Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

Glesková, Helena; Wagner, S.; Gasparik, V.; Kováč, P.

doi:10.1016/s0169-4332(01)00050-2

Cited by 55 publications

(37 citation statements)

References 15 publications

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“…Interestingly, this effect is nearly identical to that observed with the refractive index variations [10]. A similar complexity has been experimentally observed [7]. In Fig.…”

Section: 23supporting

confidence: 87%

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Use of a neural network to characterize the charge density of PECVD-silicon nitride films

Kim

Kwon

2007

Met. Mater. Int.

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Silicon nitride (SiN) films were deposited using a plasma-enhanced chemical vapor deposition system (PECVD). The charge density of the SiN films was modeled using a generalized regression neural network (GRNN). The PECVD process was characterized by means of a face-centered Box Wilson experiment. The prediction performance of the GRNN model was optimized using a genetic algorithm (GA). The GA-GRNN model significantly improved the GRNN prediction performance by more than 55 %. The optimized GA-GRNN model was used to investigate the effects of various parameters on the charge density. A higher charge density was obtained at higher temperatures (i.e. a lower H concentration). Increasing the pressure increased the charge density at all temperatures levels with a much stronger impact at a lower H concentration. The effects of the SiH4 and N2 (or NH3) flow rates on the charge density were similar in that a higher charge density was achieved at a lower Si-N ratio (N-rich films). A considerable increase in the charge density with a radio frequency power at a lower NH3 flow rate was attributed to the generation of more Si-H than N-H bonds.

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“…Interestingly, this effect is nearly identical to that observed with the refractive index variations [10]. A similar complexity has been experimentally observed [7]. In Fig.…”

Section: 23supporting

confidence: 87%

“…Apart from the SiN films, plasma-driven processes are widely used to deposit or etch a variety of films [4][5][6]. Additives such as H 2 or N 2 have been included in SiH 4 -NH 3 plasma [7,8]. For SiH 4 -N 2 plasma, Ar or He is included [9].…”

Section: Introductionmentioning

confidence: 99%

Use of a neural network to characterize the charge density of PECVD-silicon nitride films

Kim

Kwon

2007

Met. Mater. Int.

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“…However, high-quality gate dielectric layers have been obtained at 150 C (Gleskova et al 2001), and TFTs fabricated on a polyimide substrate using this process show the same performance characteristics as TFTs conventionally fabricated on glass (Forbes et al 2002). A temperature of 150 C is a reasonable temperature for heat-stabilized PEN, and the feasibility of this process on PEN has been demonstrated with the device in Plate 15.3.…”

Section: Tft Requirementsmentioning

confidence: 91%

OLED Displays on Plastic

Hildner

2005

Flexible Flat Panel Displays

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“…Its principal application is as the gate dielectric for amorphous Si TFTs that switch pixels in large area, liquid crystal, flat panel displays used in laptop computers and TVs. SiN x :H with low leakage current and high breakdown voltage can be grown at 150 C by RF PECVD [56]. It is noteworthy that this SiN x :H contains a significant concentration of hydrogen, $30 at%, ($2 Â 10 22 H atoms cm À3 ).…”

Section: Zno Thin Film Transistors On Sinx:h/si Grown By Plasma-enhanmentioning

confidence: 99%

Application of Transparent Oxide Semiconductors for Flexible Electronics

Carcia

2010

Transparent Electronics

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Electronics on flexible plastic substrates [1,2] are attractive for portable applications, because plastic is lighter weight, thinner, bendable, and more rugged than glass. Flexible plastic substrates can also be processed reel-to-reel, which should reduce manufacturing cost. Some applications envisioned for flexible electronics include (rollable) displays [3], low cost radio frequency identification (RFID) tags [4], and large area or macroelectronics [5], in general.Plastic substrates, however, are temperature sensitive. Common, inexpensive, plastic substrates, such as poly(ethylene terephthalate) (e.g. PET-Mylar Ò ), can withstand processing only up to $100 C, while poly(ethylene naphthalate) (PEN), in the same polyester family, can be used up to $200 C. (More detail about plastic substrates will be given later in this chapter). However, low mobility ($1 cm 2 V À1 s À1 ), amorphous silicon (a-Si) device technology [6,7], used in liquid crystal displays (LCDs) [8] for laptop computers and large screen flat-panel TVs, requires processing up to 350 C. Moreover, higher performance electronics, based on high mobility ($100 cm 2 V À1 s À1 ) polycrystalline Si technology [6,9], which drives newer organic light emitting displays (OLEDs) [10], require still higher process temperatures, $600 C. (A high mobility translates into a higher output current, and lower voltage and higher frequency operation). However, post-annealing processes used in Transparent Electronics: From Synthesis to Applications Edited by Antonio Facchetti and Tobin J. Marks

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Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates

Cited by 55 publications

References 15 publications

Use of a neural network to characterize the charge density of PECVD-silicon nitride films

Use of a neural network to characterize the charge density of PECVD-silicon nitride films

OLED Displays on Plastic

Application of Transparent Oxide Semiconductors for Flexible Electronics

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