 /V · s and an on/off ratio of 1.17 × 10 4 .Since the introduction of thin-film transistors (TFTs) to large-area displays, TFT manufacturing technology has focused on improving performance and reducing cost to achieve commercialization. Transparent oxide TFTs have attracted a great deal of attention because their electrical characteristics are superior to those of hydrogenated amorphous Si TFTs, 1-8 the dominant technology over the past few decades. However, conventional deposition methods that involve vacuum processes, such as sputtering, chemical vapor deposition, pulse laser deposition, and atomic layer deposition, are expensive and have a restricted deposition area. To overcome these limitations, solution processes have been studied as alternative deposition methods. 2-8 Although solution processes have many advantages such as simplicity and low cost, they require a high annealing temperature (400 • C or more) to obtain better performance. This high annealing temperature makes deposition on commercial glass or inexpensive flexible substrates difficult.Many research groups have recently reported results involving lowtemperature solution-processed films, such as ZnO, 4 InSnO, 5 InZnO, 6 and InGaZnO. 7 However, these studies have focused only on active layers; vacuum processes are still used to fabricate gate insulators. Furthermore, solution-processed gate insulators require a high annealing temperature to obtain thin, dense films required for low leakage current density and high breakdown voltage. 3,8,9 In this study, we fabricated low-temperature solution-processed ZrO 2 gate insulators using high-pressure annealing (HPA) and investigated the effects of this method.ZrO 2 solution was synthesized by dissolving 0.2 M ZrCl 2 in 2-methoxyethanol (2ME) solvent and filtering it through a 0.2-μm microfilter. This solution was spin-coated at a speed of 3000 rpm for 30 s on a heavily arsenic (n + )-doped silicon wafer. The ZrO 2 film was pre-annealed at 300 • C for 5 min on a hot plate and then annealed at 350 • C for 30 min in ambient air with a high pressure of 10 atm using a HPA method. The spin-coating and annealing procedures were repeated five times. To confirm the effect of temperature and pressure, other samples were also fabricated by annealing at 500 • C or 350 • C without HPA.Solution-processed InZnO TFTs were fabricated using these ZrO 2 films as gate insulators. The 0.3 M InZnO solution prepared using In(NO 3 ) 3 · xH 2 O and Zn(CH 3 COO) 2 · 2H 2 O in 2ME with the stabilizers was also spin-coated on the ZrO 2 films and ann...

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Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors

Cited by 65 publications

References 36 publications

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

Low-Temperature Solution-Processed ZrO2 Gate Insulators for Thin-Film Transistors Using High-Pressure Annealing

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Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors

Cited by 65 publications

References 36 publications

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

Low-Temperature Solution-Processed ZrO2 Gate Insulators for Thin-Film Transistors Using High-Pressure Annealing

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Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs