Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition

Abstract

Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent J. Appl. Phys. 98, 073708 (2005); 10.1063/1.2061891Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions J.

A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchange

“…Thus, the s AlO X ;Si is assumed to be only half of s Al;Si . 2 The resulting Gibbs energy DG is plotted in Fig. 3 as a function of the tilt angles a and the cluster size i.…”

“…Formation of a polySi seed layer and subsequent epitaxial thickening at low temperatures is an interesting approach for the formation of solar cells [1]. Low-temperature epitaxy is facilitated by (1 0 0) crystal orientation [2,3]. The aluminum-induced layer exchange (ALILE) process allows the formation of suitable seed layers for low-temperature epitaxy.…”

Photovoltaic Technology: The Case for Thin-Film Solar Cells

“…The first scheme consists of forming the solar cell within a high-quality epitaxial layer grown on top of a silicon wafer. Although high efficiencies (Ͼ19%) (11)(12)(13) and high deposition rates (0.5 m/min) for epitaxial growth at temperatures of ϳ500°to 600°C (14) have been demonstrated with laboratory methods, the transfer of these techniques to economically viable schemes [for example, multiple reutilization of the original silicon wafer or, alternatively, growth of an epitaxial layer on top of a laser-crystallized hydrogenated amorphous silicon (a-Si:H) layer on glass] has resulted in cell efficiencies that are only ϳ10 to 12% (15, 16). 2 The second scheme is based on the deposition of a doped amorphous silicon layer on the crystalline wafer to form a heterojunction (17 ).…”

Large-grained polycrystalline silicon on glass for thin-film solar cells

“…It has been demonstrated that techniques like electron cyclotron resonance chemical vapour deposition (ECRCVD) [11] or ion assisted deposition (IAD) [12] make low-temperature Si epitaxy possible. However, the quality of the grown films has to be improved.…”