Low-Temperature Sintering and Microwave Dielectric Properties of CaMoO4 Ceramics

Hu, Yongda; Bao, Shengxiang; Luo, Chuan; Ai, Libo; Jiang, Pengbo; Chen, Jie; Duan, Zongzhi

doi:10.1007/s11664-018-6807-3

Cited by 16 publications

(2 citation statements)

References 11 publications

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“…In the field of 5G communication and the Internet of Things, microwave dielectric ceramics with low dielectric constant are often used in microwave substrates, because according to Td = L ξ ߝ /c(where L is the distance travelled by the signal, and c is the speed of light), low dielectric constant can effectively reduce the time delay of high-frequency signals during transmission [1,2]. At the same time, LTCC technology, which requires sintering temperature below 950Ԩ, has been paid more attention in the research of microwave dielectric ceramics to follow the development trend of device miniaturization and integration [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Microwave dielectric properties of Na⁺-substituted CaMg_0.9Li_0.2Si₂O₆ ceramics

Huang

Tang

2022

MATEC Web Conf.

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Ceramics with low dielectric constant are widely used in high frequency substrates. The low temperature sintered CaMg0.9-xNa2xLi0.2Si2O6(x = 0–0.05 and 0.1) ceramics with low dielectric constant and dielectric loss were prepared by the traditional solid-state reaction method, with 0.5wt%LBSCA additive. The XRD patterns of the samples were obtained by X-ray diffraction and it was found that there were three ceramic components, CaMgSi2O6, CaSiO3 and Na2MgSiO4, which indicated that the experimental sample was a multiphase ceramic system. Through the trend of bulk density as functions of the content of substitution and the change of SEM morphology, it could be found that appropriate amount of Na+ substitution can promote the grain growing and the densification of ceramics. Results demonstrated that both the Q × f and εr were relevant to bulk density and the second phase. The τf was also affected by the second phase to some extent. In particular, the ceramics sintered at 925 °C for 3h possessed the desirable microwave dielectric properties for LTCC application: εr = 7.03, Q × f = 17,956 GHz, and τf= −79 ppm/°C.

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Section: Introductionmentioning

confidence: 99%

Microwave dielectric properties of Na⁺-substituted CaMg_0.9Li_0.2Si₂O₆ ceramics

Huang

Tang

2022

MATEC Web Conf.

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“…Alkaline molybdate materials (AMoO 4 ) are earth-abundant minerals where the MoO 4 2– tetrahedron has relatively inclined diversity and polyhedral distortion, which are responsible for its excellent physical properties. − Generally, AMoO 4 materials have high resistance and high permittivity, which make them an important kind of dielectric materials. − Strontium molybdate (SrMoO 4 ) is a scheelite compound with low cost and ease of synthesis, better thermal stability, good Raman gain coefficient, and mechanical properties. − In addition, the low sintering temperature and outstanding dielectric properties of SrMoO 4 is responsible for its excellent low temperature cofired ceramic…”

Section: Introductionmentioning

confidence: 99%

Effect of High Pressure on the Dielectric Properties of SrMoO₄

et al. 2020

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In situ impedance measurement and first-principles calculations have been performed to investigate the effect of high pressure (up to 35.5 GPa) on the dielectric properties of SrMoO4. It is found that the carrier transport process is dominated by the grains, and the variation in resistance under compression is related to the change in activation energy. The relative permittivity of the tetragonal phase of SrMoO4 is stable below 7.0 GPa and has stable electrical storage capacity as well. However, the electron localization around O atoms in the monoclinic phase is enhanced with the increase in pressure, resulting in a decreased relative permittivity. A typical dielectric loss by electronic conduction of SrMoO4 is also presented. After unloading pressure, the dielectric loss of the low-frequency region is significantly reduced. Besides, the dielectric performance of SrMoO4 is effectively optimized by pressure. This study will provide a theoretical and experimental basis for the design and modification of other related ABO4-type materials for dielectric devices.

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