Low-temperature production of silicon carbide films of different polytypes

Role of polytypism and degree of hexagonality on the photoinduced optical second harmonic generation in SiC nanocrystalline films

“…The obtained films contain 4 80 at% of nanocrystalline silicon carbide, with nanoparticles linked by the regions containing silicon and carbon, as well as oxygen admixtures (1-3 at%). The polytype structure, the size of SiC NC and the composition of the boundary regions in the films depend on the substrate temperature and the deposited ion energy [21,22]. Advantage of direct ion deposition is the possibility of formation of nanocrystals of different polytypes, including rhombohedral 15R, 21R, 24R, 33R, 27R which is not available to the traditional methods of preparation of nanocrystalline SiC films.…”

“…The detailed conditions of the nanocrystalline film preparation by the method of direct ion deposition are described in the references [21,22]. The obtained films contain 4 80 at% of nanocrystalline silicon carbide, with nanoparticles linked by the regions containing silicon and carbon, as well as oxygen admixtures (1-3 at%).…”

The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

“…This may occur because of the disintegration of silicon carbide and desorption of carbon from the layer at temperatures above 950° (see section 3.1). The decrease in phase volume of nanocrystalline SiC at temperatures above 1200ºC can also occur due to evaporation of silicon in a vacuum, the melting point (1423ºC) of which is less than the sublimation temperature of carbon (Semenov et al, 2009). Si (111) Si (220) SiС (111) SiС (200) SiС (220) SiС ( An absence of SiC crystallites and the corresponding X-ray lines at high annealing temperatures 900-1100°C indicates a low ability of atoms to diffusion in the layer SiC 1.4 .…”

“…Such conditions were realized in the magnetron sputtering (Kerdiles et al, 2000;Sun et al, 1998), laser ablation (Spillman et al, 2000) and plasma deposition (Liao et al, 2005), plasma-enhanced chemical vapor deposition (George et al, 2002;Pajagopalan et al, 2005), molecular beam epitaxy (Fissel et al, 2000). At temperatures below 1500°C in the direct deposition of carbon and silicon ions with an energy of ~100 eV, the growth of nanocrystalline films with a consistent set of the polytypes 3C, 21R, 27R, 51R, 6H is possible (Semenov et al, 2008(Semenov et al, , 2009(Semenov et al, , 2010. Photoluminescence spectrum from the front surface of the nanocrystalline film www.intechopen.com Silicon Carbide -Materials, Processing and Applications in Electronic Devices 70 containing cubic 3C and rhombohedral 21R, has a band emission with three peaks at 2.65, 2.83, 2.997 eV (469, 439, 415 nm), the shoulder of 2.43 eV (511 nm) and a weak peak at 3.366 eV (369 nm) (Semenov et al, 2010).…”

Ion Synthesis of SiC and Its Instability at High Temperatures

“…Such conditions were realized in the magnetron sputtering [25,56], laser ablation [53] and plasma deposition [36], plasma-enhanced chemical vapor deposition [19,43], molecular beam epitaxy [16]. At temperatures below 1500°C in the direct deposition of carbon and silicon ions with energy of ~100 eV, the growth of nanocrystalline films with a consistent set of the polytypes 3C, 21R, 27R, 51R, 6H is possible [49,50,51].…”