Low-temperature selective epitaxial growth of silicon at atmospheric pressure

Sedgwick, T. O.; Berkenblit, M.; Kuan, T. S.

doi:10.1063/1.101036

Cited by 97 publications

(38 citation statements)

References 11 publications

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“…Improvements in the quality of gases and equipment have enabled ultraclean low-temperature CVD processing for atomic-order control. [1][2][3][4] Our concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control by CVD. CVD is one of the film formation methods using chemical reactions on a substrate with reactant source gas and offers many advantages, such as high throughput, in-situ doping, conformal deposition, and selective deposition.…”

Section: Introductionmentioning

confidence: 99%

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Murota

Sakuraba

Tillack

2006

jjap

112

153

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One of the main requirements for Si-based ultrasmall devices is atomic-order control of process technology. Here we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control. By ultraclean low-pressure chemical vapor deposition using SiH 4 and GeH 4 gases, high-quality low-temperature epitaxial growth of Si, Ge, and Si 1Àx Ge x with atomically flat surfaces and interfaces on Si (100) is achieved, and atomic-order surface reaction processes on group IV semiconductor surface are formulated based on a Langmuir-type surface adsorption and reaction scheme. In in-situ doped Si 1Àx Ge x epitaxial growth on the (100) surface in a SiH 4 -GeH 4 -dopant (PH 3 , or B 2 H 6 or SiH 3 CH 3 )-H 2 gas mixture, the deposition rate, the Ge fraction and the dopant concentration are explained quantitatively assuming that the reactant gas adsorption/reaction depends on the surface site material and that the dopant incorporation in the grown film is determined by Henry's law. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge (100) is generalized based on the Langmuir-type model. Si or SiGe epitaxial growth over N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, the capability of atomically controlled processing for advanced devices is demonstrated. These results open the way to atomically controlled technology for ultralarge-scale integrations.

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Section: Introductionmentioning

confidence: 99%

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Murota

Sakuraba

Tillack

2006

jjap

112

153

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“…An ultraclean system equipped with load-lock and hydrogen purifier was used by T. 0. Sedgweck et al [3] to selectively deposit epitaxial silicon using DCS/Hz at atmospheric pressure. J. L. Regolini et al [4] have demonstrated that the selective epitaxial growth of silicon can be achieved at reduced pressure of 2 ton…”

Section: Introductionmentioning

confidence: 99%

Low pressure silicon selective epitaxial growth and its thermodynamic considerations

Armstrong

Gamble

1993

J. Phys. IV France

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Abstract-In a rapid thermal processing reactor QUPLAS 11, full selective epitaxial growth of silicon has been obtained using DCS in Hz without addition of HCl. This is mainly achieved by reducing total process pressure down to the millibar regime. Selectivity can also be controlled by reducing DCS gas flow rate; however, the growth rate is greatly reduced. Process temperature has, on the other hand, a minor effect on selectivity control. The selective epitaxial growth (SEG) occurs under conditions of near thermodynamic equilibrium. Thus equilibrium partial pressures of the predominant species in the Si-H-C1 system have been calculated to give an insight into the experimental results. The availability of HC1 species relative to silicon containing species in the gas phase, P,,,/Psi, has shown why no external HC1 is required, for depositions in millibar regime or low DCS flow rate, to obtain full selectivity. While reaction system is near-equilibrium, the reposition of C1, dissociated from Si containing species, into HC1 species, plays an important role in determining the system etching function.

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“…The four net reactions are part of a growth-etch model characterizing the nature of the Si surface and oxide under various processing conditions. Several low-temperature epitaxial growth techniques, such as UHV/CVD (17) and atmospheric pressure chemical vapor deposition (26) have been successfully demonstrated based on operation in a region of the growth-etch model that allows for an oxide-free surface. The most important factor is the reduction of O2 and H20 partial pressures.…”

Section: In Situ Cleaningmentioning

confidence: 99%

“…Low-temperature CVD techniques such as ultrahigh vacuum CVD (UHV/ CVD) (17), plasma-enhanced CVD (PECVD) (18)(19)(20)(21)(22), remote plasma CVD (RPCVD) (23)(24), and photo-induced epitaxy (25) have also been studied. Recently, Sedgwick et al have lowered epitaxial growth temperatures down to 600~ at atmospheric pressure by using purified hydrogen (26).…”

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confidence: 99%

Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD)—A Review

Hsieh

Jung

Kwong

et al. 1991

J. Electrochem. Soc.

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Rapid thermal processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce-many of the processing problems associated with thermal exposure in conventional chemical vapor deposition, while still retaining the ability to grow high-quality epitaxial layers. In this paper, silicon homoepitaxy growth by RTPCVD is studied extensively and comprehensively. The principles of the RTPCVD system are described, followed by results of experiments on in situ cleaning, undoped Si epitaxy on Si and silicon-on-insulator substrates, in situ doped Si epitaxy, and selective epitaxial growth of Si using oxide masks and oxide on polycrystalline Si on oxide masks. Selective growth was achieved without the use of HC1. Our results show that RTPCVD is capable of growing high-quality, epitaxial Si layers with sharp dopant transition profiles. A brief discussion of fabricated devices is included.As individual semiconductor device dimensions continue .to shrink, stringent control of the vertical profiles of layers and dopants on an atomic scale without sacrificing control of microscopic lateral dimensions over large areas is required. Therefore, the ability to process layers of heterogeneous materials (metals, insulators, and semiconductors) without destroying previously fabricated structures is of paramount importance for advances in planar integration and may eventually make possible the development of true three-dimensional integration.

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Low-temperature selective epitaxial growth of silicon at atmospheric pressure

Cited by 97 publications

References 11 publications

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Low pressure silicon selective epitaxial growth and its thermodynamic considerations

Silicon Homoepitaxy by Rapid Thermal Processing Chemical Vapor Deposition (RTPCVD)—A Review

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