Low temperature semi-quantitative analysis of local electrical field in silicon diode by transmission electron microscopy

Cabanel, C.; Brouri, Dalil; Laval, J. Y.

doi:10.1051/epjap:2006042

Cited by 1 publication

(4 citation statements)

References 23 publications

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“…In contrast, for PCMO–STNO we obtain FWHM ≈ 50 nm which corresponds to the width of profiles taken at thicknesses just above

t_{th}^{(PS)} \approx 80 nm .

A slight increase of the acceleration voltage to e.g. 15 kV and a smaller beam diameter reduce the FWHM to 10 nm for PCMO, which matches the resolution obtained in STEBIC experiments at 200 kV .…”

Section: Resultssupporting

confidence: 75%

“…3(b) at different thicknesses indicated in the legend). This behaviour is expected from our simulations as the integral of the generation volume decreases with decreasing lamella thickness and is consistent with results obtained at 200 kV STEBIC experiments [6]. Data obtained for the Si p-n junction show a qualitatively similar EBIC signal decrease with decreasing thickness (compare Fig.…”

supporting

confidence: 92%

“…t ª A slight increase of the acceleration voltage to e.g. 15 kV and a smaller beam diameter reduce the FWHM to 10 nm for PCMO, which matches the resolution obtained in STEBIC experiments at 200 kV [6].…”

supporting

confidence: 76%

“…There have been several attempts to improve EBIC resolution into the nanometer range by using very low beam voltages or by measuring EBIC in a transmission electron microscope (TEM) at high acceleration voltage (scanning transmission EBIC, STEBIC). In particular, Cabanel et al have measured STEBIC at 200 kV obtaining a resolution of about 10 nm . They used a wedge‐shaped Si junction sample and measured near the space charge region down to a thickness of t = 100 nm, where carrier diffusion and beam broadening do not limit the spatial resolution.…”

Section: Introductionmentioning

confidence: 99%

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Low energy scanning transmission electron beam induced current for nanoscale characterization of p–n junctions

Peretzki

Ifland

Jooß

et al. 2016

Physica Rapid Research Ltrs

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Electron beam induced current (EBIC) at p–n junctions can be measured in high spatial resolution using a thin lamella geometry, where most incident electrons transmit the sample. We explore the case of low excitation energies in a wedge‐shaped lamella geometry to increase resolution in a controlled way. We compare a sample with high (Si) and low (manganite‐titanate heterojunction) diffusion length and use Monte Carlo based simulations as a reference. It is shown that the EBIC signal obtained from the Si junction vanishes below a thickness of 300 nm, whereas this happens at 80 nm in the PCMO–STNO junction. This allows for achieving an EBIC resolution of better than 50 nm for the latter system. The observed fundamental differences between the silicon and the perovskite junction are discussed in terms of preparation induced ‘dead’ layers and surface recombination.

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“…In contrast, for PCMO–STNO we obtain FWHM ≈ 50 nm which corresponds to the width of profiles taken at thicknesses just above